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Rochester Electronics LLC MTA15N06 N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MTA15N06	Bulk	33,266		579	1 - 10 - 100 - 1000 $0.52 10000 $0.52	Buy Now
Micro Commercial Components MCAC2D5N065Y-TP MOSFET N-CH 65 160A DFN5060
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCAC2D5N065Y-TP	Reel	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.8625	Buy Now
	MCAC2D5N065Y-TP	Digi-Reel	5,000		1	1 $2.87 10 $1.858 100 $1.2808 1000 $0.95462 10000 $0.88792	Buy Now
	MCAC2D5N065Y-TP	Cut Tape	5,000		1	1 $2.87 10 $1.858 100 $1.2808 1000 $0.95462 10000 $0.88792	Buy Now
Micro Commercial Components MCT05N06-TP N-CHANNEL MOSFET,SOT-223
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCT05N06-TP	Cut Tape	4,548		1	1 $1.4 10 $0.885 100 $0.5865 1000 $0.41737 10000 $0.41737	Buy Now
	MCT05N06-TP	Digi-Reel	4,548		1	1 $1.4 10 $0.885 100 $0.5865 1000 $0.41737 10000 $0.41737	Buy Now
Rochester Electronics LLC RF1S45N06LE 45A, 60V, 0.028OHM, N-CHANNEL,
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RF1S45N06LE	Bulk	1,530		310	1 - 10 - 100 - 1000 $0.97 10000 $0.97	Buy Now
Goford Semiconductor G075N06MI N60V, 110A,RD<7M@10V,VTH1.0V~4.0
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	G075N06MI	Digi-Reel	747		1	1 $2 10 $1.276 100 $0.8619 1000 $0.68452 10000 $0.68452	Buy Now
	G075N06MI	Cut Tape	747		1	1 $2 10 $1.276 100 $0.8619 1000 $0.68452 10000 $0.68452	Buy Now

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5N06 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
5n06 Abstract: 5n06l RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 N06L 215e3 Text: 5N06LE, 5N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs [ /Title RFD1 5N06L E, RFD15 N06LE SM /Subject (15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil	Original	RFD15N06LE, RFD15N06LESM 5N06L RFD15 N06LE 5n06 5n06l RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 N06L 215e3	PDF
5n06 Abstract: F1S25N06 302 s1b diode Text: 5N06, 5N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs [ /Title RFP2 5N06, RF1S2 5N06S M /Subject (25A, 60V, 0.047 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB	Original	RFP25N06, RF1S25N06SM 5N06S O220AB O263AB 5n06 F1S25N06 302 s1b diode	PDF
5n06v Abstract: 5n06 TMOS E-FET AG3B CASE369A Text: MOTOROLA ‘ SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet \.:,$\:, >,* J,J, >, TMOS V ‘M Power Field Effect Transistor DPAK For Surface Mount w . .,. “7 $z,a<e~ .,Y ‘.’.$;$,:X ,., ,~, N-Channel Enhancement Mode Silicon Gate ~~d*:bOWER	Original	5N06V/curves 5n06v 5n06 TMOS E-FET AG3B CASE369A	PDF
5n06 Abstract: 5N05 S-6059 SGSP351 DIODE c335 17611 SEFP5N05 17610 SEFP5N06 Text: S G S-THOHSON D7E » \| 7la-H37 0018113 0 II 73C 1 7 6 1 0 D r - 3 ? -tr : I: I, SEFP5N05 5N06 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS V DSS T h e se p ro d ucts are diffused multi-cell silicon gate N -C h a n n e l e n ha ncem e nt m ode P o w e r-M o s field	OCR Scan	SEFP5N05 SEFP5N06 0V/60V 20Kfl) 300/is, SGSP351 100/is s-6059 C-335 5n06 5N05 DIODE c335 17611 17610 SEFP5N06	PDF
IRFD1Z3 equivalent Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not	OCR Scan	VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit	PDF
TP50N Abstract: MPT8N10 Text: <8> MOTOROLA M C33091A High-Side TMOS Driver The MC33091A is a High-Side TMOS Driver designed for use in harsh automotive switching applications requiring the capability of handling high voltages attributed to load and field dump transients, as well as reverse and	OCR Scan	C33091A MC33091A MC33091A, MC33091A TP50N MPT8N10	PDF
5N05 Abstract: 5n06 mtp5n05 Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTP5N05 5N06 Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TM OS T M O S P O W E R FETs 5 AM PERES T h e s e T M O S P o w e r FETs a re d e s ig n e d f o r h ig h s p e e d p o w e r	OCR Scan	MTP5N05 5N05 5n06	PDF
LTRG Abstract: P15N06 RFP15N05 15N06 5N06 RFP15N06 FM15N06 Text: cu R FM 15N 05/15N 06 R FP15N 05/15N 06 HARRIS N-Channel Enhancement Mode Power Field Effect Transistors M ay 1992 Packages Features TO -20 4 A A BOTTOM VIEW • 15A , 5 0 V and 6 0V • rD S o n = 0 .1 4 f l SOURCE y • S O A is P o w e r -D is s ip a tio n L im ite d	OCR Scan	05/15N FP15N 32e-8 0e-10 68e-8 LTRG P15N06 RFP15N05 15N06 5N06 RFP15N06 FM15N06	PDF
5N06 Abstract: No abstract text available Text: 3QE D • T TS ^S B? S G S - T H O M ^ 7 # 005^07= 3 ■ ^ S O N M T P 1 5 N 0 5 L /F I ^ O g œ iltL tK g T O K Ü D g i M T P 1 5 N 0 6 L /F I s: G _s-THOMSON N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE MTP15N05L	OCR Scan	TP15N05L TP15N05LFI TP15N06L TP15N06LFI 500ms 5N06	PDF
5N05 Abstract: 5n06 MTP5N05 MTP5N06 MTP4N08 MTP4N10 5n0506 Text: <8> MTP4N08, MTP5N05 MTP4N10, 5N06 MOTOROLA D e s i g n e r ’s D a t a S h e e t 4.0 and 5.0 AMPERE N-CHANNEL TMOS POWER FET N -C H A N N E L ENHANCEM ENT M ODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTO R rDS on = 0-8 OHM 80 and 100 VOLTS These TMOS Power FETs are designed for low voltage, high	OCR Scan	MTP4N08, MTP5N05 MTP4N10, MTP5N06 5N05 5n06 MTP5N06 MTP4N08 MTP4N10 5n0506	PDF
5n06 Abstract: MTD5N05-1 369A MTD5N06 Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD5N05 5N06 P o w e r Field E ffe c t T ra n sisto rs N -C h ann el E n hancem ent M o d e S ilic o n G ate T M O S D P A K fo r Su rfac e M o u n t or Insertion M ount TM O S POWER FETs 5 AMPERES	OCR Scan	MTD5N05-1, MTD5N06-1 69A-04 MTD5N05, MTD5N06 5n06 MTD5N05-1 369A MTD5N06	PDF
5N10E Abstract: 5n05e 5N06E 5n06 SISCO transistor 1183 4n60e 14n24 5p06 6N25D Text: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Small-Signal Transistor Dice Die type Recommended bond wire diam eter' nm Die topology Page -0 .8 .-2 .0 -0 .8 .-2 .0 SISC0.5P05E SISC3.2P05E 22 22 LA LC 1183 1183 - 1 .0 .-2 .0 SISC0.5P06E 22 LA 1183	OCR Scan	5P05E 2P05E 5P06E 2P10E 2P20E 4P24E 2N05E 5N05E 5N06E 5N65E 5N10E 5n06 SISCO transistor 1183 4n60e 14n24 5p06 6N25D	PDF
5n06 Abstract: diode c335 5N05 SEFP5N05 SEFP5N06 Text: S G S-THOHSON D7E » \| 7la-H37 0018113 0 II 73C 1 7 6 1 0 D I: I, N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors. ^stg Ti	OCR Scan	7la-H37 SEFP5N05 SEFP5N06 0V/60V C-335 5n06 diode c335 5N05 SEFP5N06	PDF
5n06 Abstract: w75n06 75n06 Text: SGS-THOMSON 75N 06/fi S T W 7 5 N 06 sth N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V S TH 75N 06 5N06FI S TH 75N 06 • • . ■ ■ . ■ ■ dss 60 V 60 V 60 V R DS on Id < 0 .0 1 4 ß < 0 .0 1 4 ß < 0 .0 1 4 ß 75 A 48 A 75 A T Y P IC A L RDS(on) = 0.011 Q	OCR Scan	06/fi STH75N06FI O-247 O-218 5n06 w75n06 75n06	PDF