Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet October 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR09070EF
Hz--960
AGR09070EF
DS04-007RFPP
DS03-059RFPP)
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PDF
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C20 CT
Abstract: 100B220 sprague CT series
Text: AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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Original
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AGR09070EF
Hz--960
AGR09070EF
DS04-057RFPP
DS04-027RFPP)
C20 CT
100B220
sprague CT series
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PDF
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926 sprague
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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Original
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AGR09070EF
Hz--960
AGR09070EF
DS04-057RFPP
DS04-027RFPP)
926 sprague
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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Original
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AGR09070EF
Hz--960
AGR09070EF
DS04-027RFPP
DS04-007RFPP)
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet July 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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Original
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AGR09070EF
Hz--960
AGR09070EF
DS03-059RFPP
DS03-011RFPP)
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PDF
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J083
Abstract: No abstract text available
Text: Preliminary Data Sheet January 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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Original
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AGR09070EF
Hz--960
AGR09070EF
DS03-011RFPP
DS02-221RFPP)
J083
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PDF
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100B100JW500X
Abstract: AGR09070EF JESD22-C101A 100B100JW500
Text: Preliminary Data Sheet April 2004 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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Original
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AGR09070EF
Hz--960
AGR09070EF
DS04-151RFPP
DS04-057RFPP)
100B100JW500X
JESD22-C101A
100B100JW500
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PDF
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100B100JW500X
Abstract: AGR09070EF JESD22-C101A grm40x7r103k100al
Text: AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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Original
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AGR09070EF
Hz--960
AGR09070EF
perform26
100B100JW500X
JESD22-C101A
grm40x7r103k100al
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PDF
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AGRA10EM
Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station
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CA03-005RFPP-7
CA03-005RFPP-6)
AGRA10EM
APP550
APP550TM
AGR09085EF
APP550TM and APP530TM
400-kHz
agra 30
TAAD08JU2
AGR09030EF
AGR09030GUM
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