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    TDK Corporation C3216X7R2E104K160AA

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 250V 0.1uF X7R 10% T: 1.6mm
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    Mouser Electronics C3216X7R2E104K160AA 66,212
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    TTI C3216X7R2E104K160AA Reel 54,000 2,000
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    TDK Corporation C3216X7R2E104K160AM

    Multilayer Ceramic Capacitors MLCC - SMD/SMT SUGGESTED ALTERNATE 810-C3216X7R2E104KST
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    Mouser Electronics C3216X7R2E104K160AM 869
    • 1 $0.32
    • 10 $0.149
    • 100 $0.089
    • 1000 $0.077
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    TDK Corporation C3216X7R2E104KT0L0U

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    Bristol Electronics C3216X7R2E104KT0L0U 4,557
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    ComSIT USA C3216X7R2E104KT0L0U 200
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    TDK Corporation C3216X7R2E104KT

    TDKC3216X7R2E104KT - Tape and Reel (Alt: C3216X7R2E104KT)
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    Avnet Abacus C3216X7R2E104KT Reel 143 Weeks 2,000
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    TDK Corporation C3216X7R2E104KT0LOU

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    Chip Stock C3216X7R2E104KT0LOU 2,160
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    C3216X7R2E104KT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CKD310

    Abstract: CGA3E C3216X7R2E473KT CKD310JB0J226S CC01005 AEC-Q200 C1005 C1608 C3216 CC0201
    Text: TDK MLCC US Catalog Version A10 This page is intentionally left blank. ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ General Application, C Series Mid Voltage Application, C Series High Voltage Application, C Series High Temperature Application, C Series Tight Tolerance Capacitor, C Series


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage


    Original     		PDF MW7IC2220N MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1

    c2012 TDK

    Abstract: C3225X7R2A225KT5 C3216X7R2E104KT CC2220 C2012X7R1H104KT MLCC CRACK 250v 104 K capacitor C5750X7R1E156MT5 C3216X7R2J103KT 250v 1.0 K capacitor
    Text: C Series Open Mode Design Type: C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: January 2011 TDK MLCC US Catalog Version A11 REMINDERS Please read before using this product SAFETY REMINDERS REMINDERS


    Original     		PDF C2012 CC0805] C3216 CC1206] C3225 CC1210] C4532 CC1812] C5750 CC2220] c2012 TDK C3225X7R2A225KT5 C3216X7R2E104KT CC2220 C2012X7R1H104KT MLCC CRACK 250v 104 K capacitor C5750X7R1E156MT5 C3216X7R2J103KT 250v 1.0 K capacitor

    atc100b6r2

    Abstract: KME63VB471M12x25LL AN1955 MRF8S9170NR3 KME63VB471M
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 1, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9170NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9170N MRF8S9170NR3 atc100b6r2 KME63VB471M12x25LL AN1955 MRF8S9170NR3 KME63VB471M

    C3225Y5V1H106ZT

    Abstract: 4000 watts power amplifier circuit diagram ATC100B1R1JT500XT ATC100B8R2BT500XT ATC100B1R0JT500XT C3225Y5V1H106 J9000 MW7IC2220GNR1 MW7IC2220N A114
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 1, 1/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on - chip matching that makes it usable from 2000 to 2200 MHz. This multi - stage


    Original     		PDF MW7IC2220N MW7IC2220N MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 C3225Y5V1H106ZT 4000 watts power amplifier circuit diagram ATC100B1R1JT500XT ATC100B8R2BT500XT ATC100B1R0JT500XT C3225Y5V1H106 J9000 A114

    C3225Y5V1H106ZT

    Abstract: C3216X7R2E104KT A114 A115 AN1977 AN1987 JESD22 MW7IC2220GNR1 MW7IC2220N MW7IC2220NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 0, 9/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on - chip matching that makes it usable from 2000 to 2200 MHz. This multi - stage


    Original     		PDF MW7IC2220N MW7IC2220N MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 C3225Y5V1H106ZT C3216X7R2E104KT A114 A115 AN1977 AN1987 JESD22 MW7IC2220NBR1

    J377

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 1, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9170NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9170N MRF8S9170NR3 J377

    capacitor 100MF 100v

    Abstract: C3225X7R2A225KT5 C2012X7R2A223KT5 cc2220 CC2220 50V 1uF C4532X7R1E475KT MLCC CRACK C2012X8R1H683KT5 C3225X7R2A225 C2012X7R2E682
    Text: C Series Open Mode Design Type: C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: April 2011 TDK MLCC US Catalog Version B11 REMINDERS Please read before using this product SAFETY REMINDERS REMINDERS


    Original     		PDF C2012 CC0805] C3216 CC1206] C3225 CC1210] C4532 CC1812] C5750 CC2220] capacitor 100MF 100v C3225X7R2A225KT5 C2012X7R2A223KT5 cc2220 CC2220 50V 1uF C4532X7R1E475KT MLCC CRACK C2012X8R1H683KT5 C3225X7R2A225 C2012X7R2E682

    CKCM25X7R

    Abstract: inside parts for plasma tv C4520X7R3D tdk c4532x5r0j107m C5750X7R1H106 CKG57NX7R2 CKG57NX7R1H C5750Y5V1H226 C1608X7R0J MLCC CRACK
    Text: TDK MLCC US Catalog Version B11 of TDK MLCC US Catalog                General Application, C Series …….………………………… 3 Mid Voltage Application, C Series ….….…………………. 75 High Voltage Application, C Series .…………………….105


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage


    Original     		PDF MW7IC2220N MW7IC2220N MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1

    ATC100B2R0BT500X

    Abstract: atc100b6r8 ATC100B3R3 transistor j326 ATC100B4R7CT500X C5750JF1H226ZT CRCW12065R10 transistor J333 ATC100B6R8CT500X KME63VB
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 0, 9/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF8S9170NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9170N MRF8S9170NR3 ATC100B2R0BT500X atc100b6r8 ATC100B3R3 transistor j326 ATC100B4R7CT500X C5750JF1H226ZT CRCW12065R10 transistor J333 ATC100B6R8CT500X KME63VB