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    Advanced Semiconductor Inc AGR21125EF

    RF MOSFET Transistors 2.11-2.17GHz 28Watt Gain 14dB
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    Mouser Electronics AGR21125EF
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    • 100 $76.26
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    • 10000 $76.26
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    AGR21125E Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    AGR21125E Agere Systems FET Transistor, 125W, 2.110GHz-2.170GHz, N-Channel E-Mode, Lateral MOSFET Transistor Original PDF
    AGR21125E TriQuint Semiconductor 125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR21125EF Agere Systems 125 W, 2.110 GHz - 2.170 GHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR21125EU Agere Systems 125 W, 2.110 GHz - 2.170 GHz, N-Channel E-Mode, Lateral MOSFET Original PDF

    AGR21125E Datasheets Context Search

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    sm 4500

    Abstract: No abstract text available
    Text: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access


    Original     		PDF AGR21125E AGR21125EU AGR21125EF AGR21125End sm 4500

    sm 4500

    Abstract: No abstract text available
    Text: Preliminary Data Sheet January 2003 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless


    Original     		PDF AGR21125E AGR21125EU AGR21125EF DS03-037RFPP DS03-012RFPP) sm 4500

    RF POWER MOSFET

    Abstract: No abstract text available
    Text: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access


    Original     		PDF AGR21125E AGR21125EU AGR21125EF AG210-12, DS04-108RFPP DS04-038RFPP) RF POWER MOSFET

    C15B material sheet

    Abstract: C14A AGR21125E AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A
    Text: Preliminary Data Sheet April 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access


    Original     		PDF AGR21125E AGR21125E AGR21125EU AGR21125EF DS04-166RFPP DS04-108RFPP) C15B material sheet C14A AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A

    100B100JW500X

    Abstract: AGR21125E AGR21125EF AGR21125EU JESD22-C101A
    Text: Preliminary Data Sheet November 2003 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless


    Original     		PDF AGR21125E AGR21125E AGR21125EU AGR21125EF DS04-038RFPP DS03-037RFPP) 100B100JW500X AGR21125EF AGR21125EU JESD22-C101A

    C14A

    Abstract: AGR21125E AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A sm 4500
    Text: AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access


    Original     		PDF AGR21125E AGR21125E AGR21125EU AGR21125EF M-AGR21125F AGR21125XF 12-digit C14A AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A sm 4500

    TGA2517

    Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
    Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint


    Original     		PDF cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125

    TGA2517

    Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
    Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4


    Original     		PDF

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


    Original     		PDF CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM