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    180X220 Price and Stock

    CR Seals 180X220X16 HS8 V

    Single Lip Oil Seal, I.D. 180 mm, O.D. 220 mm, Thickness 16 mm | CR Seals (SKF) 180X220X16 HS8 V
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    RS 180X220X16 HS8 V Bulk 4 Weeks 1
    • 1 $556.36
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    CR Seals 180X220X15 HDS2 V

    Single Lip Oil Seal, I.D. 180 mm, O.D. 220 mm, Thickness 15 mm | CR Seals (SKF) 180X220X15 HDS2 V
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    RS 180X220X15 HDS2 V Bulk 4 Weeks 1
    • 1 $665.42
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    CR Seals 180X220X16 HDS1 V

    Single Lip Oil Seal, I.D. 180 mm, O.D. 220 mm, Thickness 16 mm | CR Seals (SKF) 180X220X16 HDS1 V
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    RS 180X220X16 HDS1 V Bulk 4 Weeks 1
    • 1 $640.81
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    CR Seals 180X220X16 HDS2 R

    Single Lip Oil Seal, I.D. 180 mm, O.D. 220 mm, Thickness 16 mm | CR Seals (SKF) 180X220X16 HDS2 R
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    RS 180X220X16 HDS2 R Bulk 4 Weeks 1
    • 1 $637.99
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    CR Seals 180X220X16 HSS8 V

    Radial Shaft Seal, I.D. 180 mm, O.D. 220 mm, Thickness 16 mm | CR Seals (SKF) 180X220X16 HSS8 V
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    RS 180X220X16 HSS8 V Bulk 4 Weeks 1
    • 1 $558.37
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    180X220 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IPC-SM-780

    Abstract: VN20NSP VN20N VN20SP
    Text: APPLICATION NOTE  PowerSO-10TM: A NEW SURFACE MOUNT POWER PACKAGE by A. Ehnert, V. Sukumar and J. Diot ABSTRACT A new surface mount power package is introduced in this paper. Todaythere is a great need for a true high power surface mount package. This power package was designed


    Original     		PDF PowerSO-10TM: PowerSO-10 O-220 1999STMicroelectronics IPC-SM-780 VN20NSP VN20N VN20SP

    TO220S - TO-220 Heatsink Small - Aluminium

    Abstract: IPC-SM-780 "Intelligent Power Devices" VN20NSP IPC-SM-785 VN20SP
    Text: APPLICATION NOTE PowerSO-10TM: A NEW SURFACE MOUNT POWER PACKAGE by A. Ehnert, V. Sukumar and J. Diot ABSTRACT A new surface mount power package is introduced in this paper. Today there is a great need for a true high power surface mount package. This power package was designed


    Original     		PDF PowerSO-10TM: PowerSO-10 O-220 TO220S - TO-220 Heatsink Small - Aluminium IPC-SM-780 "Intelligent Power Devices" VN20NSP IPC-SM-785 VN20SP

    Untitled

    Abstract: No abstract text available
    Text: / = T SGS-THOMSON [*^ MttJ(êir[EMD(g§ * 7 . # IRF740 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 180x220 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION:


    OCR Scan     		PDF 180x220 20x16 IRF740

    C0073

    Abstract: f740
    Text: {Z71T,» SGS-THOMSON SKaOfflQIlLlKg'u’M O e i IR F 740 CHIP * N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 180x220 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:


    OCR Scan     		PDF 180x220 C-0073 C0073 f740

    transistor IRF740

    Abstract: irf740 transistor IRF740
    Text: 3QE I D D 7 ciS c1 53 7 O Q 3Q m O fl • S G S-THOMSON SGS-THOMSON ' "~p3Q ^ 3 I[LiraMO gS IRF740 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 180x220 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS: 6100 A


    OCR Scan     		PDF 0Q3Q14Q IRF740 180x220 29x23 20x16 transistor IRF740 irf740 transistor

    1.2 Micron CMOS Process Family

    Abstract: CMOS GATE ARRAYs
    Text: High Reliability Fast CMOS Gate Arrays U N IV E R S A L S E M IC O N D U C T O R INC. ranging from 100 to 6000 equivalent gates and a maximum pin count ranging from 24 to 120. FEATURES: • • • • • Single & Dual Layer Metal Source/D rain Contacts Programmable


    OCR Scan     		PDF

    vexta

    Abstract: mje 3001 RESISTOR BF 0207 BF243 BF 184 transistor NPN/NF 034 BF249 VAR10 bf345 BETA-240
    Text: Semi-Custom & Custom Solutions Calogic designs and manufactures Semi-Custom and Custom Bipolar Junction Isolated Jl and Dielectrically isolated (Dl) products SPICE models, layout, DRC and ERC are available. These processes are executed in our own state of the art FAB


    OCR Scan     		PDF

    MOSFET Termination Structure

    Abstract: No abstract text available
    Text: rz7 SGS-THOMSON ^ 7 Mm [ j ^ 0 [ K ] Q i [ L [ l © i r [ Ë ] W 0© S A P P L IC A T IO N N O T E HIGH DENSITY POWER MOSFETS Fig. 1 - SGS POWER MOSFET structure INTRODUCTION POWER MOSFET-transistor are fabricated using VLSI technology. A simple chip contains thousands


    OCR Scan     		PDF STVHD90. STVHD90 MOSFET Termination Structure

    Untitled

    Abstract: No abstract text available
    Text: High Reliability Fast CMOS Gate Arrays UNIVERSAL SEMICONDUCTOR INC. ranging from 100 to 6000 equivalent gates and a maximum pin count ranging from 24 to 120. FEATURES: • • • • • • • • • • • • Single & Dual Layer Metal Source/D rain Contacts Programmable


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Jen: 495 739-09-95, 644-41-29 BeKTopHbie HHBepTopbi TOSHIBA cepMM VFS11 CO B C T p o e H H b IM C e T e B b IM $ M H b T p O M npMMeHaroTca flna riMTaHM^ Tpex#a3Hbix flBMraieneM nepeMeHHoro TOKa. MHBepTopw ocHOBaHH Ha npMHU,Mne ynpaBneHMA BeKTopoM MarnMTHoro nona 6e3


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: , . , Universal Semiconduc tot HIGH RELIABILITY FAST CMOS GATE arrays FEATURES : ISO-2/ISO-3/ISO-5 GATE ARRAY DESCRIPTION . The ISO 2 /3 /5 series o f silicon gate CMOS arrays are high perform ance fam ilies o f eleven arrays each w ifh co m p le xity ranging from 100 to 2 4 0 0 equivalent gates and a m axim um


    OCR Scan     		PDF 410x410

    d 526 0 6J

    Abstract: No abstract text available
    Text: Æ T SGS-THOMSON * 7/. APPLICATION NOTE PLASTIC PACKAGES FOR POWER DISCRETES AND ICs 1.BRIEF OVERVIEW OF TECHNOLOGY The plastic package of a power chip serves four main functions: i Electrical interconnection between the silicon chip and the external circuit;


    OCR Scan     		PDF PowerSO-10 d 526 0 6J

    sgs mosfet

    Abstract: buz11 application note FZJ 101
    Text: rZ J *> 7# . S C S -T H O M S O N l«BËl5i i [ L i e ï » H 0 g i APPLICATION NOTE HIGH DENSITY POWER MOSFETS Fig. 1 - SGS POWER MOSFET structure INTRODUCTION POWER MOSFET'transistor are fabricated using VLSI technology. A simple chip contains thousands


    OCR Scan     		PDF STVHD90. STVHD90 sgs mosfet buz11 application note FZJ 101

    pMOS NAND GATE

    Abstract: A540B ISO-5
    Text: UNIVERSAL SEMICONDUCTORS HE D ] “=131,0341 ODGQG4S 3 | T - «¿3.- //- 0 e] High Reliability Fast CMOS Gate Arrays UNIVERSAL SGMICONDUCTOR INC. FEATURES: • • • • • • • • •


    OCR Scan     		PDF 13ba311 000D0M5 410x410 390x390 pMOS NAND GATE A540B ISO-5