A5 GNC
Abstract: TSOP32-P-4QO-K 51V17400 5116100
Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM51V16190
576-Word
18-Bit
MSM51V16190
cycles/64m
A5 GNC
TSOP32-P-4QO-K
51V17400
5116100
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PDF
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Bv 42 transistor
Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM51V16190
576-Word
18-Bit
MSM51V16190
cycles/64ms
Bv 42 transistor
M5116
tsop50
42-PIN
50-PIN
MSM51V16190-70
MSM51V16190-80
TSQP28-P-400-K
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PDF
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m51171
Abstract: No abstract text available
Text: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.
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OCR Scan
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MSM51V17180
576-Word
18-Bit
MSM51V17180
cycles/32ms
m51171
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM5116190
576-Word
18-Bit
MSM5116190
cycles/64ms
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PDF
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MSM5116180-70
Abstract: MSM5116180-80
Text: O K I Semiconductor MSM5116180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM5116180_
576-Word
18-Bit
MSM5116180
cycles/64ms
MSM5116180-70
MSM5116180-80
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PDF
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32-PIN
Abstract: A10E MSM51V16900-70 MSM51V16900-80
Text: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM51V16900_
152-Word
MSM51V16900
cycles/64ms
32PIN
SOJ32-P-4QO
42PIN
32-PIN
A10E
MSM51V16900-70
MSM51V16900-80
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PDF
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Bv 42 transistor
Abstract: tsop50 42-PIN MSM5116190-70 MSM5116190-80
Text: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM5116190
576-Word
18-Bit
MSM5116190
cycles/64ms
Bv 42 transistor
tsop50
42-PIN
MSM5116190-70
MSM5116190-80
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PDF
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MSM5117180-70
Abstract: MSM5117180-80
Text: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM5117180
576-Word
18-Bit
MSM5117180
cycles/32ms
MSM5117180-70
MSM5117180-80
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PDF
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DD1750
Abstract: No abstract text available
Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM5117900
152-Word
152-w
cycles/32m
32PIN
SOJ32-P-4QO
42PIN
SOJ42-P-400
b754240
DD1750
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PDF
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081m
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V17900_ 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51VI7900 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM51V17900
152-Word
MSM51V17900
MSM51VI7900
cycles/32ms
32PIN
SOJ32-P-4QO
42PIN
081m
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PDF
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e33a
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM51V17190
576-Word
18-Bit
MSM51V17190
2048cycles/32m
e33a
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PDF
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Bv 42 transistor
Abstract: tsop50 42-PIN MSM5117190-70 MSM5117190-80 SOJ42-P-400
Text: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM5117190
576-Word
18-Bit
MSM5117190
cycles/32ms
Bv 42 transistor
tsop50
42-PIN
MSM5117190-70
MSM5117190-80
SOJ42-P-400
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PDF
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2454D
Abstract: 2DQ11 2M54G
Text: O K I Semiconductor MSM5117180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM5117180
576-Word
18-Bit
MSM5117180
cycles/32ms
2454D
2DQ11
2M54G
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PDF
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20 TI 54240
Abstract: MSM51VI6180
Text: O K I Semiconductor MSM51 V16180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM51V16180
576-Word
18-Bit
MSM51V16180
MSM51VI6180
cycles/64ms
20 TI 54240
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PDF
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32-PIN
Abstract: MSM5116900-70 MSM5116900-80 B724e
Text: O K I Semiconductor MSM5116900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM5116900 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM5116900
152-Word
MSM5116900
cycles/64ms
32PIN
SOJ32-P-4QO
42PIN
32-PIN
MSM5116900-70
MSM5116900-80
B724e
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PDF
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Untitled
Abstract: No abstract text available
Text: OKI Semiconductor MSM5116900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM5116900 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM5116900
152-Word
MSM5116900
cycles/64ms
32PIN
SOJ32-P-4QO
42PIN
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PDF
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m51171
Abstract: m32AG M5116
Text: OKI Semiconductor MSM5116180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM5116180
576-Word
18-Bit
MSM5116180
cycles/64ms
m51171
m32AG
M5116
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM51V16900
152-Word
MSM51V16900
cycles/64ms
32PIN
SOJ32-P-4QO
42PIN
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PDF
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uras 4
Abstract: uras 2 5116100
Text: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM5117190
576-Word
18-Bit
MSM5117190
cycles/32m
uras 4
uras 2
5116100
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PDF
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42-PIN
Abstract: MSM51V16180-70 MSM51V16180-80 V16180 MSM51VI6180
Text: O K I Semiconductor MSM51V16180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM51V16180
576-Word
18-Bit
MSM51V16180
MSM51VI6180
cycles/64ms
42-PIN
MSM51V16180-70
MSM51V16180-80
V16180
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PDF
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Bv 42 transistor
Abstract: CI 576 tsop50 42-PIN MSM51V17190-70 MSM51V17190-80 oki Package SOJ Scans-0053100
Text: O K I Semiconductor M SM 51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM51V17190_
576-Word
18-Bit
MSM51V17190
cycles/32ms
Bv 42 transistor
CI 576
tsop50
42-PIN
MSM51V17190-70
MSM51V17190-80
oki Package SOJ
Scans-0053100
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PDF
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transistor W2W
Abstract: w2w transistor oki Package SOJ 32-PIN A204 MSM51V17900-70 MSM51V17900-80 uras 14
Text: O K I Semiconductor MSM51V17900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51VI7900 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM51V17900_
152-Word
MSM51V17900
MSM51VI7900
cycles/32ms
32PIN
SOJ32-P-4QO
42PIN
transistor W2W
w2w transistor
oki Package SOJ
32-PIN
A204
MSM51V17900-70
MSM51V17900-80
uras 14
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PDF
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