MSM511665-10
Abstract: MSM511665-80
Text: 5ÔE D O K I m b754240 0012^40 SEMICONDUCTOR 3^7 « O K I J GROUP O K I sem iconductor M SM 511665 z^s-H 65,536-W O R D x 16-BIT DYN A M IC RAM GENERAL DESCRIPTION The M SM511665 is a new generation dynamic RAM organized as 65,536 words x 16 bits. The technology used to fabricate the SM511665 is OKI's CMOS silicon gate process technology.
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b724240
MSM511665
536-WORD
16-BIT
MSM511665
W15/I015
Lj7BM240
MSM511665'
VOH-W15/1015
MSM511665-10
MSM511665-80
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor SM511665_ 65,536-WORD x 16-BIT DYNAMIC RAM GENERAL DESCRIPTION T he M S M 5 1 1665 is a new ge neration dynam ic RAM organized as 65,536 w ords x 16 bits. The tech nolog y used to fabricate the M S M 5 1 1665 is O KI's C M O S silicon gate process technology.
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MSM511665_
536-WORD
16-BIT
MSM511665â
MSM511665"
MSM511665
W15/1015
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transistor w16
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 11665A/AL 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WRITE PER BIT DESCRIPTION The SM511665A/AL is a new generation dynamic RAM organized as 65,536-word x 16-bit. The technology used to fabricate the MSM511664A/AL is OKI's CMOS silicon gate process technology.
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MSM511665A/AL
536-Word
16-Bit
MSM511665A/
16-bit.
MSM511664A/AL
cycles/32ms
transistor w16
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