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    ATC800B Search Results

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    ATC800B Price and Stock

    American Technical Ceramics Corp ATC800B0R3BTDRD

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    Bristol Electronics ATC800B0R3BTDRD 16,000
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    American Technical Ceramics Corp ATC800B0R9BT500XT

    CAPACITOR, CERAMIC, 500V, 30PPM/CEL TC, 0.9PF, SURFACE MOUNT, 1111
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    Quest Components ATC800B0R9BT500XT 55
    • 1 $5.8167
    • 10 $4.2656
    • 100 $3.8778
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    American Technical Ceramics Corp ATC800B1R5BT500XT

    CERAMIC CAPACITOR, CERAMIC, 500V, 6.67% +TOL, 6.67% -TOL, C0G, 30PPM/CEL TC, 0.0000015UF, SURFACE MOUNT, 1111
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    Quest Components ATC800B1R5BT500XT 840
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    American Technical Ceramics Corp ATC800B200GT500XT

    CERAMIC CAPACITOR, CERAMIC, 500V, 2% +TOL, 2% -TOL, C0G, 30PPM/CEL TC, 0.00002UF, SURFACE MOUNT, 1111
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    Quest Components ATC800B200GT500XT 1,527
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    • 1000 $6.4965
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    American Technical Ceramics Corp ATC800B2R7BT500XT

    CERAMIC CAPACITOR, CERAMIC, 500V, 3.7037% +TOL, 3.7037% -TOL, C0G, 30PPM/CEL TC, 0.0000027UF, SURFACE MOUNT, 1111
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    Quest Components ATC800B2R7BT500XT 3,256
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    ATC800B2R7BT500XT 172
    • 1 $4.4697
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    • 100 $2.7563
    • 1000 $2.7563
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    ATC800B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26P100â

    ATC800B

    Abstract: BLF7G20LS-200 BLF7G20
    Text: BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 2 — 27 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance


    Original     		PDF BLF7G20L-200; BLF7G20LS-200 BLF7G20L-200 7G20LS-200 ATC800B BLF7G20LS-200 BLF7G20

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at


    Original     		PDF MRF6V13250H MRF6V13250HR3 MRF6V13250HSR3 MRF6V13250HR3

    Z25 transistor

    Abstract: AFT05MP075N ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1 AFT05MP075NR1
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		PDF AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 Z25 transistor ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1

    RFG1M20180

    Abstract: ATC800B820JT
    Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to


    Original     		PDF RFG1M20180 RFG1M20180 RF400-2 -36dBc -55dBc DS120418 ATC800B820JT

    Untitled

    Abstract: No abstract text available
    Text: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband  Single Circuit for 225 - 450MHz  48V Modulated Typical


    Original     		PDF RFHA1042 225MHz 450MHz RFHA1042 RF400-2 -26dBc

    Untitled

    Abstract: No abstract text available
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


    Original     		PDF RF3931 900MHz EAR99 RF3931 DS120306

    Untitled

    Abstract: No abstract text available
    Text: RFG1M20180 RFG1M20180 1.8 GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT technology Typical peak modulated power>180W Advanced heat-sink technology Single circuit for 1.8GHz to


    Original     		PDF RFG1M20180 RFG1M20180 RF400-2 -36dBc -55dBc DS110406

    BLF578

    Abstract: AN10858 planar transformer theory DVB-T Schematic Transmission-Line Conversion Transformers TIC4000 planar transformer layout ATC800B101GT500X ATC800B471JT200X DVB-T transistor amplifier
    Text: AN10858 174 MHz to 230 MHz DVB-T power amplifier with the BLF578 Rev. 02 — 26 March 2010 Application note Document information Info Content Keywords BLF578, LDMOS, DVB, planar balun Abstract This application note describes the design and performance of a 200 W


    Original     		PDF AN10858 BLF578 BLF578, AN10858 BLF578 planar transformer theory DVB-T Schematic Transmission-Line Conversion Transformers TIC4000 planar transformer layout ATC800B101GT500X ATC800B471JT200X DVB-T transistor amplifier

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium


    Original     		PDF RFHA1027 RFHA1027 DS131216

    Untitled

    Abstract: No abstract text available
    Text: RFG1M20090 RFG1M20090 90W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20090 is optimized for commercial infrastructure, military communication, and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed


    Original     		PDF RFG1M20090 RFG1M20090 DS130823

    RO4350B max current

    Abstract: No abstract text available
    Text: BLF8G20LS-200V Power LDMOS transistor Rev. 1 — 4 July 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF8G20LS-200V RO4350B max current

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-260A Power LDMOS transistor Rev. 2 — 9 November 2012 Preliminary data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.


    Original     		PDF BLF8G20LS-260A

    Untitled

    Abstract: No abstract text available
    Text: BLP15M7160P Power LDMOS transistor Rev. 1 — 10 January 2014 Objective data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


    Original     		PDF BLP15M7160P

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-200V Power LDMOS transistor Rev. 1 — 4 July 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF8G20LS-200V

    C3225X7R2A225KT

    Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


    Original     		PDF MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 C3225X7R2A225KT 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-200V Power LDMOS transistor Rev. 3 — 21 January 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.


    Original     		PDF BLF8G20LS-200V

    Untitled

    Abstract: No abstract text available
    Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 3 — 26 February 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.


    Original     		PDF BLF2425M7L250P; BLF2425M7LS250P BLF2425M7L250P BLF2425M7LS250P 2425M7LS250P

    Untitled

    Abstract: No abstract text available
    Text: BLF8G22LS-140 Power LDMOS transistor Rev. 2 — 10 April 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF8G22LS-140

    mrf6v13250h

    Abstract: ATC800B101JT500XT T491X226K035AT AN1955 MRF6V13250HS MRF6V13
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at


    Original     		PDF MRF6V13250H MRF6V13250HR3 MRF6V13250HSR3 MRF6V13250HR3 mrf6v13250h ATC800B101JT500XT T491X226K035AT AN1955 MRF6V13250HS MRF6V13

    MRF6VP3450H

    Abstract: MRF6VP3450H 470-860 MRF6VP3450HR5 DVB-T Schematic MRF6Vp3450 MRF6VP3450HR6 ATC100B331 ATC800B ATC800B100J500XT ATC100B331GT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 4, 4/2010 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6VP3450H MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450H MRF6VP3450H 470-860 DVB-T Schematic MRF6Vp3450 ATC100B331 ATC800B ATC800B100J500XT ATC100B331GT500XT

    Untitled

    Abstract: No abstract text available
    Text: NPT2020 Preliminary Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-3.5 GHz 48V Operation Industry Standard Package


    Original     		PDF NPT2020 NPT2020 NDS-037

    amplifier 900mhz

    Abstract: No abstract text available
    Text: RF3931 30W GaN Wideband Power Amplifier Package: Hermetic 2-Pin Flanged Ceramic Features • Broadband Operation DC to 3.5GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology  Gain = 15dB at 2GHz  48V Operation Typical Performance at 900MHz


    Original     		PDF RF3931 900MHz RF3931 DS130501 amplifier 900mhz

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT26P100−4WS Rev. 1, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26P100â