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    TDK Corporation C4532X7R1H685K250KB

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 1812 50V 6.8uF X7R 10% T: 2.5mm
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    TTI C4532X7R1H685K250KB Reel 26,000 500
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    TDK Corporation C4532X7R1H685KT

    TDKC4532X7R1H685KT - Tape and Reel (Alt: C4532X7R1H685KT)
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    Avnet Abacus C4532X7R1H685KT Reel 143 Weeks 500
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    C4532X7R1H685KT Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage


    Original     		PDF MW7IC2220N MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1

    MRF8P20140WH/HS

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WH/HS

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original     		PDF AFT20P140--4WN AFT20P140-4WNR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 1, 11/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3

    DB3-5D

    Abstract: ATC800B J137 74 AN1955 C3225X7R1H225KT DB35D MRF8S19260HSR
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S19260H Rev. 0, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S19260HR6 MRF8S19260HSR6 Designed for CDMA and multi - carrier base station applications with


    Original     		PDF MRF8S19260H MRF8S19260HR6 MRF8S19260HSR6 MRF8S19260HR6 DB3-5D ATC800B J137 74 AN1955 C3225X7R1H225KT DB35D MRF8S19260HSR

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S19260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S19260HR6 MRF8S19260HSR6 Designed for CDMA and multicarrier base station applications with


    Original     		PDF MRF8S19260H MRF8S19260HR6 MRF8S19260HSR6 MRF8S19260HR6

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 1, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station


    Original     		PDF MRF8S7170N MRF8S7170NR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 2, 2/2014 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 618 to 803 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S7170N MRF8S7170NR3 2/2014Semiconductor,

    MRF8P20140WHS

    Abstract: mrf8p20140 J473 MRF8P20140W
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WHS mrf8p20140 J473 MRF8P20140W

    MOSFET J132

    Abstract: J132 MOSFET J127 mosfet J1955 ATC100B101 MRF8S7170N 748 transistor on AN1955 JESD22-A113 JESD22-A114
    Text: Document Number: MRF8S7170N Rev. 0, 2/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station


    Original     		PDF MRF8S7170N MRF8S7170NR3 MOSFET J132 J132 MOSFET J127 mosfet J1955 ATC100B101 MRF8S7170N 748 transistor on AN1955 JESD22-A113 JESD22-A114

    C5750X7S2A106KT

    Abstract: AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original     		PDF AFT20P140--4WN AFT20P140-4WNR3 AFT20P140--4WN C5750X7S2A106KT AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501

    C3225Y5V1H106ZT

    Abstract: 4000 watts power amplifier circuit diagram ATC100B1R1JT500XT ATC100B8R2BT500XT ATC100B1R0JT500XT C3225Y5V1H106 J9000 MW7IC2220GNR1 MW7IC2220N A114
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 1, 1/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on - chip matching that makes it usable from 2000 to 2200 MHz. This multi - stage


    Original     		PDF MW7IC2220N MW7IC2220N MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 C3225Y5V1H106ZT 4000 watts power amplifier circuit diagram ATC100B1R1JT500XT ATC100B8R2BT500XT ATC100B1R0JT500XT C3225Y5V1H106 J9000 A114

    C3225Y5V1H106ZT

    Abstract: C3216X7R2E104KT A114 A115 AN1977 AN1987 JESD22 MW7IC2220GNR1 MW7IC2220N MW7IC2220NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 0, 9/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on - chip matching that makes it usable from 2000 to 2200 MHz. This multi - stage


    Original     		PDF MW7IC2220N MW7IC2220N MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 C3225Y5V1H106ZT C3216X7R2E104KT A114 A115 AN1977 AN1987 JESD22 MW7IC2220NBR1

    ATC800B1

    Abstract: No abstract text available
    Text: Document Number: MRF8S19260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S19260HR6 MRF8S19260HSR6 Designed for CDMA and multicarrier base station applications with


    Original     		PDF MRF8S19260H MRF8S19260HR6 MRF8S19260HSR6 MRF8S19260HSR6 MRF8S19260H ATC800B1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 1, 11/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original     		PDF AFT20P140--4WN 1880-2025dated AFT20P140-4WNR3 AFT20P140-4WGNR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 1, 1/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original     		PDF AFT20P140--4WN AFT20P140-4WNR3 AFT20P140-4WGNR3 1/2014Semiconductor,

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S19140H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S19140HR3 MRF8S19140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with


    Original     		PDF MRF8S19140H MRF8S19140HR3 MRF8S19140HSR3 MRF8S19140HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage


    Original     		PDF MW7IC2220N MW7IC2220N MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1

    MOSFET J132

    Abstract: J132 MOSFET J127 mosfet MRF8S7170N AN1955 MRF8S7170NR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 1, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station


    Original     		PDF MRF8S7170N MRF8S7170NR3 MOSFET J132 J132 MOSFET J127 mosfet MRF8S7170N AN1955 MRF8S7170NR3