MRF8P20140WHS Search Results

MRF8P20140WHS Price and Stock

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NXP Semiconductors MRF8P20140WHSR5 RF MOSFET LDMOS 28V NI780
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MRF8P20140WHSR5	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
NXP Semiconductors MRF8P20140WHSR3 RF MOSFET LDMOS 28V NI780
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MRF8P20140WHSR3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	MRF8P20140WHSR3	Bulk			250	1 - 10 - 100 $60.14 1000 $60.14 10000 $60.14	Buy Now
Rochester Electronics	MRF8P20140WHSR3		250		1	1 $70.13 10 $70.13 100 $65.92 1000 $59.61 10000 $59.61	Buy Now
Freescale Semiconductor MRF8P20140WHSR5 RF 2-Element, S Band, N-Channel Power MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	MRF8P20140WHSR5		50		1	1 $107.07 10 $107.07 100 $100.65 1000 $91.01 10000 $91.01	Buy Now

MRF8P20140WHS Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MRF8P20140WHSR3		Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF LDMOS 28V 500MA NI780S-4		Original	PDF
MRF8P20140WHSR5		Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF LDMOS 28V 500MA NI780S-4		Original	PDF

MRF8P20140WHS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MRF8P20140WH/HS Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WH/HS	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 1, 11/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3	PDF
MMZ20363B Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless	Original		PDF
MRF8P20140WHS Abstract: mrf8p20140 J473 MRF8P20140W Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WHS mrf8p20140 J473 MRF8P20140W	PDF
Freescale Rugged RF Abstract: mrf8p20140 freescale power RF products digital Pre-distortion NI-780 MRF8P20140WHS Text: Freescale enables smaller size base stations with high efficiency, wide bandwidth power amplifier products TM Freescale Semiconductor General Business Information. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2011.	Original	MRF8P20165WH/HS sheet/MRF8P20165WH Freescale Rugged RF mrf8p20140 freescale power RF products digital Pre-distortion NI-780 MRF8P20140WHS	PDF