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    BDT83 Price and Stock

    Dremel BDT832

    BOSCH 8-32 TAP NO 29 DRILL COMBO
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    DigiKey BDT832 Bulk 1 1
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    • 100 $7.09
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    BDT83 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDT83 Philips Semiconductors Silicon Power Transistors Original PDF
    BDT83 Magnatec NPN Epitaxial Base Transistors in a TO-220 Plastic Package Scan PDF
    BDT83 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDT83 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT83 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT83 Philips Semiconductors SILICON POWER TRANSISTORS Scan PDF
    BDT83F Philips Semiconductors Silicon Epitaxial Power Transistors Original PDF
    BDT83F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT83F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT83F Philips Semiconductors SILICON EPITAXIAL POWER TRANSISTORS Scan PDF

    BDT83 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDT87F

    Abstract: NPN Transistor VCEO 80V 100V transistor 83F BDT81F BDT83F BDT85F TC2536
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT81F/83F/85F/87F DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F


    Original     		PDF BDT81F/83F/85F/87F BDT81F; BDT83F; BDT85F; BDT87F BDT82F/84F/86F/88F BDT81F BDT83F BDT87F NPN Transistor VCEO 80V 100V transistor 83F BDT81F BDT83F BDT85F TC2536

    BDT85

    Abstract: BDT87 BDT81 BDT82 NPN Transistor VCEO 80V 100V BDT83
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT81/83/85/87 DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87


    Original     		PDF BDT81/83/85/87 BDT81; BDT83; BDT85; BDT87 BDT82/84/86/88 BDT81 BDT83 BDT85 BDT87 BDT81 BDT82 NPN Transistor VCEO 80V 100V BDT83

    BDT86 equivalent

    Abstract: BDT88 BDT84 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 BDT82 Transistor
    Text: PNP BDT82 – BDT84 – BDT86 – BDT88 NPN BDT81 – BDT83 – BDT85 – BDT87 SILICON POWER TRANSISTOR The BDT82 – BDT84 – BDT86 – BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications.


    Original     		PDF BDT82 BDT84 BDT86 BDT88 BDT81 BDT83 BDT85 BDT87 BDT86 equivalent BDT88 BDT84 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 BDT82 Transistor

    2SD556 sanken

    Abstract: SDT9207 SM2176 2sd556 KT819G SDT9202 Bd184 SDT9803 KT818G 2N3055-7
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CE Of) PD Max toN Max (A) (s) ICBO Max hFE »T ON) Min (Hz) r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . . 5 . . . .10 . . . .15


    Original     		PDF BDW41 BDW46 BDT53 SM2176 SM2183 BD909 BD910 SDT9803 2SD556 sanken SDT9207 2sd556 KT819G SDT9202 Bd184 KT818G 2N3055-7

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


    Original     		PDF 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020

    MAX2136

    Abstract: t331t BDT81F BDT82F BDT83F BDT84F BDT86F BDT87F BDT88F
    Text: BDT81F; BDT83F BDT85F; BDT87F PHILIPS international SbE D • VLlOflEh 0 Q 4 3 3 1 S LS'i ■ PHIN SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. PNP complements are BDT82F, BDT84F, BDT86F and BDT88F.


    OCR Scan     		PDF BDT81F; BDT83F BPT85F; BDT87F 0D4331S OT186 BDT82F, BDT84F, BDT86F BDT88F. MAX2136 t331t BDT81F BDT82F BDT83F BDT84F BDT87F BDT88F

    SOT87

    Abstract: BDT86 BDT88 BDT81 BDT82 BDT83 BDT84 BDT85 BDT87 l82a
    Text: / MAGNA BDT81; BDT83 BDT85; BDT87 SILICON POWER TRANSISTORS N-P-N epitaxial base transistors in a T O -2 2 0 plastic envelope, designed for use in audio output stages and generai am plifier and switching applications. P-N-P complements are B D T 8 2 , B D T 84, B D T86 and BD T88.


    OCR Scan     		PDF BDT81; BDT83 BDT85; BDT87 aTO-220 BDT82, BDT84, BDT86 BDT88. 13H3S SOT87 BDT88 BDT81 BDT82 BDT84 BDT85 BDT87 l82a

    BDT84

    Abstract: PHILIPS 1N BDT88 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 10-J11
    Text: BDT81; BDT83 BDT85; BDT87 PHILIPS INT ERN ATI ON AL SLE T> m 7110â2b 00H330b 355 • PHIN SILICON PO W ER TRANSISTO RS N-P-N epitaxial base transistors in aTO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT81; BDT83 BDT85; BDT87 00H330b aTO-220 BDT82, BDT84, BDT86 BDT88. BDT84 PHILIPS 1N BDT88 BDT81 BDT82 BDT85 BDT87 10-J11

    Untitled

    Abstract: No abstract text available
    Text: BDT81F; BDT83F l^BDT85F; BDT87F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T 186 envelope with an electrically insulated mounting base. PNP complements are BDT82F, BDT84F, BDT86F and BDT88F. Q U IC K R E F E R E N C E D A T A


    OCR Scan     		PDF BDT81F; BDT83F BDT85F; BDT87F BDT82F, BDT84F, BDT86F BDT88F. BDT81F bb53T31

    BDT88F

    Abstract: 36 TI BBL BDT86
    Text: BDT82F; BDT84F BDT86F; BDT88F PHILIPS INTERNATIONAL 5bE » • 711üfl2b D D M 3 3 2 Q 72S ■ PH IN T— SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BDT81F, BDT83F, BD T85F and BDT87F.


    OCR Scan     		PDF BDT82F; BDT84F BDT86F; BDT88F OT186 BDT81F, BDT83F, BDT87F. BDT82F OT186. BDT88F 36 TI BBL BDT86

    Untitled

    Abstract: No abstract text available
    Text: BDT81F; BDT83F BDT85F; BDT87F PHILIPS i n t e r n a t i o n a l 5 bE D • 7 1 1 0 fiSh G G 4 3 3 1 S bSi ■ PHIN SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base.


    OCR Scan     		PDF BDT81F; BDT83F BDT85F; BDT87F

    BDT88

    Abstract: No abstract text available
    Text: BDT81; BDT83 BDT85; BDT87 PHILIPS INTERNATIONAL SbE T> m 2 7 1 1 0 0 2 b 0 0 4 3 3 0 b 3SS « P H I N SILICON POW ER TRAN SISTO RS N-P-N epitaxial base transistors in aTO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT81; BDT83 BDT85; BDT87 aTO-220 BDT82, BDT84, BDT86 BDT88. BDT81 BDT88

    BDT85

    Abstract: BDT81 BDT88 BDT84 BDT87 BDT82 BDT83 BDT86
    Text: J BDT81; BDT83 BDT85; BDT87 ^ SILICON POWER TRANSISTORS N-P-N epitaxial base transistors in a T0-220 plastic envelope, designed fo r use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT82, BDT84, BDT86 and BDT88.


    OCR Scan     		PDF BDT81; BDT83 BDT85; BDT87 aTO-220 BDT82, BDT84, BDT86 BDT88. BDT81 BDT85 BDT81 BDT88 BDT84 BDT87 BDT82 BDT83

    Untitled

    Abstract: No abstract text available
    Text: BDT81; BDT83 BDT85; BDT87 _ y v SILICON POWER TRANSISTORS N-P-N epitaxial base transistors in aTO-220 plastic envelope, designed fo r use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT82, BDT84, BDT86 and BDT88.


    OCR Scan     		PDF BDT81; BDT83 BDT85; BDT87 aTO-220 BDT82, BDT84, BDT86 BDT88. BDT81

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 2SE D • 1^53=131 OOlTfiSS T ■ BDT82; BDT84 BDT86; BDT88 A T - 33-23 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a TO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT82; BDT84 BDT86; BDT88 O-220 BDT81, BDT83, BDT85 BDT87.

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    BDT88

    Abstract: BDT81 BDT82 BDT83 BDT84 BDT85 BDT86 BDT87
    Text: BDT82; BDT84 BDT86; BDT88 PHILIPS INTERNATIONAL SbE D • 711Qfl2b 0043314 421 ■ PHIN T -3 1 -2 3 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a T 0-22 0 plastic envelope, designed fo r use in audio o u tp u t stages and general am plifier and switching applications.


    OCR Scan     		PDF BDT82; BDT84 BDT86; BDT88 T-31-23 T0-220 BDT81, BDT83, BDT85 BDT87. BDT88 BDT81 BDT82 BDT83 BDT86 BDT87

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


    OCR Scan     		PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G