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    SI8409DB Price and Stock

    Vishay Siliconix SI8409DB-T1-E1

    MOSFET P-CH 30V 4.6A 4MICROFOOT
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    DigiKey SI8409DB-T1-E1 Digi-Reel 6,673 1
    • 1 $1.31
    • 10 $0.882
    • 100 $1.31
    • 1000 $0.45755
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    SI8409DB-T1-E1 Cut Tape 6,673 1
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    SI8409DB-T1-E1 Reel 6,000 3,000
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    Vishay Intertechnologies SI8409DB-T1-E1

    P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI8409DB-T1-E1)
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    Avnet Americas SI8409DB-T1-E1 Reel 13 Weeks 3,000
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    Mouser Electronics SI8409DB-T1-E1 17,642
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    Verical SI8409DB-T1-E1 3,000 49
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    SI8409DB-T1-E1 3,000 3,000
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    SI8409DB-T1-E1 982 15
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    Arrow Electronics SI8409DB-T1-E1 3,000 13 Weeks 3,000
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    SI8409DB-T1-E1 Cut Strips 982 13 Weeks 1
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    Newark SI8409DB-T1-E1 Cut Tape 3,000
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    SI8409DB-T1-E1 Reel 3,000
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    Quest Components SI8409DB-T1-E1 7,904
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    TTI SI8409DB-T1-E1 Reel 3,000
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    Avnet Asia SI8409DB-T1-E1 15 Weeks 3,000
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    Chip1Stop SI8409DB-T1-E1 Cut Tape 3,000
    • 1 $0.564
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    EBV Elektronik SI8409DB-T1-E1 7 Weeks 3,000
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    Vishay Huntington SI8409DB-T1-E1

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    NexGen Digital SI8409DB-T1-E1 165
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    Win Source Electronics SI8409DB-T1-E1 58,754
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    SI8409DB Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8409DB Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    SI8409DB-T1-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 4.6A 2X2 4-MFP Original PDF

    SI8409DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si8409DB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8409DB Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8409DB S-52398Rev. 21-Nov-05

    Si8409DB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8409DB Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8409DB 18-Jul-08

    Si8401DB

    Abstract: Si8409DB
    Text: Si8409DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.046 at VGS = - 4.5 V - 6.3 0.065 at VGS = - 2.5 V - 5.3 Qg (Typ.) 17 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8409DB Si8401DB Si8409DB-T1-E1 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si8409DB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.046 at VGS = - 4.5 V - 6.3 0.065 at VGS = - 2.5 V - 5.3 Qg (Typ.) 17 MICRO FOOT Bump Side View 3 Backside View APPLICATIONS 2 D D S G 4 • TrenchFET Power MOSFET


    Original     		PDF Si8409DB Si8401DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    8409 diode

    Abstract: Si8409DB 8409 J-STD-020A Si8401DB S-41816 diode 8409 marking 8409
    Text: Si8409DB New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.046 @ VGS = −4.5 V −6.3 0.065 @ VGS = −2.5 V −5.3 Qg (Typ) 17 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging


    Original     		PDF Si8409DB Si8401DB Si8409DB-T1--E1 08-Apr-05 8409 diode 8409 J-STD-020A S-41816 diode 8409 marking 8409

    DG3000

    Abstract: No abstract text available
    Text: Si8409DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.046 at VGS = - 4.5 V - 6.3 0.065 at VGS = - 2.5 V - 5.3 Qg (Typ.) 17 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8409DB Si8401DB Si8409DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 DG3000

    Untitled

    Abstract: No abstract text available
    Text: Si8409DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.046 at VGS = - 4.5 V - 6.3 0.065 at VGS = - 2.5 V - 5.3 Qg (Typ.) 17 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8409DB Si8401DB Si8409DB-T1-E1 11-Mar-11

    Si8413DB

    Abstract: si8409db Si8401DB Si8402DB Si8405DB Si8411DB Si8415DB Si8419DB t1/Si8413DB
    Text: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8401DB Si8402DB Si8405DB Si8409DB Si8411DB Si8413DB Si8415DB Si8419DB MICRO FOOTr 2X2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8401DB


    Original     		PDF Si8401DB Si8402DB Si8405DB Si8409DB Si8411DB Si8413DB Si8415DB Si8419DB 275-mm t1/Si8413DB

    diode 8409

    Abstract: marking 8409 8409 diode
    Text: Si8409DB New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.046 @ VGS = −4.5 V −6.3 0.065 @ VGS = −2.5 V −5.3 Qg (Typ) 17 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging


    Original     		PDF Si8409DB Si8401DB Si8409DB-T1--E1 S-41816--Rev. 11-Oct-04 diode 8409 marking 8409 8409 diode

    4833

    Abstract: 6883 AN609 Si8409DB
    Text: Si8409DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si8409DB AN609 20-Dec-05 4833 6883

    Si8401DB

    Abstract: DG3000
    Text: Si8409DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.046 at VGS = - 4.5 V - 6.3 0.065 at VGS = - 2.5 V - 5.3 Qg (Typ.) 17 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8409DB Si8401DB Si8409DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 DG3000

    Untitled

    Abstract: No abstract text available
    Text: Si8409DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) () ID (A) 0.046 at VGS = -4.5 V -6.3 0.065 at VGS = -2.5 V -5.3 Qg (TYP.) 17 • TrenchFET power MOSFET • MICRO FOOT® chipscale packaging reduces


    Original     		PDF Si8409DB Si8401DB 840xx 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8487DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY -30 • TrenchFET power MOSFET RDS(on) () MAX. ID (A) a, e 0.031 at VGS = -10 V -7.7 • Low-on resistance 0.035 at VGS = -4.5 V -7.3 • Ultra-small 1.6 mm x 1.6 mm maximum outline


    Original     		PDF Si8487DB Si8409DB 848xx 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    SI-8100D

    Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,


    Original     		PDF Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB

    si8487

    Abstract: No abstract text available
    Text: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 ID • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si8487DB Si8409DB 2002/95/EC 11-Mar-11 si8487

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X

    SI8487DB-T1-E1

    Abstract: 71990 SI8902 si8487
    Text: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 TrenchFET Power MOSFET Low-on Resistance Ultra-Small 1.6 mm x 1.6 mm Maximum Outline


    Original     		PDF Si8487DB Si8409DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI8487DB-T1-E1 71990 SI8902 si8487

    Untitled

    Abstract: No abstract text available
    Text: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 ID • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si8487DB Si8409DB 2002/95/EC 11-Mar-11

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    Untitled

    Abstract: No abstract text available
    Text: Si8487DB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 TrenchFET Power MOSFET Low-on Resistance Ultra-Small 1.6 mm x 1.6 mm Maximum Outline


    Original     		PDF Si8487DB Si8409DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 ID • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si8487DB Si8409DB 2002/95/EC 11-Mar-11