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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage
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MW7IC2220N
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j350 TRANSISTOR
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHT1006N Rev. 0, 5/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET RF power transistor suitable for industrial heating applications from 728 to 2700 MHz. Device is capable of both CW and pulse operation.
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MHT1006N
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C3225Y5V1H106ZT
Abstract: 4000 watts power amplifier circuit diagram ATC100B1R1JT500XT ATC100B8R2BT500XT ATC100B1R0JT500XT C3225Y5V1H106 J9000 MW7IC2220GNR1 MW7IC2220N A114
Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 1, 1/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on - chip matching that makes it usable from 2000 to 2200 MHz. This multi - stage
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MW7IC2220N
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C3225Y5V1H106ZT
4000 watts power amplifier circuit diagram
ATC100B1R1JT500XT
ATC100B8R2BT500XT
ATC100B1R0JT500XT
C3225Y5V1H106
J9000
A114
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C3225Y5V1H106ZT
Abstract: C3216X7R2E104KT A114 A115 AN1977 AN1987 JESD22 MW7IC2220GNR1 MW7IC2220N MW7IC2220NBR1
Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 0, 9/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on - chip matching that makes it usable from 2000 to 2200 MHz. This multi - stage
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MW7IC2220N
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C3225Y5V1H106ZT
C3216X7R2E104KT
A114
A115
AN1977
AN1987
JESD22
MW7IC2220NBR1
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Abstract: No abstract text available
Text: Document Number: AFT27S010N Rev. 0, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage
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MW7IC2220N
MW7IC2220N
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT27S010N Rev. 1, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.
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