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    KEMET Corporation C1206C104K5RAC7867

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 0.1uF X7R 1206 10%
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    Mouser Electronics C1206C104K5RAC7867 200,145
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    C1206104K5RAC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J593

    Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
    Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21030E AGR21030E AGR21030EU AGR21030EF DS04-163RFPP DS04-065RFPP) J593 AGR21030EF AGR21030EU JESD22-C101A J157

    J161 mosfet transistor

    Abstract: MOSFET J161 100B6R8JW
    Text: Preliminary Data Sheet July 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090EU AGR21090EF DS03-070RFPP DS02-276RFPP) J161 mosfet transistor MOSFET J161 100B6R8JW

    mosfet 1412

    Abstract: No abstract text available
    Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09090EF Hz--960 DS03-202RFPP mosfet 1412

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet October 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09070EF Hz--960 AGR09070EF DS04-007RFPP DS03-059RFPP)

    AGR21045EF

    Abstract: AGR21045XF JESD22-C101A
    Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original     		PDF AGR21045EF AGR21045EF DS04-241RFPP DS04-178RFPP) AGR21045XF JESD22-C101A

    100B100JW500X

    Abstract: AGR09090EF JESD22-C101A
    Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09090EF Hz--960 AGR09090EF DS04-058RFPP DS04-029RFPP) 100B100JW500X JESD22-C101A

    SBR2U30P1

    Abstract: No abstract text available
    Text: AL8806 HIGH EFFICIENCY 36V 1.5A BUCK LED DRIVER Description Pin Assignments The AL8806 is a step-down DC/DC converter designed to drive LEDs with a constant current. The device can drive up to 8 LEDs, depending on the forward voltage of the LEDs, in series from a


    Original     		PDF AL8806 AL8806 DS35144 SBR2U30P1

    AGR21030EF

    Abstract: 2.4 ghz mosfet AGR21030XF JESD22-C101A
    Text: AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original     		PDF AGR21030EF AGR21030EF 1030EF AGR21030XF 21045F 12-digit 2.4 ghz mosfet AGR21030XF JESD22-C101A

    "RF Power Transistor"

    Abstract: AGR18030EF JESD22-C101A transistor equivalent table 557
    Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		PDF AGR18030EF AGR18030EF 21045F "RF Power Transistor" JESD22-C101A transistor equivalent table 557

    Untitled

    Abstract: No abstract text available
    Text: AL8806 HIGH EFFICIENCY 36V 1.5A BUCK LED DRIVER Pin Assignments Description MSOP-8EP SET GND GND CTRL Maximum output current of AL8806 is set via an external resistor connected between the VIN and SET input pins. Dimming is achieved by applying either a DC voltage or a


    Original     		PDF AL8806 AL8806 DS35144

    J964

    Abstract: AGR21045EF AGR21045XF JESD22-C101A
    Text: Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original     		PDF AGR21045EF AGR21045EF CGR21045EF AGR21045XF 21045F 12-digit J964 AGR21045XF JESD22-C101A

    C20 CT

    Abstract: 100B220 sprague CT series
    Text: AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09070EF Hz--960 AGR09070EF DS04-057RFPP DS04-027RFPP) C20 CT 100B220 sprague CT series

    12v transformer

    Abstract: 0R089 capacitor 470uf 25v diode 51X 25ZLH470M NPIS64 AL8806MP8-13 capacitor 470uF SBR2U30P1
    Text: AL8806 HIGH EFFICIENCY 36V 1.5A BUCK LED DRIVER Description Pin Assignments MSOP-8EP SET GND GND CTRL Maximum output current of AL8806 is set via an external resistor connected between the VIN and SET input pins. Dimming is achieved by applying either a DC voltage or a


    Original     		PDF AL8806 AL8806 DS35144 12v transformer 0R089 capacitor 470uf 25v diode 51X 25ZLH470M NPIS64 AL8806MP8-13 capacitor 470uF SBR2U30P1

    ELECTRONIC TRANSFORMER FOR A 12V HALOGEN LAMP

    Abstract: 25ZLH470M
    Text: AL8806 HIGH EFFICIENCY 36V 1.5A BUCK LED DRIVER Description Pin Assignments MSOP-8EP SET GND GND CTRL Maximum output current of AL8806 is set via an external resistor connected between the VIN and SET input pins. Dimming is achieved by applying either a DC voltage or a


    Original     		PDF AL8806 AL8806 DS35144 ELECTRONIC TRANSFORMER FOR A 12V HALOGEN LAMP 25ZLH470M

    sm 4500

    Abstract: No abstract text available
    Text: Preliminary Data Sheet January 2003 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless


    Original     		PDF AGR21125E AGR21125EU AGR21125EF DS03-037RFPP DS03-012RFPP) sm 4500

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet August 2003 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21045E AGR21045EU AGR21045EF DS02-380RFPP DS02-276RFPP)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		PDF AGR09090EF Hz--960 DS04-134RFPP DS04-068RFPP)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090EU AGR21090EF DS04-018RFPP DS03-070RFPP)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR18090E Characteristic10-12, DS04-033RFPP DS02-326RFPP)

    J299

    Abstract: No abstract text available
    Text: Preliminary Data Sheet December 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090EU AGR21090EF DS04-059RFPP DS04-018RFPP) J299

    Johanson Technology

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09090EF Hz--960 DS04-029RFPP DS04-005RFPP) Johanson Technology

    926 sprague

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09070EF Hz--960 AGR09070EF DS04-057RFPP DS04-027RFPP) 926 sprague

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09070EF Hz--960 AGR09070EF DS04-027RFPP DS04-007RFPP)

    AL8806

    Abstract: PowerDI-123 electronic transformer halogen 12v capacitor 470uf 25v NMC1206X7R104K50TRPF 0R082 B140 B240 DFLS230LH 0R089
    Text: AL8806 HIGH EFFICIENCY 30V 1.5A BUCK LED DRIVER Pin Assignments The AL8806 is a step-down DC/DC converter designed to drive LEDs with a constant current. The device can drive up to 8 LEDs, depending on the forward voltage of the LEDs, in series from a voltage source of 6V to 30V. The AL8806


    Original     		PDF AL8806 AL8806 DS35144 PowerDI-123 electronic transformer halogen 12v capacitor 470uf 25v NMC1206X7R104K50TRPF 0R082 B140 B240 DFLS230LH 0R089