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    ATC800B1 Price and Stock

    American Technical Ceramics Corp ATC800B1R5BT500XT

    CERAMIC CAPACITOR, CERAMIC, 500V, 6.67% +TOL, 6.67% -TOL, C0G, 30PPM/CEL TC, 0.0000015UF, SURFACE MOUNT, 1111
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    Quest Components ATC800B1R5BT500XT 840
    • 1 $5.25
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    • 100 $5.25
    • 1000 $2.625
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    Kyocera AVX Components 800B100FT500T

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 500V 10pF Tol 1%
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    TTI 800B100FT500T Reel 3,500 500
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    • 1000 $3.67
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    Kyocera AVX Components 800B1R0BT500T

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 500V 1pF Tol 0.1pF
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    TTI 800B1R0BT500T Reel 3,000 500
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    Kyocera AVX Components 800B1R8BT500T

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 500V 1.8pF Tol 0.1pF
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    TTI 800B1R8BT500T Reel 2,500 500
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    • 1000 $2.26
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    Kyocera AVX Components 800B1R0BT500XT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 500volts 1pF NP0
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    TTI 800B1R0BT500XT Reel 1,000 500
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    ATC800B1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at


    Original     		PDF MRF6V13250H MRF6V13250HR3 MRF6V13250HSR3 MRF6V13250HR3

    Z25 transistor

    Abstract: AFT05MP075N ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1 AFT05MP075NR1
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		PDF AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 Z25 transistor ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1

    Untitled

    Abstract: No abstract text available
    Text: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband  Single Circuit for 225 - 450MHz  48V Modulated Typical


    Original     		PDF RFHA1042 225MHz 450MHz RFHA1042 RF400-2 -26dBc

    Untitled

    Abstract: No abstract text available
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


    Original     		PDF RF3931 900MHz EAR99 RF3931 DS120306

    BLF578

    Abstract: AN10858 planar transformer theory DVB-T Schematic Transmission-Line Conversion Transformers TIC4000 planar transformer layout ATC800B101GT500X ATC800B471JT200X DVB-T transistor amplifier
    Text: AN10858 174 MHz to 230 MHz DVB-T power amplifier with the BLF578 Rev. 02 — 26 March 2010 Application note Document information Info Content Keywords BLF578, LDMOS, DVB, planar balun Abstract This application note describes the design and performance of a 200 W


    Original     		PDF AN10858 BLF578 BLF578, AN10858 BLF578 planar transformer theory DVB-T Schematic Transmission-Line Conversion Transformers TIC4000 planar transformer layout ATC800B101GT500X ATC800B471JT200X DVB-T transistor amplifier

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium


    Original     		PDF RFHA1027 RFHA1027 DS131216

    Untitled

    Abstract: No abstract text available
    Text: RFG1M20090 RFG1M20090 90W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20090 is optimized for commercial infrastructure, military communication, and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed


    Original     		PDF RFG1M20090 RFG1M20090 DS130823

    C3225X7R2A225KT

    Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


    Original     		PDF MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 C3225X7R2A225KT 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0

    mrf6v13250h

    Abstract: ATC800B101JT500XT T491X226K035AT AN1955 MRF6V13250HS MRF6V13
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at


    Original     		PDF MRF6V13250H MRF6V13250HR3 MRF6V13250HSR3 MRF6V13250HR3 mrf6v13250h ATC800B101JT500XT T491X226K035AT AN1955 MRF6V13250HS MRF6V13

    MRF6VP3450H

    Abstract: MRF6VP3450H 470-860 MRF6VP3450HR5 DVB-T Schematic MRF6Vp3450 MRF6VP3450HR6 ATC100B331 ATC800B ATC800B100J500XT ATC100B331GT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 4, 4/2010 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6VP3450H MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450H MRF6VP3450H 470-860 DVB-T Schematic MRF6Vp3450 ATC100B331 ATC800B ATC800B100J500XT ATC100B331GT500XT

    Untitled

    Abstract: No abstract text available
    Text: NPT2020 Preliminary Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-3.5 GHz 48V Operation Industry Standard Package


    Original     		PDF NPT2020 NPT2020 NDS-037

    amplifier 900mhz

    Abstract: No abstract text available
    Text: RF3931 30W GaN Wideband Power Amplifier Package: Hermetic 2-Pin Flanged Ceramic Features • Broadband Operation DC to 3.5GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology  Gain = 15dB at 2GHz  48V Operation Typical Performance at 900MHz


    Original     		PDF RF3931 900MHz RF3931 DS130501 amplifier 900mhz

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium


    Original     		PDF RFHA1027 RFHA1027 DS131220

    DB3-5D

    Abstract: ATC800B J137 74 AN1955 C3225X7R1H225KT DB35D MRF8S19260HSR
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S19260H Rev. 0, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S19260HR6 MRF8S19260HSR6 Designed for CDMA and multi - carrier base station applications with


    Original     		PDF MRF8S19260H MRF8S19260HR6 MRF8S19260HSR6 MRF8S19260HR6 DB3-5D ATC800B J137 74 AN1955 C3225X7R1H225KT DB35D MRF8S19260HSR

    Untitled

    Abstract: No abstract text available
    Text: RFG1M20090 1.8GHz to 2.2GHz 90W GaN Power Amplifier Package: Flanged Ceramic, 2-Pin, RF400-2 Features • Advanced GaN HEMT Technology  Peak Modulated Power >90W  Advanced Heat-Sink Technology  Single Circuit for 1.9GHz to 2.2GHz  48V Operation Typical Performance


    Original     		PDF RFG1M20090 RF400-2 44dBm -35dBc -55dBc RFG1M20090 DS130506

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


    Original     		PDF MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S19260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S19260HR6 MRF8S19260HSR6 Designed for CDMA and multicarrier base station applications with


    Original     		PDF MRF8S19260H MRF8S19260HR6 MRF8S19260HSR6 MRF8S19260HR6

    ATC100B470JT500XT

    Abstract: ATC600F101JT250XT GSC362-HYB0900 mrf8p MRF8P9210 mrf8p9210n ATC100B240JT500X ATC100B7R5CT500XT ATC100B9R1CT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9210N Rev. 0, 12/2011 c RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P9210N MRF8P9210NR3 ATC100B470JT500XT ATC600F101JT250XT GSC362-HYB0900 mrf8p MRF8P9210 ATC100B240JT500X ATC100B7R5CT500XT ATC100B9R1CT500XT

    SEMICONDUCTOR J598

    Abstract: j598 ATC800B0R8BT500XT ATC800B J739
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21172H Rev. 0, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 MRF8S21172H SEMICONDUCTOR J598 j598 ATC800B0R8BT500XT ATC800B J739

    simple power supply schematic diagram

    Abstract: RF3931S2 ATC800A3R3BT
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


    Original     		PDF RF3931 900MHz RF3931 DS120406 simple power supply schematic diagram RF3931S2 ATC800A3R3BT

    RF3931

    Abstract: 46dBm
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN


    Original     		PDF RF3931 900MHz RF3931 DS110317 46dBm

    BW030

    Abstract: No abstract text available
    Text: RFG1M20090 RFG1M20090 1.8 GHz TO 2.2GHz 90 W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Modulated Power>90W  Advanced Heat-Sink Technology 


    Original     		PDF RFG1M20090 RFG1M20090 RF400-2 44dBm -35dBc -55dBc DS110620 BW030

    capacitor 10pf

    Abstract: No abstract text available
    Text: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband   Single Circuit for 225MHz to 450MHz


    Original     		PDF RFHA1042 225MHz 450MHz RFHA1042 RF400-2 -26dBc capacitor 10pf

    Untitled

    Abstract: No abstract text available
    Text: NPT2022 Gallium Nitride 48V, 100W, DC-2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2 GHz 48V Operation Industry Standard Plastic Package


    Original     		PDF NPT2022 NPT2022 NDS-038