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    Abstract: No abstract text available
    Text: N AMER PH IL IP S/D ISCRET E DbE D PowerMOS transistor • ” bbSBTBl 0D14451 4 ■ BUZ32 ^_ j May 1987 GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		0D14451 BUZ32 BUZ32_ bbS3T31 0Q14H55- T-39-11 001445b bb53T31 PDF