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Vishay Siliconix SI8487DB-T1-E1 MOSFET P-CH 30V 4MICROFOOT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI8487DB-T1-E1	Cut Tape	2,697		1	1 $0.95 10 $0.591 100 $0.95 1000 $0.26721 10000 $0.26721	Buy Now
	SI8487DB-T1-E1	Digi-Reel	2,697		1	1 $0.95 10 $0.591 100 $0.95 1000 $0.26721 10000 $0.26721	Buy Now
	SI8487DB-T1-E1	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.23081	Buy Now
Vishay Intertechnologies SI8487DB-T1-E1 P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI8487DB-T1-E1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI8487DB-T1-E1	Reel		6 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.18327	Buy Now
Mouser Electronics	SI8487DB-T1-E1		802			1 $0.91 10 $0.574 100 $0.378 1000 $0.263 10000 $0.186	Buy Now
Newark	SI8487DB-T1-E1	Reel			3,000	1 $0.263 10 $0.263 100 $0.263 1000 $0.263 10000 $0.237	Buy Now
	SI8487DB-T1-E1	Cut Tape			3,000	1 - 10 - 100 - 1000 - 10000 $0.257	Buy Now
TTI	SI8487DB-T1-E1	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.19	Buy Now
TME	SI8487DB-T1-E1		885		1	1 $0.794 10 $0.369 100 $0.293 1000 $0.264 10000 $0.264	Buy Now

Chip One Stop	SI8487DB-T1-E1	Cut Tape	3,000			1 - 10 $0.567 100 $0.369 1000 $0.265 10000 $0.221	Buy Now
EBV Elektronik	SI8487DB-T1-E1			7 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Huntington SI8487DB-T1-E1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
NexGen Digital	SI8487DB-T1-E1		3,044			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI8487 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI8487DB-T1-E1		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V MICROFOOT		Original	PDF

SI8487 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Si8487DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY -30 • TrenchFET power MOSFET RDS(on) () MAX. ID (A) a, e 0.031 at VGS = -10 V -7.7 • Low-on resistance 0.035 at VGS = -4.5 V -7.3 • Ultra-small 1.6 mm x 1.6 mm maximum outline	Original	Si8487DB Si8409DB 848xx 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si8487DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si8487DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
si8487 Abstract: No abstract text available Text: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 ID • Halogen-free According to IEC 61249-2-21 Definition	Original	Si8487DB Si8409DB 2002/95/EC 11-Mar-11 si8487	PDF
63635 Abstract: Si8487DB Text: SPICE Device Model Si8487DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si8487DB 11-Mar-11 63635	PDF
SI8487DB-T1-E1 Abstract: 71990 SI8902 si8487 Text: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 TrenchFET Power MOSFET Low-on Resistance Ultra-Small 1.6 mm x 1.6 mm Maximum Outline	Original	Si8487DB Si8409DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI8487DB-T1-E1 71990 SI8902 si8487	PDF
Untitled Abstract: No abstract text available Text: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 ID • Halogen-free According to IEC 61249-2-21 Definition	Original	Si8487DB Si8409DB 2002/95/EC 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: Si8487DB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 TrenchFET Power MOSFET Low-on Resistance Ultra-Small 1.6 mm x 1.6 mm Maximum Outline	Original	Si8487DB Si8409DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 ID • Halogen-free According to IEC 61249-2-21 Definition	Original	Si8487DB Si8409DB 2002/95/EC 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 TrenchFET Power MOSFET Low-on Resistance Ultra-Small 1.6 mm x 1.6 mm Maximum Outline	Original	Si8487DB Si8409DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
SI-8100D Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,	Original	Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB	PDF
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of	Original	SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402	PDF
Untitled Abstract: No abstract text available Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,	Original	1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406	PDF
Si7141 Abstract: SiA447DJ SI7615A Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on	Original	SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF