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    Text: N ANER PHILIPS/DISCRETE LTE D bbS3S31 DD30Mfl0 70b « A P X Product Specification Philips Semiconductors BUK437-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in


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    PDF bbS3S31 DD30Mfl0 BUK437-400B gat20 bb53T31 DQ30Mfl3