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    MRF8P20140WH Search Results

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    MRF8P20140WH Price and Stock

    NXP Semiconductors MRF8P20140WHR3

    RF MOSFET LDMOS 28V NI780
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    NXP Semiconductors MRF8P20140WHSR5

    RF MOSFET LDMOS 28V NI780
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    NXP Semiconductors MRF8P20140WHSR3

    RF MOSFET LDMOS 28V NI780
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    Freescale Semiconductor MRF8P20140WHSR5

    RF 2-Element, S Band, N-Channel Power MOSFET
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    Rochester Electronics MRF8P20140WHSR5 50 1
    • 1 $112.43
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    • 100 $105.68
    • 1000 $95.56
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    MRF8P20140WH Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MRF8P20140WHR3 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, FET RF LDMOS 28V 500MA NI780-4 Original PDF
    MRF8P20140WHR5 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, FET RF LDMOS 28V 500MA NI780-4 Original PDF
    MRF8P20140WHSR3 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, FET RF LDMOS 28V 500MA NI780S-4 Original PDF
    MRF8P20140WHSR5 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, FET RF LDMOS 28V 500MA NI780S-4 Original PDF

    MRF8P20140WH Datasheets Context Search

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    MRF8P20140WH/HS

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WH/HS

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 1, 11/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3

    MRF8P20140WHS

    Abstract: mrf8p20140 J473 MRF8P20140W
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WHS mrf8p20140 J473 MRF8P20140W

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original     		PDF

    Freescale Rugged RF

    Abstract: mrf8p20140 freescale power RF products digital Pre-distortion NI-780 MRF8P20140WHS
    Text: Freescale enables smaller size base stations with high efficiency, wide bandwidth power amplifier products TM Freescale Semiconductor General Business Information. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2011.


    Original     		PDF MRF8P20165WH/HS sheet/MRF8P20165WH Freescale Rugged RF mrf8p20140 freescale power RF products digital Pre-distortion NI-780 MRF8P20140WHS