Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BUZ32 Search Results

    SF Impression Pixel

    BUZ32 Price and Stock

    Rochester Electronics LLC BUZ323

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BUZ323 Bulk 10,895 100
    • 1 -
    • 10 -
    • 100 $3.01
    • 1000 $3.01
    • 10000 $3.01
    		Buy Now

    Rochester Electronics LLC BUZ32HXKSA1

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BUZ32HXKSA1 Bulk 7,393 507
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.59
    • 10000 $0.59
    		Buy Now

    Infineon Technologies AG BUZ32

    MOSFET N-CH 200V 9.5A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BUZ32 Tube 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.86874
    • 10000 $0.86874
    		Buy Now
    Quest Components BUZ32 7,600
    • 1 $2.16
    • 10 $2.16
    • 100 $2.16
    • 1000 $0.756
    • 10000 $0.648
    		Buy Now

    Infineon Technologies AG BUZ32 H

    MOSFET N-CH 200V 9.5A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BUZ32 H Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Infineon Technologies AG BUZ32H3045AATMA1

    MOSFET N-CH 200V 9.5A TO263-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BUZ32H3045AATMA1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more BUZ32 price and stock on Findchips.com

    BUZ32 Datasheets (55)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BUZ32 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    BUZ32 Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9.5A TO220AB Original PDF
    BUZ32 Infineon Technologies Power MOSFET, 200V, TO-220, RDSon=0.4 ?, 9.5A, NL Original PDF
    BUZ32 Intersil 9.5A, 200V, 0.400 ?, N-Channel Power MOSFET Original PDF
    BUZ32 Philips Semiconductors PowerMOS Transistor Original PDF
    BUZ32 Siemens Original PDF
    BUZ32 Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) Original PDF
    BUZ32 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUZ32 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
    BUZ32 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUZ32 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ32 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BUZ32 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ32 Unknown FET Data Book Scan PDF
    BUZ32 Semelab MOS Power Transistor Scan PDF
    BUZ32 Siemens Power Transistors Scan PDF
    BUZ32 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    BUZ 323 Infineon Technologies SIPMOS Power Transistor Original PDF
    BUZ323 Infineon Technologies N-Channel SIPMOS Power Transistor, 400V, TO-218, 0.30 ?, 15.0A Original PDF
    BUZ323 Siemens Original PDF

    BUZ32 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ32

    Abstract: IEC61249-2-21
    Text: BUZ 32 H3045A . Pb-free lead plating; RoHS compliant . Halogen-free according to IEC61249-2-21 Pb-free BUZ32 H3045A Rev. 2.2 PG-TO263-3 Yes 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A


    Original     		PDF H3045A IEC61249-2-21 BUZ32 PG-TO263-3 IEC61249-2-21

    BUZ32

    Abstract: TB334
    Text: BUZ32 Semiconductor Data Sheet 9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET October 1998 File Number 2416.1 Features • 9.5A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.400Ω (BUZ32) field effect transistor designed for applications such as


    Original     		PDF BUZ32 BUZ32) TA17412. BUZ32 TB334

    L3045A

    Abstract: transistor buz 10 BUZ32
    Text: BUZ 32 L3045A . Pb-free lead plating; RoHS compliant Pb-free Yes Rev. 2.1 2009-03-10 BUZ 32 L3045A Rev 2.1 2009-03-10 BUZ 32 L3045A Rev 2.1 2009-03-10 BUZ 32 L3045A Rev 2.1 2009-03-10 BUZ 32 L3045A Rev 2.1 2009-03-10 BUZ 32 L3045A Rev 2.1 2009-03-10 BUZ32 L3045A


    Original     		PDF L3045A BUZ32 L3045A transistor buz 10

    IAf630

    Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p


    Original     		PDF RRF620 2SK755 2SK782 TX124 IRFJ220 SFN02804 SFN02814 SFN204A3 YTF220 YTF620 IAf630 RS630 BUZ73 sfn02204 tx134 sgsp567 SGSP367 2SK400

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    S 170 MOSFET TRANSISTOR

    Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
    Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and


    Original     		PDF B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book

    Untitled

    Abstract: No abstract text available
    Text: SILICONIX INC lflE D • A5 S4 7 3 5 D014bl3S Q ■ BUZ32 N-Channel Enhancement Mode Transistor TO-220AB TOP VIEW O PRODUCT SUMMARY Id . A V(BRJDSS 200 0.40 9.5 i 1 GATE 2 DRAIN (Connected to TAB) 3 SO U R C E 23 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF D014bl3S BUZ32 O-220AB

    BUZ32

    Abstract: T-39
    Text: 30E » 7=55^37 0030124 T • S w # S G S -T H O M S O N S-THOMSON G BUZ32 CHIP k 7 # [iD [S o [i[L[i(giriE(Q)iio(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS:


    OCR Scan     		PDF Q03Q12M BUZ32 156x156 15x19 MC-0074 19TERISTICS T-39

    buz32

    Abstract: No abstract text available
    Text: 7 SGS-THOMSON MÊliÂILlIfgïlMDMÊS BUZ32 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS on •d BUZ32 200 V 0.4 Q 9.5 A • 200 VO LTS FOR TELECO M S APPLICATIO NS • HIGH CURRENT - FOR PULSED LASER DRIVES • RATED FOR UNCLAM PED INDUCTIVE


    OCR Scan     		PDF BUZ32 00A//nS buz32

    Untitled

    Abstract: No abstract text available
    Text: T'ÎS'ÎBB? □GS'ibTÖ 4 • SGS-THOMSON BUZ32 IM CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR 3GE » N S G S-THOMSON TYPE V qss BUZ32 200 V Id ^DS on 0.4 a 9.5 A • 200 VOLTS FOR TELECO M S APPLICATIONS • HIGH CURR ENT - FOR PULSED LASER DRIVES • RATED FOR UNCLAM PED INDUCTIVE


    OCR Scan     		PDF BUZ32 T-39-11

    Untitled

    Abstract: No abstract text available
    Text: 3QE D • 7^5^537 SCS-THOMSON 00301SM EILKgMMtgS T ■ s 6 s-fHonioN BUZ32 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS: 6100 A DIETHICKNESS: 16 ± 2 mils


    OCR Scan     		PDF 00301SM BUZ32 156x156 15x19

    Untitled

    Abstract: No abstract text available
    Text: N AMER PH IL IP S/D ISCRET E DbE D PowerMOS transistor • ” bbSBTBl 0D14451 4 ■ BUZ32 ^_ j May 1987 GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 0D14451 BUZ32 BUZ32_ bbS3T31 0Q14H55- T-39-11 001445b bb53T31

    Untitled

    Abstract: No abstract text available
    Text: ObE D N AUER PHILIPS/DISCRETE PowerMOS transistor • b b S S ^ l 001475=1 T BUZ326 T -3^-/3; May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ326 T0218AA; BUZ326 T-39-13 00147b4 bbS3T31 OD147bS

    Untitled

    Abstract: No abstract text available
    Text: BUZ32 Semiconductor Data Sheet October 1998 9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET This is an N -C h a n n e l e n h a n c e m e n t m ode silicon g ate pow er field effect transistor d es ig n e d for applications such as File Number 2416.1 Features


    OCR Scan     		PDF BUZ32

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON ilLiraMOIgi BUZ32 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:


    OCR Scan     		PDF BUZ32 156x156 15x19

    buz32

    Abstract: No abstract text available
    Text: S G S -T H O M S O N w rc æ rz m s m BUZ32 e œ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS I TYPE •B U Z 3 2 . . . V dss R DS on| 200 V 0 . 4 £2 I Id 11 A AVALANCHE RUG G EDNESS TECHNO LO G Y 100% AVALANC HE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF BUZ32 buz32

    buz32

    Abstract: No abstract text available
    Text: , '~ 7 SCS-THOMSON \ A '# RfflD g^ i[L[lCT©liMD©i_ BUZ32 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss ^ D S (o n BUZ32 200 V 0.4 n Id 9 .5 A • 200 VOLTS FOR TELECOMS APPLICATIONS • HIGH CURRENT - FOR PULSED LASER DRIVES


    OCR Scan     		PDF BUZ32 BUZ32

    buz11

    Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
    Text: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12


    OCR Scan     		PDF T0-204 O-205 O-218 O-220 RFM15N05 RFM25N05 RFK45N05 RFL2N05 RFH45N05 RFP4N05 buz11 BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N

    irf9110

    Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034
    Text: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) *typ V g s ( 0 ) (V) *typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB


    OCR Scan     		PDF 1RF9Z32 O-220AB 1RF48 IRF034 BUZ171 O-220ftB irf120 to-204aa irf9110 SOT-123 IRF224 irf113 BUZ10 BUZ63 IRF9122 irfl33

    BUZ171

    Abstract: TO-236-AA buz90 BUZ80A BUZ84A BUZ10 BUZ11 buzh F133 251C
    Text: - 272 - f m % *± m * Vd s or £ t V £ Vg s Vd g V (V) %i fê (Ta=25,C ) ÎD Pd * /CH * /CH (A) (W) (nA) Vg s th) Id s s ÎGSS Vg s (V) (UA) Vd s (V) min max (V) (V) % 14 (Ta=25,C ) b(on) Ciss gfs Vg s (V) (Q> Id (A) Vg s (V) *typ (A) *typ (S) 3.0 1.0 6.0


    OCR Scan     		PDF BSI07A O-226kk BS170 O-226AA BSS123 O-236AA O-220AB BUZ171 O-220ftB irf120 TO-236-AA buz90 BUZ80A BUZ84A BUZ10 BUZ11 buzh F133 251C

    2N6155

    Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
    Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS


    OCR Scan     		PDF SSS6N60 O-220 8SS89 BSS92 8SS100 O-220AB BUZ171 O-220ftB irf120 to-204aa 2N6155 BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BUZ64

    BUZ171

    Abstract: 8UZ11 SILICONIX t02G BUZ10 BUP67 BUP68 BUP69 BUP70 BUP71
    Text: - 318 - f * A Vd s m £ tt ft Vg s %l ts Ta=25*C Id Pd Vg s (th) Id s s I g ss or € % m 4# tos(on) Vp:>= 14 (Ta=25<C ) Ip(on) Ciss g fs Coss Vd g * /CH * /CH (V) (A) (IV) V g s =0 (max) max min (nA) 500 ± 4 0 ±4 . 47 100 ±100 ±30 1000 500 3 6 1 2 10


    OCR Scan     		PDF BUP67 O-204AA BUP68 T0-204AA BUP69 O-220AB BUZ171 O-220ftB irf120 to-204aa 8UZ11 SILICONIX t02G BUZ10 BUP70 BUP71

    IRF740 smd

    Abstract: tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1
    Text: ^ 7# SGS-THOMSON AUTOMOTIVE POWER TRANSISTORS MOSFET TRANSISTORS FOR AUTOMOTIVE APPLICATIONS Continued V(BR) DSS (V) r DS (on) max (Q]l 80 80 80 80 80 80 80 80 80 80 80 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 0.36


    OCR Scan     		PDF IRF523 IRF523FI IRF521 IRF521FI IRF533 IRF533FI IRF531 IRF531FI IRF543 IRF543FI IRF740 smd tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1