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Advanced Semiconductor Inc AGR21125EF RF MOSFET Transistors 2.11-2.17GHz 28Watt Gain 14dB
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AGR21125E Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AGR21125E		Agere Systems	FET Transistor, 125W, 2.110GHz-2.170GHz, N-Channel E-Mode, Lateral MOSFET Transistor		Original	PDF
AGR21125E		TriQuint Semiconductor	125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF
AGR21125EF		Agere Systems	125 W, 2.110 GHz - 2.170 GHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF
AGR21125EU		Agere Systems	125 W, 2.110 GHz - 2.170 GHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF

AGR21125E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
sm 4500 Abstract: No abstract text available Text: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access	Original	AGR21125E AGR21125EU AGR21125EF AGR21125End sm 4500	PDF
sm 4500 Abstract: No abstract text available Text: Preliminary Data Sheet January 2003 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless	Original	AGR21125E AGR21125EU AGR21125EF DS03-037RFPP DS03-012RFPP) sm 4500	PDF
RF POWER MOSFET Abstract: No abstract text available Text: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access	Original	AGR21125E AGR21125EU AGR21125EF AG210-12, DS04-108RFPP DS04-038RFPP) RF POWER MOSFET	PDF
C15B material sheet Abstract: C14A AGR21125E AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A Text: Preliminary Data Sheet April 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access	Original	AGR21125E AGR21125E AGR21125EU AGR21125EF DS04-166RFPP DS04-108RFPP) C15B material sheet C14A AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A	PDF
100B100JW500X Abstract: AGR21125E AGR21125EF AGR21125EU JESD22-C101A Text: Preliminary Data Sheet November 2003 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless	Original	AGR21125E AGR21125E AGR21125EU AGR21125EF DS04-038RFPP DS03-037RFPP) 100B100JW500X AGR21125EF AGR21125EU JESD22-C101A	PDF
C14A Abstract: AGR21125E AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A sm 4500 Text: AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access	Original	AGR21125E AGR21125E AGR21125EU AGR21125EF M-AGR21125F AGR21125XF 12-digit C14A AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A sm 4500	PDF
TGA2517 Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125 Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint	Original	cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125	PDF
TGA2517 Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4	Original		PDF
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM	PDF