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    BUK437-400A

    Abstract: BUK437-400B
    Text: N AMER SSE P H IL IP S /D IS C R E T E D b 1=53^ 31 Q D S031D S BUK437-400A BUK437-400B PowerMOS transistor T -3 7 -/S T Q U IC K REFER ENC E DATA G EN ER A L D ESC R IPTIO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUK437 -400A -400B BUK437-400A BUK437-400B

    Untitled

    Abstract: No abstract text available
    Text: _ _-61C 01279 ’ Ò' ; ÌJ - / 0 t.1 DE |ñ3bñt,D5 aODlE?^ 0 ^ SOLITRON DEVICES INC olitron Devices, Inc. S P E C I F I C A T I O N S M A X IM U M R A T IN G S NO.: 2N3713 TYPE: NPN E P I BASE CASE: T O -3 . 80 V Voltage, Collector to Emitter V CE0


    OCR Scan     		PDF 2N3713 5031/S031D