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    SI8411DB Search Results

    SI8411DB Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8411DB Vishay Siliconix MOSFETs Original PDF
    SI8411DB Vishay Telefunken P-channel 20-v (d-s) Mosfet Original PDF
    Si8411DB SPICE Device Model Vishay P-Channel 20-V (D-S) MOSFET Original PDF
    SI8411DB-T1 Vishay Telefunken Original PDF

    SI8411DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si8401DB-T1

    Abstract: Si8402DB-T1 Si8405DB-T1 Si8411DB-T1
    Text: Tape Information Vishay Siliconix MICRO FOOTr 2x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.000.10 4.000.10 +0.10 1.50 -0.00 A 2.000.05 B B 1.75  0.1 3.5  0.05 8.0 +0.30 -0.10 SECTION A-A


    Original     		PDF 275-mm Si8401DB-T1 Si8402DB-T1 Si8405DB-T1 Si8411DB-T1 10-sprocket 93-5211-x) 92-5210-x)

    Untitled

    Abstract: No abstract text available
    Text: Tape Information Vishay Siliconix MICRO FOOT 2 x 2: 0.8 mm PITCH, 0.275 mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.000.10 4.000.10 + 0.10 Ø 1.50 - 0.00 A 2.000.05 B B 1.75  0.1 3.5  0.05 8.0 +- 0.30 0.10 SECTION A-A


    Original     		PDF Si8401DB-T1 Si8402DB-T1 Si8405DB-T1 Si8411DB-T1 93-5211-X) 92-5210-X) C10-0948-Rev. 11-Oct-10 93-5222-X

    4833

    Abstract: AN609 Si8411DB
    Text: Si8411DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si8411DB AN609 20-Dec-05 4833

    Si8401DB-T1

    Abstract: Si8402DB-T1 Si8405DB-T1 Si8411DB-T1
    Text: Tape Information Vishay Siliconix MICRO FOOTr 2x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.00"0.10 4.00"0.10 +0.10 O1.50−0.00 A 2.00"0.05 0.254"0.02 B BO B 1.75 " 0.1 3.5 " 0.05 8.0 +0.30 −0.10 5_ MAX


    Original     		PDF 275-mm Si8401DB-T1 Si8402DB-T1 Si8405DB-T1 Si8411DB-T1 10-sprocket 93-5211-x) 92-5210-x)

    Si8411DB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8411DB Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8411DB 10-Sep-03

    J-STD-020A

    Abstract: Si8411DB Si8411DB-T1
    Text: Si8411DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.054 @ VGS = −4.5 V −5.9 0.075 @ VGS = −2.5 V −5.0 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8411DB Si8411DB-T1 Si8411DB-T1--E1 S-50066--Rev. 17-Jan-05 J-STD-020A

    Si8411DB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8411DB Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8411DB 18-Jul-08

    J-STD-020A

    Abstract: Si8411DB Si8411DB-T1
    Text: Si8411DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.054 @ VGS = −4.5 V −5.9 0.075 @ VGS = −2.5 V −5.0 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8411DB Si8411DB-T1 Si8411DB-T1--E1 18-Jul-08 J-STD-020A

    Si8413DB

    Abstract: si8409db Si8401DB Si8402DB Si8405DB Si8411DB Si8415DB Si8419DB t1/Si8413DB
    Text: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8401DB Si8402DB Si8405DB Si8409DB Si8411DB Si8413DB Si8415DB Si8419DB MICRO FOOTr 2X2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8401DB


    Original     		PDF Si8401DB Si8402DB Si8405DB Si8409DB Si8411DB Si8413DB Si8415DB Si8419DB 275-mm t1/Si8413DB

    J-STD-020A

    Abstract: Si8411DB Si8411DB-T1
    Text: Si8411DB Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.054 @ VGS = −4.5 V −5.9 0.075 @ VGS = −2.5 V −5.0 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8411DB Si8411DB-T1 S-32349--Rev. 17-Nov-03 J-STD-020A

    Untitled

    Abstract: No abstract text available
    Text: Si8411DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.054 @ VGS = −4.5 V −5.9 0.075 @ VGS = −2.5 V −5.0 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8411DB Si8411DB-T1 Si8411DB-T1--E1 08-Apr-05

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8