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    SC-1149

    Abstract: No abstract text available
    Text: 5ÛE D • b7E4240 0014S3Ô ^ 2 H0KIJ O K I Semiconductor M S C 1 1 4 9 -X X O K I -s z -\ s - 9 SEMICONDUCTOR 6R0UP 33-BIT SEGMENT DRIVER GENERAL DESCRIPTION The M SC 1149-XX is a vacuum fluorescent display tube driver IC, which consists of a 34-bit shift register, a 33-bit latch circuit the


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    33-BIT b7E4240 0014S3Ô 1149-XX 34-bit b72424G 0G1454Û MSC1149-XX SC-1149 PDF

    OCV CM 1092

    Abstract: SP 1191 MSM6576
    Text: O K I Semiconductor MSM6576-XX_ Operatable at 0.9V and 7-level Detector 4-Bit Microcontroller GENERAL DESCRIPTION M SM 6576 is a 4-bit, low -pow er m icrocontroller that is manufactured in a C M O S silicon-gate process. The m icrocontroller can be started and operated at a low supply voltage of 0.9 V.


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    MSM6576-XX_ MSM6576 L72424G 0G24G13 OCV CM 1092 SP 1191 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC23832A-XXBS16/DS16 8,388,608-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23832A-xxBS16/DS16 is a fully decoded 8,388,608-word x 32-bit CMOS Dynamic Random Access M emory M odule com posed of sixteen 16-Mb DRAMs 4M x 4 in SOJ packages


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    MSC23832A-XXBS16/PS16 608-Word 32-Bit MSC23832A-xxBSl6/DS16 16-Mb 72-pin PDF

    MSM5116400C

    Abstract: No abstract text available
    Text: E 2 G 0 1 06-18-42 V $ \ O K I S e m ic o n d u c to r ^ve^on^.i*«^ M SM 5 1 1 6 4 0 0 C_ 4,194,304-W ord x 4 -B it D Y N A M IC R A M : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS


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    E2G0106-18-42 MSM5116400C_ 304-Word MSM5116400C 26/24-pin PDF

    MSM53V1655F

    Abstract: TSOP70-P-400
    Text: O K I Semiconductor MSM53V1655F_ 524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM 4Double Words x 32-Bit or 8Words x 16-Bit/Page Mode MASKROM • DESCRIPTION The OKI MSM53V1655F is a 524,288-double words x 32-bit or 1,048,576-words x 16-bit


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    MSM53V1655F 288-Double 32-bit 576-Words 16-bit 16-Bit/Page MSM53V1655F TSOP70-P-400 PDF

    A5 GNC

    Abstract: TSOP32-P-4QO-K 51V17400 5116100
    Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.


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    MSM51V16190 576-Word 18-Bit MSM51V16190 cycles/64m A5 GNC TSOP32-P-4QO-K 51V17400 5116100 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM6389_ 1,048,576-WORD X 1-BIT SOLID STATE RECORDER DATA REGISTER GENERAL DESCRIPTION MSM6389 is a solid state recorder data regis­ ter in 1,048,576 words x 1 bit configuration. the direction of words is possible by an exter­


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    MSM6389_ 576-WORD MSM6389 18-pin MSM6389s 2424Q 0D17141 PDF

    Untitled

    Abstract: No abstract text available
    Text: OKI Sem iconductor MSM5416273 P relim inary 262,144 -Word x 16 Bits Multiport DRAM_ Rev.t.o GENERAL DESCRIPTION* The MSM5416273 is a 4-Mbit CMOS m ultiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-words by 16-bits SAM. Its RAM and SAM operate independently and


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    MSM5416273 MSM5416273 144-word 16-bit 512-words 16-bits 2424D b7E4240 PDF

    MSM80C154HJS

    Abstract: QFP44-P-910-V1K MSM80C154H p311t
    Text: SflE D O M K S I M • ^724240 OOlMOfll 5 5 ^ B i O K I J S e m ic o n d u c t o r 8 C 1 5 4 t S E „ IC0NIUCT0R H _- t - h w - o t CMOS 8-Bit Single*Chip Microcontroller DESCRIPTION The MSM80C154H is a high performance 8-bit single-chip microcontroller implementing large inte­


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    MSM80C154H 16-bit MSM80C1S4 MSM80C154 MSM80C154HJS QFP44-P-910-V1K p311t PDF

    Bv 42 transistor

    Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
    Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.


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    MSM51V16190 576-Word 18-Bit MSM51V16190 cycles/64ms Bv 42 transistor M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K PDF

    T462 transistor

    Abstract: EZ613 transistor t462 MSM51C256 MSM51C256-10 MSM51C256-80 MSM51C256RS
    Text: 4bE D rtTTT - • b 7 2 4 2 4 D O D D ' m û ô ITS H O K I J I O K I S E M I C O N D U C T O R GROUP O K I sem iconductor_ T - V * - Z l ' f MSM51C256_ S 262,144 W O R D X1-BIT S D Y N A M IC R A M GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit.


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    b72424D MSM51C256 DIP/18 MSM51C256-80 MSM51C25efore T462 transistor EZ613 transistor t462 MSM51C256-10 MSM51C256RS PDF

    MSM511665-10

    Abstract: MSM511665-80
    Text: 5ÔE D O K I m b754240 0012^40 SEMICONDUCTOR 3^7 « O K I J GROUP O K I sem iconductor M SM 511665 z^s-H 65,536-W O R D x 16-BIT DYN A M IC RAM GENERAL DESCRIPTION The M SM511665 is a new generation dynamic RAM organized as 65,536 words x 16 bits. The technology used to fabricate the MSM511665 is OKI's CMOS silicon gate process technology.


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    b724240 MSM511665 536-WORD 16-BIT MSM511665 W15/I015 Lj7BM240 MSM511665' VOH-W15/1015 MSM511665-10 MSM511665-80 PDF

    MSM5117180-70

    Abstract: MSM5117180-80
    Text: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.


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    MSM5117180 576-Word 18-Bit MSM5117180 cycles/32ms MSM5117180-70 MSM5117180-80 PDF

    oki m6688

    Abstract: M6688 SHARP IC 701 I X11 voice activated recorder circuit evo cn GP 502 op amp ua 743 VOICE REC playback VOICE RECORDER and playback IC MSM6595 MSM6688
    Text: OKI Semiconductor MSM6688 ADPCM SOLID-STATE RECORDER LSI • GENERAL DESCRIPTION The M S M 6688 is a “solid-state-recorder” LSI developed using the ADPCM method. By externally connecting a m icrophone, a speaker, a speaker drive am plifier, and dedicated DRAM through the


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    MSM6688 MSM6688 MSM6791 M6688 XXX-96Q9INSIAI XXX-96S9IAISIAI b72424D oki m6688 M6688 SHARP IC 701 I X11 voice activated recorder circuit evo cn GP 502 op amp ua 743 VOICE REC playback VOICE RECORDER and playback IC MSM6595 PDF

    Untitled

    Abstract: No abstract text available
    Text: SâE D • b72M2MD 0 0 1 2 7 ^ 0 0 K I SEI 1I C0NPUCT0R 344 I0K IJ GROUP O K I semiconductor_ ' MSM514256A 262,144-WORD x 4-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM514256A is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the MSM514256A is OKI’s CMOS silicon gate process technology.


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    b72M2MD MSM514256A 144-WORD MSM514256A PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM7503 Multi-Function PCM C O D E C GENERAL DESCRIPTION The MSM7503 is a high performance, low power CODEC LSI device integrating a 2-wire time division transmission ping-pong transmission interface function and has a basic function of


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    MSM7503 MSM7503 MSM7502. PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor M SM 514800A/ASL 524,288-Word x 8-Bit DYNAMIC RAM D ESCR IPTIO N The M SM514800A/ASL is a new generation dynamic RAM organized as 524,288-word x 8-bit. The technology used to fabricate the MSM514800A/ASL is OKI's CMOS silicon gate process


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    MSM514800A/ASL 288-Word MSM514800A/ASL cycles/16ms, cycles/128ms b7E4240 MSM514800A/AS PDF

    MSM51V17100

    Abstract: 724540
    Text: O K I Semiconductor MSM5 1 V1 7 1 0 0 _ 16,777,216-Word x 1-Bit D Y N A M IC RA M : FAST PAGE M O D E TYPE DESCRIPTION The MSM51V17100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V17100 is OKI's CMOS silicon gate process technology.


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    MSM51V17100_ 216-Word MSM51V17100 cycles/32ms MSM51V17100 A0-A11 b724240 724540 PDF

    TI AIH

    Abstract: R 161 730 000
    Text: O K I Semiconductor MSM51 V17160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the MSM51V17160 is OKI's CMOS silicon gate process technology.


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    MSM51VI7160 576-Word 16-Bit MSM51V17160 cycles/32ms TI AIH R 161 730 000 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM75701 MSM7590 5V Single-Rail ADPCM CODECs DESCRIPTION The M SM 7570 and M SM 7590 are single-rail, low-voltage, single-channel, full-duplex AD PCM CODECs w hich perform voice digitization using presampling and reconstruction filters for transm it and receive


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    MSM75701 MSM7590 MSM7570 b72UH40 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC23840-XXBS20/DS20 8,388,608-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23840-xxBS20/DS20 is a fully decoded 8,388,608-word x 40-bit CMOS Dynamic Random Access Memory Module composed of twenty 16-Mb DRAMs in SOJ MSM5117400 packages mounted


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    MSC23840-XXBS20/DS20 608-Word 40-Bit MSC23840-xxBS20/DS20 16-Mb MSM5117400) 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM514256B/BL 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256B/BL is a new generation dynamic RAM organized as 262,144-word x 4-bit. The technology used to fabricate the MSM514256B/BL is OKI's CMOS silicon gate process technology.


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    MSM514256B/BL 144-Word MSM514256B/BL cycles/64ms 2424G PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components KGL2135 1.7 GHz Two-Modulus Prescaler GENERAL DESCRIPTION The KGL2135 is a two-modulus prescaler designed for PLL frequency synthesizers. The device divides the input frequency by 128 or 130, with mode selection. FEATURES • Toggle frequency: 1.7 GHz


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    KGL2135 KGL2135 2M540 DD22fibS b7E4240 L7E4240 PDF

    Untitled

    Abstract: No abstract text available
    Text: E2D0017-27-42 O K I Semiconductor M S M 6652/53/54/55/56-xxx, M SM 6652A/53A/ 54A/55A/56A/58A-xxx, MSM66P54-XX, MSM66P56-xx Under development , MSM6650 Internal Mask ROM Voice Synthesis 1C, Internal One-Time-Programmable (OTP) ROM Voice Synthesis 1C, External ROM Drive Voice Synthesis 1C


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    E2D0017-27-42 6652/53/54/55/56-xxx, 652A/53A/ 4A/55A/56A/58A-xxx, MSM66P54-XX, MSM66P56-xx MSM6650 MSM6650 MSM6375 theMSM6650familymembersoffer PDF