5N06 Search Results

5N06 Result Highlights (6)

Part	Manufacturer	Description
NP45N06VUK-E1-AY	Renesas Electronics Corporation	Nch Single Power MOSFET 60V 45A 9.6mohm MP-25ZP/TO-263 Automotive
NP45N06VUK-E2-AY	Renesas Electronics Corporation	Nch Single Power MOSFET 60V 45A 9.6mohm MP-25ZP/TO-263 Automotive
NP45N06PUK-E2-AY	Renesas Electronics Corporation	Nch Single Power MOSFET 60V 45A 9.6mohm MP-3ZP/TO-252 Automotive
NP45N06PUK-E1-AY	Renesas Electronics Corporation	Nch Single Power MOSFET 60V 45A 9.6mohm MP-3ZP/TO-252 Automotive
NP45N06VDK-E1-AY	Renesas Electronics Corporation	60 V - 45 A - N-channel Power MOS FET, MP-3ZP, /Embossed Tape
G825N06211DEU	Amphenol Communications Solutions	Pin Header 2.0mm Pitch Rightangle Surfacemount, 1x6Pin, FULL G/F, LCP, 3.2mm2.0mm2.8mm, T&R, W/CAP

5N06 Price and Stock

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Goford Semiconductor GT025N06AM MOSFET N-CH 60V 170A TO-263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT025N06AM	Reel	8,000		1,600	1 - 10 - 100 - 1000 - 10000 $0.7625	Buy Now
	GT025N06AM	Cut Tape	783		1	1 $1.7 10 $1.414 100 $1.1257 1000 $1.1257 10000 $1.1257	Buy Now
Infineon Technologies AG IAUC90N10S5N062ATMA1 MOSFET N-CH 100V 90A TDSON-8-34
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IAUC90N10S5N062ATMA1	Reel	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.89773	Buy Now
	IAUC90N10S5N062ATMA1	Cut Tape	2,592		1	1 $2.14 10 $1.777 100 $1.4145 1000 $1.01551 10000 $0.96473	Buy Now
Renesas Electronics Corporation NP45N06VDK-E1-AY MOSFET N-CH 60V 45A TO252
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NP45N06VDK-E1-AY	Cut Tape	4,930		1	1 $1.48 10 $1.208 100 $0.9396 1000 $0.64877 10000 $0.64877	Buy Now
	NP45N06VDK-E1-AY	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.58166	Buy Now
Avnet Americas	NP45N06VDK-E1-AY	Reel		18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.61577	Buy Now
Renesas Electronics America	NP45N06VDK-E1-AY	Tape & Reel (TR)	7,430		1	1 $1.48 10 $1.208 100 $0.9396 1000 $0.64877 10000 $0.58166	Buy Now
onsemi NTMYS025N06CLTWG MOSFET N-CH 60V 8.5A/21A 4LFPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTMYS025N06CLTWG	Cut Tape	2,998		1	1 $1.7 10 $1.413 100 $1.125 1000 $0.80768 10000 $0.80768	Buy Now
Avnet Americas	NTMYS025N06CLTWG	Reel		14 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.82253	Buy Now
Richardson RFPD	NTMYS025N06CLTWG				3,000	1 - 10 - 100 - 1000 - 10000 $0.71	Buy Now
Flip Electronics	NTMYS025N06CLTWG		6,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi NVMYS025N06CLTWG MOSFET N-CH 60V 8.5A/21A 4LFPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NVMYS025N06CLTWG	Cut Tape	2,690		1	1 $0.9 10 $0.781 100 $0.5409 1000 $0.38461 10000 $0.38461	Buy Now
Avnet Americas	NVMYS025N06CLTWG	Reel		14 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.34272	Buy Now
Avnet Asia	NVMYS025N06CLTWG			14 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.30513	Buy Now
Flip Electronics	NVMYS025N06CLTWG		15,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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5N06 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
5n06 Abstract: 5n06l RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 N06L 215e3 Text: 5N06LE, 5N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs [ /Title RFD1 5N06L E, RFD15 N06LE SM /Subject (15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil	Original	PDF	RFD15N06LE, RFD15N06LESM 5N06L RFD15 N06LE 5n06 5n06l RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 N06L 215e3
5n06 Abstract: F1S25N06 302 s1b diode Text: 5N06, 5N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs [ /Title RFP2 5N06, RF1S2 5N06S M /Subject (25A, 60V, 0.047 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB	Original	PDF	RFP25N06, RF1S25N06SM 5N06S O220AB O263AB 5n06 F1S25N06 302 s1b diode
5n06v Abstract: 5n06 TMOS E-FET AG3B CASE369A Text: MOTOROLA ‘ SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet \.:,$\:, >,* J,J, >, TMOS V ‘M Power Field Effect Transistor DPAK For Surface Mount w . .,. “7 $z,a<e~ .,Y ‘.’.$;$,:X ,., ,~, N-Channel Enhancement Mode Silicon Gate ~~d*:bOWER	Original	PDF	5N06V/curves 5n06v 5n06 TMOS E-FET AG3B CASE369A
5n06 Abstract: 5N05 S-6059 SGSP351 DIODE c335 17611 SEFP5N05 17610 SEFP5N06 Text: S G S-THOHSON D7E » \| 7la-H37 0018113 0 II 73C 1 7 6 1 0 D r - 3 ? -tr : I: I, SEFP5N05 5N06 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS V DSS T h e se p ro d ucts are diffused multi-cell silicon gate N -C h a n n e l e n ha ncem e nt m ode P o w e r-M o s field	OCR Scan	PDF	SEFP5N05 SEFP5N06 0V/60V 20Kfl) 300/is, SGSP351 100/is s-6059 C-335 5n06 5N05 DIODE c335 17611 17610 SEFP5N06
IRFD1Z3 equivalent Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not	OCR Scan	PDF	VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
TP50N Abstract: MPT8N10 Text: <8> MOTOROLA M C33091A High-Side TMOS Driver The MC33091A is a High-Side TMOS Driver designed for use in harsh automotive switching applications requiring the capability of handling high voltages attributed to load and field dump transients, as well as reverse and	OCR Scan	PDF	C33091A MC33091A MC33091A, MC33091A TP50N MPT8N10
5N05 Abstract: 5n06 mtp5n05 Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTP5N05 5N06 Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TM OS T M O S P O W E R FETs 5 AM PERES T h e s e T M O S P o w e r FETs a re d e s ig n e d f o r h ig h s p e e d p o w e r	OCR Scan	PDF	MTP5N05 5N05 5n06
LTRG Abstract: P15N06 RFP15N05 15N06 5N06 RFP15N06 FM15N06 Text: cu R FM 15N 05/15N 06 R FP15N 05/15N 06 HARRIS N-Channel Enhancement Mode Power Field Effect Transistors M ay 1992 Packages Features TO -20 4 A A BOTTOM VIEW • 15A , 5 0 V and 6 0V • rD S o n = 0 .1 4 f l SOURCE y • S O A is P o w e r -D is s ip a tio n L im ite d	OCR Scan	PDF	05/15N FP15N 32e-8 0e-10 68e-8 LTRG P15N06 RFP15N05 15N06 5N06 RFP15N06 FM15N06
5N06 Abstract: No abstract text available Text: 3QE D • T TS ^S B? S G S - T H O M ^ 7 # 005^07= 3 ■ ^ S O N M T P 1 5 N 0 5 L /F I ^ O g œ iltL tK g T O K Ü D g i M T P 1 5 N 0 6 L /F I s: G _s-THOMSON N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE MTP15N05L	OCR Scan	PDF	TP15N05L TP15N05LFI TP15N06L TP15N06LFI 500ms 5N06
5N05 Abstract: 5n06 MTP5N05 MTP5N06 MTP4N08 MTP4N10 5n0506 Text: <8> MTP4N08, MTP5N05 MTP4N10, 5N06 MOTOROLA D e s i g n e r ’s D a t a S h e e t 4.0 and 5.0 AMPERE N-CHANNEL TMOS POWER FET N -C H A N N E L ENHANCEM ENT M ODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTO R rDS on = 0-8 OHM 80 and 100 VOLTS These TMOS Power FETs are designed for low voltage, high	OCR Scan	PDF	MTP4N08, MTP5N05 MTP4N10, MTP5N06 5N05 5n06 MTP5N06 MTP4N08 MTP4N10 5n0506
5n06 Abstract: MTD5N05-1 369A MTD5N06 Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD5N05 5N06 P o w e r Field E ffe c t T ra n sisto rs N -C h ann el E n hancem ent M o d e S ilic o n G ate T M O S D P A K fo r Su rfac e M o u n t or Insertion M ount TM O S POWER FETs 5 AMPERES	OCR Scan	PDF	MTD5N05-1, MTD5N06-1 69A-04 MTD5N05, MTD5N06 5n06 MTD5N05-1 369A MTD5N06
5N10E Abstract: 5n05e 5N06E 5n06 SISCO transistor 1183 4n60e 14n24 5p06 6N25D Text: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Small-Signal Transistor Dice Die type Recommended bond wire diam eter' nm Die topology Page -0 .8 .-2 .0 -0 .8 .-2 .0 SISC0.5P05E SISC3.2P05E 22 22 LA LC 1183 1183 - 1 .0 .-2 .0 SISC0.5P06E 22 LA 1183	OCR Scan	PDF	5P05E 2P05E 5P06E 2P10E 2P20E 4P24E 2N05E 5N05E 5N06E 5N65E 5N10E 5n06 SISCO transistor 1183 4n60e 14n24 5p06 6N25D
5n06 Abstract: diode c335 5N05 SEFP5N05 SEFP5N06 Text: S G S-THOHSON D7E » \| 7la-H37 0018113 0 II 73C 1 7 6 1 0 D I: I, N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors. ^stg Ti	OCR Scan	PDF	7la-H37 SEFP5N05 SEFP5N06 0V/60V C-335 5n06 diode c335 5N05 SEFP5N06
5n06 Abstract: w75n06 75n06 Text: SGS-THOMSON 75N 06/fi S T W 7 5 N 06 sth N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V S TH 75N 06 5N06FI S TH 75N 06 • • . ■ ■ . ■ ■ dss 60 V 60 V 60 V R DS on Id < 0 .0 1 4 ß < 0 .0 1 4 ß < 0 .0 1 4 ß 75 A 48 A 75 A T Y P IC A L RDS(on) = 0.011 Q	OCR Scan	PDF	06/fi STH75N06FI O-247 O-218 5n06 w75n06 75n06

5N06 Search Results

5N06 Result Highlights (6)

5N06 Price and Stock

Goford Semiconductor GT025N06AM

Infineon Technologies AG IAUC90N10S5N062ATMA1

Renesas Electronics Corporation NP45N06VDK-E1-AY

onsemi NTMYS025N06CLTWG

onsemi NVMYS025N06CLTWG

5N06 Datasheets Context Search

5n06

5n06

5n06v

5n06

IRFD1Z3 equivalent

TP50N

5N05

LTRG

5N06

5N05

5n06

5N10E

5n06

5n06