BDT86 Search Results

BDT86 Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
BDT86	Philips Semiconductors	Silicon Power Transistors	Original	PDF
BDT86	Philips Semiconductors	Silicon Power Transistors	Original	PDF
BDT86	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BDT86	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BDT86	Philips Semiconductors	SILICON POWER TRANSISTORS	Scan	PDF
BDT86F	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BDT86F	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BDT86F	Philips Semiconductors	SILICON EPITAXIAL POWER TRANSISTORS	Scan	PDF

BDT86 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BDT88F Abstract: BDT82F BDT84F BDT86F Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT82F/84F/86F/88F DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= -5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F	Original	BDT82F/84F/86F/88F BDT82F; BDT84F; -100V BDT86F; -120V BDT88F BDT81F/83F/85F/87F BDT82F BDT88F BDT82F BDT84F BDT86F	PDF
BDT86 equivalent Abstract: BDT88 BDT84 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 BDT82 Transistor Text: PNP BDT82 – BDT84 – BDT86 – BDT88 NPN BDT81 – BDT83 – BDT85 – BDT87 SILICON POWER TRANSISTOR The BDT82 – BDT84 – BDT86 – BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications.	Original	BDT82 BDT84 BDT86 BDT88 BDT81 BDT83 BDT85 BDT87 BDT86 equivalent BDT88 BDT84 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 BDT82 Transistor	PDF
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046	PDF
DK53 Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513 Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513	PDF
TRANSISTOR DATASHEET D1555 Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878 Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440	Original	2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878	PDF
2SD556 sanken Abstract: SDT9207 SM2176 2sd556 KT819G SDT9202 Bd184 SDT9803 KT818G 2N3055-7 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CE Of) PD Max toN Max (A) (s) ICBO Max hFE »T ON) Min (Hz) r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . . 5 . . . .10 . . . .15	Original	BDW41 BDW46 BDT53 SM2176 SM2183 BD909 BD910 SDT9803 2SD556 sanken SDT9207 2sd556 KT819G SDT9202 Bd184 KT818G 2N3055-7	PDF
MAX2136 Abstract: t331t BDT81F BDT82F BDT83F BDT84F BDT86F BDT87F BDT88F Text: BDT81F; BDT83F BDT85F; BDT87F PHILIPS international SbE D • VLlOflEh 0 Q 4 3 3 1 S LS'i ■ PHIN SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. PNP complements are BDT82F, BDT84F, BDT86F and BDT88F.	OCR Scan	BDT81F; BDT83F BPT85F; BDT87F 0D4331S OT186 BDT82F, BDT84F, BDT86F BDT88F. MAX2136 t331t BDT81F BDT82F BDT83F BDT84F BDT87F BDT88F	PDF
BDT88 Abstract: BDT81 BDT82 BDT83 BDT84 BDT85 BDT86 BDT87 Text: N AMER PHILIPS/DISCRETE S5E D • ^53=131 OOlTäS.S “J ■ Jl ‘' BDT82; BDT84 BDT86; BDT88 T - 3 3 - 2 3 SILICON POWER TRANSISTORS P-N-P ep itaxial base transistors in a T 0 - 2 2 0 plastic envelope, designed fo r use in audio o u tp u t stages and general a m p lifie r and switching applications.	OCR Scan	fahS31il BDT82; BDT84 BDT86; BDT88 T0-220 BDT81, BDT83, BDT85 BDT87. BDT88 BDT81 BDT82 BDT83 BDT86 BDT87	PDF
BDT84 Abstract: BDT88 tcj 103 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 MSA060 Text: BDT82; BDT84 BDT86; BDT88 SILICON POW ER T R A N SIST O R S P-N-P epitaxial base transistors in a TCJ-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications. N-P-N complements are B D T 8 1, B D T 8 3, B D T 8 5 and BD T87.	OCR Scan	BDT82; BDT84 BDT86; BDT88 TCJ-220 BDT81, BDT83, BDT85 BDT87. BDT82 BDT88 tcj 103 BDT81 BDT82 BDT83 BDT86 BDT87 MSA060	PDF
BDT81F Abstract: BDT82F BDT83F BDT84F BDT85F BDT86F BDT87F BDT88F MAX2136 Text: BDT82F; BDT84F BDT86F; BDT88F PHILIPS INTERNATIONAL 5 bE D • 711002b 0043320 725 H I P H I N T -37-11 SILICON EPITAXIAL POWER TRANSISTORS PIMP silicon epitaxial power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base.	OCR Scan	BDT82F; BDT84F BDT86F; BDT88F 711002b T-33-/? OT186 BDT81F, BDT83F, BDT85F BDT81F BDT82F BDT83F BDT86F BDT87F BDT88F MAX2136	PDF
Untitled Abstract: No abstract text available Text: BDT81F; BDT83F l^BDT85F; BDT87F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T 186 envelope with an electrically insulated mounting base. PNP complements are BDT82F, BDT84F, BDT86F and BDT88F. Q U IC K R E F E R E N C E D A T A	OCR Scan	BDT81F; BDT83F BDT85F; BDT87F BDT82F, BDT84F, BDT86F BDT88F. BDT81F bb53T31	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE 2SE D • 1^53=131 OOlTfiSS T ■ BDT82; BDT84 BDT86; BDT88 A T - 33-23 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a TO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.	OCR Scan	BDT82; BDT84 BDT86; BDT88 O-220 BDT81, BDT83, BDT85 BDT87.	PDF
BDT88F Abstract: 36 TI BBL BDT86 Text: BDT82F; BDT84F BDT86F; BDT88F PHILIPS INTERNATIONAL 5bE » • 711üfl2b D D M 3 3 2 Q 72S ■ PH IN T— SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BDT81F, BDT83F, BD T85F and BDT87F.	OCR Scan	BDT82F; BDT84F BDT86F; BDT88F OT186 BDT81F, BDT83F, BDT87F. BDT82F OT186. BDT88F 36 TI BBL BDT86	PDF
3m421 Abstract: "Silicon Power Transistors" T8480 Text: BDT82; BDT84 BDT86; BDT88 PHILIPS INTERNATIONAL SbE D • TllDflEb D D M 3 3 m 421 H P H I N T -31-Z 3 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a T 0 -2 2 0 plastic envelope, designed fo r use in audio output stages and general am plifier and switching applications.	OCR Scan	BDT82; BDT84 BDT86; BDT88 -31-Z maxZ92354 3m421 "Silicon Power Transistors" T8480	PDF

BDT88 Abstract: BDT81 BDT82 BDT83 BDT84 BDT85 BDT86 BDT87 Text: BDT82; BDT84 BDT86; BDT88 PHILIPS INTERNATIONAL SbE D • 711Qfl2b 0043314 421 ■ PHIN T -3 1 -2 3 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a T 0-22 0 plastic envelope, designed fo r use in audio o u tp u t stages and general am plifier and switching applications.	OCR Scan	BDT82; BDT84 BDT86; BDT88 T-31-23 T0-220 BDT81, BDT83, BDT85 BDT87. BDT88 BDT81 BDT82 BDT83 BDT86 BDT87	PDF
Untitled Abstract: No abstract text available Text: BDT81; BDT83 BDT85; BDT87 _ y v SILICON POWER TRANSISTORS N-P-N epitaxial base transistors in aTO-220 plastic envelope, designed fo r use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT82, BDT84, BDT86 and BDT88.	OCR Scan	BDT81; BDT83 BDT85; BDT87 aTO-220 BDT82, BDT84, BDT86 BDT88. BDT81	PDF
Untitled Abstract: No abstract text available Text: BDT82; BDT84 BDT86; BDT88 _ y v SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a TO-220 plastic envelope, designed for use in audio output stages and general am plifier and switching applications. N-P-N complements are BD T81, BD T83, B D T 85 and BDT87.	OCR Scan	BDT82; BDT84 BDT86; BDT88 O-220 BDT87. BDT86 00347b2	PDF
AC188 Abstract: 2SA1309 2N2907A-PL 2SA1273 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Tp aH 3M C T O pb l PNP copTMpoBKa no HanpflweHMro Kofl: BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 BC558B BC559C BC858B BC858C BF324 2SA1357 2SA1431 2N2905A 2N2907A	OCR Scan	BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 2N2907A-PL 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD	PDF
BPW22A Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey	OCR Scan	BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8	PDF
BDT84 Abstract: PHILIPS 1N BDT88 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 10-J11 Text: BDT81; BDT83 BDT85; BDT87 PHILIPS INT ERN ATI ON AL SLE T> m 7110â2b 00H330b 355 • PHIN SILICON PO W ER TRANSISTO RS N-P-N epitaxial base transistors in aTO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.	OCR Scan	BDT81; BDT83 BDT85; BDT87 00H330b aTO-220 BDT82, BDT84, BDT86 BDT88. BDT84 PHILIPS 1N BDT88 BDT81 BDT82 BDT85 BDT87 10-J11	PDF
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350	PDF
BDT88 Abstract: No abstract text available Text: BDT81; BDT83 BDT85; BDT87 PHILIPS INTERNATIONAL SbE T> m 2 7 1 1 0 0 2 b 0 0 4 3 3 0 b 3SS « P H I N SILICON POW ER TRAN SISTO RS N-P-N epitaxial base transistors in aTO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.	OCR Scan	BDT81; BDT83 BDT85; BDT87 aTO-220 BDT82, BDT84, BDT86 BDT88. BDT81 BDT88	PDF
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc	PDF
FET BFW10 Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI	OCR Scan	BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11	PDF

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BDT86 Search Results

BDT86 Datasheets (8)

BDT86 Datasheets Context Search

BDT88F

BDT86 equivalent

BUV48I

DK53

TRANSISTOR DATASHEET D1555

2SD556 sanken

MAX2136

BDT88

BDT84

BDT81F

Untitled

Untitled

BDT88F

3m421

BDT88

Untitled

Untitled

AC188

BPW22A

BDT84

transistor f6 13003

BDT88

BGY41

FET BFW10