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    dynamic ram binary cell

    Abstract: No abstract text available
    Text: O K I SEMICONDUCTOR GROUP AT ,6 7 ? 4 2 4 0 O K I O K I SEMICONDUCTOR GROUP 89D 0 2 7 4 6 D L724S40 0D0274L, 4 -c ? 3 '/7 semiconductor_ MSC2311YS8/KS8_ 1,048,576 BY 8 BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki M SC 2311Y S8/KS8 is a fu lly decoded, 1,048,576 words X 8 bit NMOS dynamic random


    OCR Scan     		PDF L724S40 0G027ML, MSC2311YS8/KS8 MSC2311YS8/KS8 MSM411000JS) MSM411000JS; dynamic ram binary cell

    ms1250

    Abstract: SUNNY MSM6650 eprom 6653 ln 258 oki voice synthesizer msm6375 Sunny Oscillators MSM6653 MSM6656-XXX 10FFE
    Text: O K I Semiconductor MSM6652-XXX/MSM6653-XXX/ MSM6654-XXX/MSM6655-XXX/ MSM6656-XXX_ Internal MASK ROM Speech Synthesis LSI G E N E R A L D E S C R IP T IO N The MSM6650 family is a successor to the MSM6375 family that are speech synthesis LSIs w ith


    OCR Scan     		PDF MSM6652-XXX/MSM6653-XXX/ MSM6654-XXX/MSM6655-XXX/ MSM6656-XXX_ MSM6650 MSM6375 12bit -40dB 00MSA/MSK/ 00MHz, AR76-202 ms1250 SUNNY eprom 6653 ln 258 oki voice synthesizer msm6375 Sunny Oscillators MSM6653 MSM6656-XXX 10FFE

    mz 1532

    Abstract: MSM511001A-70 FZJ 165 511001A
    Text: 4bE D w • b?24S4ü O K I □ □□ 'IS n SEMICONDUCTOR O K I semiconductor MSM511001A 1,048,576-WORD b'H «O K IJ GROUP T - V é 'Z S W 1-BITS DYNAMIC RAM x GENERAL DESCRIPTION The MSM511001A is a new generation dynamic RAM organized as 1,048,576 woids by 1 bit. The


    OCR Scan     		PDF 2424G MSM511001A 576-WORD MSM511001A-70 140ns 468mW MSM511001A-8A/80 160ns mz 1532 FZJ 165 511001A

    MSM51V4400L

    Abstract: MSM51V4400SL
    Text: O K I Semiconductor M SM 51V4400/L/SL 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION Th eM SM 51V 4400/L/SL is a 1,048,576-word x4-bit dynamic RAM fabricatedin OKI's CMOS silicon gate technology. The M S M 51V 4400/L /S L achieves high integration, high-speed operation, and


    OCR Scan     		PDF MSM51V4400/L/SL 576-Word TheMSM51V4400/L/SL 76-wordx4-bitdynaimc MSM51V4400/L/SL MSM51V4400/L/ 26/20-pin MSM51V4400L MSM51V4400SL MSM51V4400L MSM51V4400SL

    18-PIN

    Abstract: 20-PIN MSM51C464A MSM51C464A-10 MSM51C464A-70 MSM51C464A-80 ZIP20-P-400 msm51c464 DD177
    Text: O K I Semiconductor MSM5 1C4 6 4 A 65,536-Word x 4-B it DYNAMIC RAM DESCRIPTION The MSM51C464A is a new generation dynamic RAM organized as 65.536-word x 4-bit. The technology used to fabricate the MSM51C464A is OKI's CMOS silicon gate process technology. The


    OCR Scan     		PDF MSM51C464A 536-Word MSM51C464A 256cycles/4ms 18-Pin 300mil b72M240 20-PIN MSM51C464A-10 MSM51C464A-70 MSM51C464A-80 ZIP20-P-400 msm51c464 DD177

    L303A

    Abstract: OL303A100
    Text: O K I SEMICONDUCTOR GROUP 53E D b?24240 0 0 0 ? m 5 T -4 1 -0 7 1,3/im High Power Laser Diode t OL301A-20, QL303A-20, OL301A-100, OL303A-100 • DESCRIPTION OKI OL301A-20, OL303A-20, OL301A-100 and OL303A-100 are 1.3jum InGaAsP/lnP high power laser diodes developed as light sources for fiber-optic communications and optical equipment.


    OCR Scan     		PDF OL301A-20, QL303A-20, OL301A-100, OL303A-100 OL303A-20, OL301A-100 OL303A-100 OL303A-20) L303A OL303A100

    ST chn 624

    Abstract: chn 712 LSPM2 CHN 618 chn 631 chn 648 equivalent CHN 602 CHN 612 h724 MSM6588
    Text: O K I Semiconductor MSM6588 M S M 6588 contents GENGERAL D ESCRIPTION . 568 FEATURES. 568


    OCR Scan     		PDF MSM6588 MSM6588 MSM6388 MSM6588. 0Dlbfl45 096MHz b724240 ST chn 624 chn 712 LSPM2 CHN 618 chn 631 chn 648 equivalent CHN 602 CHN 612 h724