Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 2SE D • btS3T31 0022317 7 ■ Glass-passivated double-diffused rectifier diodes in TO-220 plastic envelopes, intended for power rectifier applications. The series consists of the following types: Normal polarity cathode to base plate : BY249—300 and BY249—600.
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btS3T31
O-220
BY249â
O-220AC
bbS3T31
QQ5H331
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BSS51
Abstract: BSS50 BSS52 BSS60 BSS61 BSS62
Text: bTE D N AMER PHILIPS/DISCRETE • btS3T31 D027flSh 553 ■ APX BSS50 to 52 A N-P-N DARLINGTON TRANSISTORS Silicon planar transistors in TO-39 metal envelopes, intended for industrial switching applications e.g. print hammer, solenoid, relay and lamp driving.
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002705b
BSS50
BSS60,
BSS61
BSS62.
BSS51
BSS52
BSS50;
BSS52
BSS60
BSS62
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BLV37
Abstract: ferroxcube wideband hf choke 4312 020 36642 B34 transistor
Text: I I N AUER PHILIPS/DISCRETE b^E T> m btS3T31 □□STD2S 7TÛ BLV37 IAPX A VHF PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar e p ita xia l tran sisto r p rim a rily intended fo r use in V H F broadcast tran sm itte rs. Features • • • In te rn a lly m atched in p u t fo r w ideband ope ra tio n and high p ow er gain
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BLV37
OT179
BLV37
ferroxcube wideband hf choke
4312 020 36642
B34 transistor
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Untitled
Abstract: No abstract text available
Text: btS3T31 00237t,S Tib • APX N AUER PHILIPS/DISCRETE b7E D« N-channel enhancement mode vertical D>MOS transistor Philips Semiconductors FEATURES Product specification BSN20 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching
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btS3T31
00237t
BSN20
MRA783
MRA782
D237bfl
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1N3913
Abstract: thyristor 507 1N3909 1N3910 1N3911 1N3912
Text: N AMER PHILIP S/D ISCRETE TOD D btS3T31 G010S40 S 1N3909 to 1N3913 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO—5 metal envelopes, featuring non-snap-off characteristics. They are intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications.
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bbS3T31
G010S40
1N3909
1N3913
1N3910
1N3911
1N3912
1N3913.
1N3913
thyristor 507
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PDF
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BC550
Abstract: BC549 BC550 equivalent BC550C Amplifier with transistor bc549 bc550 noise figure bc549 equivalent TBC549 BC550C equivalent bub49
Text: N AMER PHILIPS/DISCRETE b^E » • btS3T31 G0575bb 7ST * A P X A B U b4y BC550 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, prim arily intended fo r low-noise input stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.
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QDE75bb
BUb49
BC550
BC549
0D27573
bbS3T31
002757M
BC550
BC550 equivalent
BC550C
Amplifier with transistor bc549
bc550 noise figure
bc549 equivalent
TBC549
BC550C equivalent
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PDF
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BFR65
Abstract: BFQ34 multi-emitter transistor n 431 transistor Transistor PJ 431
Text: N AMER PHILIPS/DISCRETE 2SE » • btS3T31 GG1ÔQQS 1 BFQ34 is recommended for new design y \ I BFR65 T - S 3 - 0 S - N-P-N H.F. WIDEBAND TRANSISTOR N-P-N multi-emitter silicon transistor in a capstan envelope. The transistor has extremely good intermoduiation properties and high power gain.
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BFQ34
btS3T31
BFR65
BFR65
multi-emitter transistor
n 431 transistor
Transistor PJ 431
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transistor 2TH
Abstract: RX2731B90W
Text: AMER P H I L I P S / D I S C R E T E ObE D btS3T31 D G l S n S D E V E L O P M E N T DA I A t • RX2731B90W T h is data sheet c o n ta in s advance in fo rm a tio n and sp e cific atio n s are subject t o c hange w it h o u t notice. T-33-IS- PU LSED M IC R O W A V E POW ER T R A N SIST O R
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btS3T31
RX2731B90W
T-33-IS-
bfa53131
X-33-/S
transistor 2TH
RX2731B90W
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE n r •' btS3T31 Q017257•1 ■ * 2SE D BSJ174 TO 177 T - 3 7 -3 5 " J P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical P-channel junction FETs in a plastic TO-92 envelope and intended for application with anarog switches, choppers, commutators etc.
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btS3T31
Q017257â
BSJ174
BSJ175
BSJ176
BSJ177
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE sse bbS3T3i aaiam? a • d OM337 OM337A A T -iq -o ^-o i HYBRID V.H.F./U.H.F. WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in the hybrid technique, designed for use in M A T V systems, and as general purpose amplifier for v.h.f. and u.h.f. applications requiring a high output level.
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OM337
OM337A
DIN45004,
OM337
OM337A.
bb53131
T-74-09-0T
hbS3731
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Untitled
Abstract: No abstract text available
Text: I N AUER PHILIPS/DISCRETE bb53*131 □ 02*1732 T13 BLY92C b*!E D IAPX A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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BLY92C
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors tb53^31 0031b73 3=n APX Product specification NPN 4 GHz wideband transistor — — BFQ136 N AUER PHILIPS/DISCRETE b^E ]> PINNING DESCRIPTION NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. Ail leads are isolated
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0031b73
BFQ136
OT122A
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PDF
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philips hybrid amplifier modules
Abstract: BGY584 BGY585 DIN45004B vq 123
Text: Philips Semiconductors bbS3T31 0D32357 Tb4 CATV amplifier modules — ^ APER PHILIPS/DISCRETE PIN • Excellent linearity DESCRIPTION • Extrem ely low noise 1 input • Silicon nitride passivation 2 comm on • Rugged construction 3 comm on • Optimal reliability ensured by
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BGY584;
BGY585
BGY584
BGY585
PINNING-SOT115C
btS3T31
0G323CH
BGY584
philips hybrid amplifier modules
DIN45004B
vq 123
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PDF
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transistor BUZ10
Abstract: K 3911 BUZ10 transistor k 3911 D143 T0220AB
Text: N AMER PHILIPS/DISCRETE PowerMOS transistor □LE D • bbS3T31 0014301 B U Z 10 ■ “T — 3 7 — 11 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ10
T0220AB;
mountin40
Liki53
00143flb
T-39-11
BUZ10
btS3ti31
7Z211S7
transistor BUZ10
K 3911
transistor k 3911
D143
T0220AB
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Untitled
Abstract: No abstract text available
Text: DEVELOPMENT DATA BYV74F SERIES This data sheet contains advance information and specifications are subject to change w ithout notice. N AMER PHILIPS/DISCRETE 2SE D 0022L41 5 • ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES — 0 2 -1 * }
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BYV74F
0022L41
OT-199
T-03-19
bYV74h
bb53T31
0D22b50
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PDF
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TB531
Abstract: m1573 BYW92 BYW92-50
Text: N AMER P H IL IP S /D IS C R E T E 5SE D • ^53= 131 0U 2577S II MAINTENANCE TYPE y 4 ■ BYW92 SERIES y r - o s - i^ ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low
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002577S
ABYW92
BYW92â
M1246
bti53cÃ
BYW92
T-03-19
M1578
bbS3131
TB531
m1573
BYW92-50
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TIP31AF
Abstract: TIP31BF TIP31CF TIP31DF TIP31F TIP32BF TIP32DF TIP32F
Text: TIP32F; 32AF TIP32BF; 32CF TIP32DF SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SOT186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed
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TIP32F;
TIP32BF;
TIP32DF
OT186
TIP31F,
TIP31AF,
TIP31BF,
TIP31CF
TIP31DF.
TIP32F
TIP31AF
TIP31BF
TIP31DF
TIP31F
TIP32BF
TIP32DF
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PDF
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BUZ348
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE PowerMOS transistor D • tab S 3 e]31 0014730 BUZ348 . T - 3 < M " 3 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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001M73Ã
BUZ348
T0218AA;
T-39-13
BUZ348
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PDF
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BYV60
Abstract: M1049
Text: N AMER PHILIPS/DISCRETE _LL TdF T bbS3T31 001.03^4 T BYV60 SERIES FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in TO-238 envelope, featuring fast reverse recovery times w ith soft recovery characteristics. They are prim arily intended fo r use in a.c. m otor control systems as an anti-parallel diode to switching
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bti53,
BYV60
O-238
BYV60â
M1049
M2213
M1049
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 5SE D bhS3cm □020570 ^ PowerMOS transistor Logic Level FET BUK542-60A BUK542-60B r - 3^-09 SYMBOL CO N-channel enhancem ent mode logic level field-effect power transistor in a plastic full-pack envelope. Th e device is intended for use in
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BUK542-60A
BUK542-60B
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PDF
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Untitled
Abstract: No abstract text available
Text: DEVELOPMENT DATA BYV133F SERIES This data sheet contains advance information and specifications are subject to change without notice. N AUER PHILIPS/DISCRETE 2SE D • bb53T31 QQ2270T 2 ■ SCHOTTKY-BARRIER ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Low-leakage, platinum-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes
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BYV133F
bb53T31
QQ2270T
OT-186
T-03-19
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SE D N AMER PHILIPS/DISCRETE bt.53131 0011721 4 • BDT42;A BDT42B;C T -3 3 -*/ SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in general output stages of amplifier circuits and switching applications. The TIP42 series is an equivalent type. P-N-P complements are
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BDT42
BDT42B
TIP42
BDT41
BDT42
BDT42A
b53T31
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PDF
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BUZ74A
Abstract: T0220AB BUZ-74A
Text: PowerMOS transistor N AMER PHILIPS/DISCR ETE BU Z74A ObE D ^53^31 0014S14 2 I May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding,
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BUZ74A
t-39-11
Lb53131
0D14520
T-39-1I
BUZ74A
T0220AB
BUZ-74A
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PDF
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BY329
Abstract: M1004 M1006 BY329-800 M1002 M1004 j
Text: »• . 1 N AMER PHI LIP S/ DI SC R ET E SSE D • 13 353^31 0055331 1 ■ tJYc52y SbHlES A T -Q 3 -I7 FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. They are intended for use in chopper applications as well as in
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T-03-I7
BY329â
T-03-17
BY329
220fiFi
D8663
M1004
M1006
BY329-800
M1002
M1004 j
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