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    Harris Semiconductor RFL2N05

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    RCA RFL2N05

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    RFL2N05 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFL2N05 Intersil 2A, 50V and 60V, 0.95 ?, N-Channel Power MOSFETs Original PDF
    RFL2N05 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V, Scan PDF
    RFL2N05 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFL2N05 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
    RFL2N05 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFL2N05 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFL2N05L General Electric N-channel logic level power field-effect transistor (LL FET). 50V, 2A. Scan PDF
    RFL2N05L Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFL2N05L Unknown Shortform Datasheet & Cross References Data Short Form PDF

    RFL2N05 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RFL2N06

    Abstract: rfl2n05 AN7254 TB334
    Text: RFL2N05, RFL2N06 Semiconductor 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2A, 50V and 60V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    Original     		PDF RFL2N05, RFL2N06 TA09378. AN7254 AN7260. RFL2N06 rfl2n05 TB334

    Untitled

    Abstract: No abstract text available
    Text: RFL2N05, RFL2N06 S E M I C O N D U C T O R 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2A, 50V and 60V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    Original     		PDF RFL2N05, RFL2N06 TA09378. TB334 095mA 75VDSS 50VDSS 25VDSS

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    TA9520

    Abstract: No abstract text available
    Text: RFL2N05L, RFL2N06L HARRIS S E M I C O N D U C T O R 2A, 50V and 60V, 0.95 Ohm, Logic Level, N-Channel Power MOSFETs July 1998 Description Features 2A, 50V and 60V Com patible with Autom otive Drive Requirements The RFL2N05L and RFL2N06L are N-channel enhancement


    OCR Scan     		PDF RFL2N05L, RFL2N06L RFL2N05L RFL2N06L TA9520. 0-95i2 AN7254 AN7260. TA9520

    Untitled

    Abstract: No abstract text available
    Text: RFL2N05, RFL2N06 HARRIS S E M I C O N D U C T O R 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2A, 50V and 60V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		PDF RFL2N05, RFL2N06 TA09378. AN7254 AN7260.

    Untitled

    Abstract: No abstract text available
    Text: RFL2N05 RFL2N06 S H a rris N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Features Package • 2A, 50V and 60V T O -2 0 5 A F • RDS on = 0 .9 5 ft • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		PDF RFL2N05 RFL2N06 RFL2N06

    Untitled

    Abstract: No abstract text available
    Text: RFL2N05, RFL2N06 fÇ j HARRIS S E M I C O N D U C T O R 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2A, 50V and 60V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		PDF RFL2N05, RFL2N06 TA09378. 0-95i2 AN7254 AN7260.

    RFL2N05L

    Abstract: TA9520 RFL2N06L RFP4N05L RFP4N06L rfl2n06 FM09 92CS-33T4
    Text: 3875081 G E' S O L I D STATECI Logic-Level Power MOSFETs DE | 3 Û 7 5 D Û 1 E I di T -3 7 -0 ? _ RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L F ile N u m b e r 1560 Power Logic Level MOSFETs T E R M IN A L D IA G R A M


    OCR Scan     		PDF lfl43b T-37-0" RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L 92CS-33T4) RFL2N05L RFL2N06L S2CS-38I73 TA9520 RFP4N05L RFP4N06L rfl2n06 FM09 92CS-33T4

    2N06

    Abstract: RFL2N05 RFL2N06 RFP4N05 RFP4N06
    Text: Standard Power M O S F E T s - RFL2N05, RFL2N06, RFP4N05, RFP4N06 File N u m be r 1497 N-Channel Enhancement-Mode Power Field-Effect Transistors 2 and 4 Amperes, 50 V - 60 V ro s o n = 0.60 and 0.750 Features: • SOA is power-dissipation limited


    OCR Scan     		PDF RFL2N05, RFL2N06, RFP4N05, RFP4N06 92CS-3374I RFL2N05 RFL2N06 RFP4N05 RFP4N06* 92CS-Ã 2N06 RFP4N06

    RFL2N05L

    Abstract: No abstract text available
    Text: h a r r RFL2N05L RFL2N06L i s A u g u st 1991 N -Channel Logic Level Power Field-Effect Transistors L2 FET Package Features • 2A, 50V and 60V T O -2 Û 5 A F B O TTO M VIEW • rDS(ON) = 0.95ÎÎ • Design Optimized for 5V Gate Drives GATE SOURCE • Can be Driven Directly from QMOS, NMOS, T T L Circuits


    OCR Scan     		PDF RFL2N05L RFL2N06L RFL2N05L, AN7254 AN-7260.

    2C337

    Abstract: 92C5-37555 RFL2N05 RFL2N06 RFP4N05 RFP4N06
    Text: 01 3fl750fll 0010113 □ 3 8 7 5 0 8 1 G E S O L ID STATE Standard Power MOSFETs - 01E 18113 RFL2N05, RFL2N06, RFP4N05, RFP4N06 File Number 1497 N-Channel Enhancement-Mode Power Field-Effect Transistors 2 and 4 Amperes, 50 V - 60 V rDs on = 0.60 and 0.750


    OCR Scan     		PDF 3fl750fll RFL2N05, RFL2N06, RFP4N05, RFP4N06 9ZCS-33741 RFL2N05 RFL2N06 RFP4N05 RFP4N06* 2C337 92C5-37555

    RFL2N05L

    Abstract: RFL2N06L RFP4N05L RFP4N06L TA9520
    Text: Logic-Level Power MOSFETs RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L File N u m be r 1560 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINALDIAGRAM 2 and 4 A, 50 V — 60 V rDs(on): 0.6 0 and 0.750 Features: • ■


    OCR Scan     		PDF RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L RFL2N05L RFL2N06L RFP4N05L RFP4N06L* RFP4N06L TA9520

    buz11

    Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
    Text: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12


    OCR Scan     		PDF T0-204 O-205 O-218 O-220 RFM15N05 RFM25N05 RFK45N05 RFL2N05 RFH45N05 RFP4N05 buz11 BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    field-effect transistors

    Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
    Text: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .


    OCR Scan     		PDF 2N6901 2N6902 2N6903 2N6904 RFL1N08L, RFL1N10L RFL1N12L, RFL1N15L RFL1N18L, RFL1N20L field-effect transistors 05LSM RFP8N18L RFP25N06L transistors field-effect transistor RFP14N05L M 615 transistor transistor 684

    2N06

    Abstract: No abstract text available
    Text: 2 3 H a r r i s F L 2 N 0 5 R F L 2 N 0 6 N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u s t 1991 Features • R Package 2A, 50V and 60V T O -20 5 A F • RDS on = 0 .9 5 n • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds


    OCR Scan     		PDF RFL2N05 RFL2N06 gate-drlv60 92CS-37I04 2N06

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719

    2N6901

    Abstract: 2N6903 THOMSON DISTRIBUTOR RFL1N10L RFL2N05L RFM15N05L 2n6902 RFD14N05LSM RFD16N05L RFP14N05L
    Text: _ THOMSON/ 5SE D DISTRIBUTOR • TDEtifi73 0G0S713 TCS< 4EB Power MOSFETs Logic Level - L2FETs — N-Channel Types N. Package Q Maximum Ratings BVpsS V >d s (A) 'DS(ON) O HMS e AS (mj) 50 2 4 15 14 16 25 50 0.75 0.60 0.14 0.100 0.047 0.047 0.22*


    OCR Scan     		PDF 0G0S713 O-204 O-205 O-220 O-251 O-252 O-247 RFL2N05L RFM15N05L RFP4N05L 2N6901 2N6903 THOMSON DISTRIBUTOR RFL1N10L 2n6902 RFD14N05LSM RFD16N05L RFP14N05L

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40