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    MSM511665-10

    Abstract: MSM511665-80
    Text: 5ÔE D O K I m b754240 0012^40 SEMICONDUCTOR 3^7 « O K I J GROUP O K I sem iconductor M SM 511665 z^s-H 65,536-W O R D x 16-BIT DYN A M IC RAM GENERAL DESCRIPTION The M SM511665 is a new generation dynamic RAM organized as 65,536 words x 16 bits. The technology used to fabricate the MSM511665 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF b724240 MSM511665 536-WORD 16-BIT MSM511665 W15/I015 Lj7BM240 MSM511665' VOH-W15/1015 MSM511665-10 MSM511665-80

    MAX184

    Abstract: MAX525 MSM27C256HZB
    Text: 5ÖE D • b754240 O K I O K I s e m GG1333b BbO H O K I J SEM ICONDUCTOR GROUP ic o n d u c to r - r - ^ / s - a s " MSM27C256HZB 32,768-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The MSM27C256HZB is a 32,768-word x 8-bit electrically programmable read-only memory.


    OCR Scan     		PDF 242M0 001333b MSM27C256HZB 768-Word MSM27C256HZB 28-pin 32-tead MAX184 MAX525

    Untitled

    Abstract: No abstract text available
    Text: 4bE 1 m b754240 0011635 445 H O K I J O K I semiconductor_ t-sz - i3-o r MSM6568 OKI SEMICONDUCTOR GROUP LCD Dot Matrix Common Driver TAB GENERAL DESCRIPTION The MSM6568 is a LCD dot matrix common driver of a CMOS 1C which consists of a 160-bit


    OCR Scan     		PDF b754240 MSM6568 MSM6568 160-bit FFMSM6549 MSM6568a

    MSM5116160

    Abstract: dq8e N4409
    Text: O K I Semiconductor MSM5116160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160 achieves high integration, high-speed operation, and low -pow er


    OCR Scan     		PDF MSM5116160 576-Word 16-Bit MSM5116160 42-pin 50/44-pin dq8e N4409

    transistor sl 431

    Abstract: ZIP40-P-475
    Text: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM51419 0 /SL is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM514190/SL_ 144-Word 18-Bit MSM514190/SL theMSM514190/SL cycles/16ms, transistor sl 431 ZIP40-P-475

    OCV CM 1092

    Abstract: SP 1191 MSM6576
    Text: O K I Semiconductor MSM6576-XX_ Operatable at 0.9V and 7-level Detector 4-Bit Microcontroller GENERAL DESCRIPTION M SM 6576 is a 4-bit, low -pow er m icrocontroller that is manufactured in a C M O S silicon-gate process. The m icrocontroller can be started and operated at a low supply voltage of 0.9 V.


    OCR Scan     		PDF MSM6576-XX_ MSM6576 L72424G 0G24G13 OCV CM 1092 SP 1191

    MSM64162-XXX

    Abstract: MSM64162 sis 496 Ml17
    Text: O K I Semiconductor M S M 6 4 1 6 2 _ Built-in RC Oscillator type A/D Converter and LCD Driver 4-Bit Microcontroller GENERAL DESCRIPTION The M SM 64162 is a low pow er 4-bit m icrocontroller using O K I original C P U core n X -4 /2 0 . The M SM 64162 has the m inim u m instruction execution tim e o f 7.5 |is @ 400 kH z and has


    OCR Scan     		PDF MSM64162_ MSM64162 nX-4/20. 2016-byte 128-nibble MSM64162 b7e4E40 MSM64162-XXX sis 496 Ml17

    active suspension

    Abstract: m56v16 m56v1640010
    Text: O K I Semiconductor MSM56V16400 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400 is a 2-bank x 2,097,152-w ord x 4-bit synchronous dynam ic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and


    OCR Scan     		PDF MSM56V16400_ 152-Word MSM56V16400 cycles/64 b7E424G DD2Q377 active suspension m56v16 m56v1640010

    MSM531021B

    Abstract: No abstract text available
    Text: O K I Semiconductor M SM 531021B 131,072-Word x 8-Bit Mask ROM DESCRIPTION i S ^ M 5310218 is a high-speed silicon gate CMOS Mask ROM with 131,072-word x 8-bit capacity. The MSM531021B operates on a single 5.0 V power supply and is TTL compatible. The chip's asynchro­


    OCR Scan     		PDF MSM531021B 072-Word MSM531021B

    MSM511000

    Abstract: ZIP20-P-400 msm511000h
    Text: O K I Semiconductor MSM5 1 1 0 0 0 H_ _ 1,048,576-W ord x 1-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E D ESCRIPTIO N The MSM511000H is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000H achieves high integration, high-speed operation, and low-power


    OCR Scan     		PDF MSM511000H_ 576-Word MSM511000H 18-pin 26/20-pin 20-pin MSM511000 ZIP20-P-400

    Piezo sounder

    Abstract: TONE/VOLUME CONTROL CIRCUIT MSM6895 MSM7502 MSM7502GS-BK MSM7543 RM01
    Text: O K I Semiconductor MSM7502 Multi-Function PCM CODEC G E N E R A L D E S C R IP T IO N The M SM 7502, developed especially for low -pow er and m ulti-function applications in touch­ tone telephone sets and digital telephone term inals o f digital PBXs, is a single +5 V pow er supply


    OCR Scan     		PDF MSM7502_ MSM7502, MSM7543 MSM7502 Piezo sounder TONE/VOLUME CONTROL CIRCUIT MSM6895 MSM7502GS-BK RM01

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM511001B 1,048,576-Word x 1-Bit DYNAMIC RAM : NIBBLE M ODE TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The


    OCR Scan     		PDF MSM511001B 576-Word MSM511001B R1001B D0177fiD

    A5 GNC

    Abstract: TSOP32-P-4QO-K 51V17400 5116100
    Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16190 576-Word 18-Bit MSM51V16190 cycles/64m A5 GNC TSOP32-P-4QO-K 51V17400 5116100

    m51171

    Abstract: No abstract text available
    Text: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.


    OCR Scan     		PDF MSM51V17180 576-Word 18-Bit MSM51V17180 cycles/32ms m51171

    Untitled

    Abstract: No abstract text available
    Text: O K I S E M I C O N D U C T O R GR O U P S3E D b 7 S 4 S M Q OOOTTfifl 1 T -41-07 84/im LED ¿iv*—T-i- -V ' .• . . ^ •>>;’ Sölili E804D/0E805D • DESCRIPTION The OE804D, OE805D are 840 nm AIGaAs Double Heterostructure LEDs developed as light sources'for fiber-optic communications.


    OCR Scan     		PDF 84/im E804D/0E805D OE804D, OE805D OE804D QE805D b754240 0E805D T-41-07

    fluorescent Display driver

    Abstract: No abstract text available
    Text: _ SÔE D • b 7 2 M E M G O O l M M b ô 74R H O K I J O K I Semiconauctor M S L 917 O K I SEMICONDUCTOR CROUP — f - S 2 - [$- 1 9 8-BIT PARALLEL-IN PARALLEL-OUT GENERAL DESCRIPTION Input may be driven directly by the TTL or CMOS. The vacuum fluorescent display tube


    OCR Scan     		PDF MSL917 MSL917 b754240 DD14471 fluorescent Display driver

    MSM5116180-70

    Abstract: MSM5116180-80
    Text: O K I Semiconductor MSM5116180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116180_ 576-Word 18-Bit MSM5116180 cycles/64ms MSM5116180-70 MSM5116180-80

    Bv 42 transistor

    Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
    Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16190 576-Word 18-Bit MSM51V16190 cycles/64ms Bv 42 transistor M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K

    001472

    Abstract: No abstract text available
    Text: Sfl E D • b7EMEM0 001M712 446 MOKIJ -S 2 / M 5 -Æ O K I MSC7125-XX ? SEMI CONDUCTOR GROUP 5 x 7 DOT MATRIX, 8-DIGIT GENERAL DESCRIPTION The MSC7125-xx is a Bi-CMOS dot matrix display controller for vacuum fluorescent display tube. The MSC7125-xx drives displays with up to


    OCR Scan     		PDF b7EME40 MSC7125-XX MSC7125-xx 16-bit SEG36-40 SEG1-35 001472

    cd 4069 pin data

    Abstract: 82C43 CI 4069 cjne MSM80C31F MSM80C31 MSM80C51F *82c43 80C31F
    Text: O K I SEMICONDUCTOR GROUP IDE D | t.754S4D Q003b78 7 | C 5 1 1 C .1 I s e m i c o n c a y c t o r M S M 8 0 C 3 1 F /M S M 8 0 C 5 1 F -t - w - h - p i - n '- * - * ! CMOS SINGLE-COMPONENT 8 -BIT MICROCONTROLLER GENERAL DESCRIPTION The OKI M SM 80C31F/M SM 80C51F m icrocontroller is a low power, high performance 8-bit single


    OCR Scan     		PDF Q003b78 -r-w-11-01 MSiVI80C31 F/MSM80C51F MSM80C31F/MSM80C51F MSM80C51F 16-bit cd 4069 pin data 82C43 CI 4069 cjne MSM80C31F MSM80C31 *82c43 80C31F

    32-PIN

    Abstract: A10E MSM51V16900-70 MSM51V16900-80
    Text: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16900_ 152-Word MSM51V16900 cycles/64ms 32PIN SOJ32-P-4QO 42PIN 32-PIN A10E MSM51V16900-70 MSM51V16900-80

    Bv 42 transistor

    Abstract: tsop50 42-PIN MSM5116190-70 MSM5116190-80
    Text: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116190 576-Word 18-Bit MSM5116190 cycles/64ms Bv 42 transistor tsop50 42-PIN MSM5116190-70 MSM5116190-80

    MSM6351

    Abstract: QFP100-P-1420-K SEG60 hz-02 IRQP20 OKI msm6351
    Text: 5ÔE D • b ? 2 4 2 4 G Q D 1 3 b ? E 044 « O K I J OKI semiconductor \-^9-13-^4 MSM6351 O K I S E M I C O N D U C T O R GROUP CMOS 4-BIT HIGH PERFORMANCE AND VERY LOW POWER SINGLE CHIP MICROCONTROLLER WITH LCD DRIVER GENERAL DESCRIPTION O K I’s M S M 6 3 5 1 is a low -pow er, h ig h -p erfo rm an ce sin gle-ch ip m icrocontroller em ploying silicon


    OCR Scan     		PDF b7E4240 MSM6351 QFP100-P-1420-K SEG60 hz-02 IRQP20 OKI msm6351

    dynamic ram binary cell

    Abstract: No abstract text available
    Text: O K I SEMICONDUCTOR GROUP AT ,6 7 ? 4 2 4 0 O K I O K I SEMICONDUCTOR GROUP 89D 0 2 7 4 6 D L724S40 0D0274L, 4 -c ? 3 '/7 semiconductor_ MSC2311YS8/KS8_ 1,048,576 BY 8 BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki M SC 2311Y S8/KS8 is a fu lly decoded, 1,048,576 words X 8 bit NMOS dynamic random


    OCR Scan     		PDF L724S40 0G027ML, MSC2311YS8/KS8 MSC2311YS8/KS8 MSM411000JS) MSM411000JS; dynamic ram binary cell