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    Vishay Siliconix SI8407DB-T2-E1

    MOSFET P-CH 20V 5.8A 6MICRO FOOT
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    DigiKey SI8407DB-T2-E1 Digi-Reel 1
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    SI8407DB-T2-E1 Cut Tape
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    SI8407DB Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI8407DB Vishay Siliconix MOSFETs Original PDF
    SI8407DB-T2 Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF
    SI8407DB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 5.8A 2X2 6-MFP Original PDF
    SI8407DB-T2-E1 Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF

    SI8407DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI8407DB

    Abstract: 8902E Si8902EDB
    Text: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8407DB Si8902EDB MICRO FOOTr 2X3: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8407DB T2 Si8902EDB T2 Device on Tape Orientation 8902E


    Original     		PDF Si8407DB Si8902EDB 275-mm 8902E 8902E

    Si8407DB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8407DB Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8407DB S-52398Rev. 21-Nov-05

    Untitled

    Abstract: No abstract text available
    Text: Tape Information Vishay Siliconix MICRO FOOT 2 x 3: 0.8 mm PITCH, 0.275 mm BUMP HEIGHT Si8407DB-T2, Si8902EDB-T2 4.00 0.10 4.00 0.10 + 0.10 Ø 1.50 - 0.00 A 2.00 0.05 B 1.75 0.10 B 5.50 0.05 12.0 + 0.30 - 0.10 SECTION A-A A SECTION B-B Notes 1. 10 sprocket hole pitch cumulative tolerance ± 0.2.


    Original     		PDF Si8407DB-T2 Si8902EDB-T2 93-5211-X) 92-5210-X) C10-0948-Rev. 11-Oct-10 93-5223-X 11-Oct-10

    Untitled

    Abstract: No abstract text available
    Text: Si8407DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.027 at VGS = - 4.5 V - 8.2 0.032 at VGS = - 2.5 V - 7.5 0.045 at VGS = - 1.8 V - 6.6 MICRO FOOT Bump Side View S S 4 6 G S 3 • TrenchFET Power MOSFET


    Original     		PDF Si8407DB 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si8407DB

    Abstract: No abstract text available
    Text: Si8407DB Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.027 @ VGS = - 4.5 V - 8.2 0.032 @ VGS = - 2.5 V - 7.5 0.045 @ VGS = - 1.8 V - 6.6 MICRO FOOT Bump Side View 5 S S D TrenchFETr Power MOSFET


    Original     		PDF Si8407DB Si8407DB-T2 63/37Pb S-31502--Rev. 14-Jul-03

    3188

    Abstract: Model 8130 mosfet 0018 AN609 Si8407DB 40978
    Text: Si8407DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si8407DB AN609 08-Aug-07 3188 Model 8130 mosfet 0018 40978

    Si8407DB

    Abstract: No abstract text available
    Text: Si8407DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.027 at VGS = - 4.5 V - 8.2 0.032 at VGS = - 2.5 V - 7.5 0.045 at VGS = - 1.8 V - 6.6 MICRO FOOT Bump Side View S S 4 6 G S 3 • TrenchFET Power MOSFET


    Original     		PDF Si8407DB 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si8407DB

    Abstract: Si8902EDB
    Text: Tape Information Vishay Siliconix MICRO FOOTr 2x3: 0.8−mm PITCH, 0.275−mm BUMP HEIGHT Si8407DB−T2, Si8902EDB−T2 4.00"0.10 4.00"0.10 +0.10 O1.50 - 0.00 A 2.00"0.05 0.279"0.02 B BO B 1.75 " 0.10 5.50 " 0.05 12.0 +0.30 - 0.10 5_ MAX SECTION A-A A 5_ MAX


    Original     		PDF 275-mm Si8407DB-T2 Si8902EDB-T2 10-sprocket 93-5211-x) 92-5210-x) S-31501--Rev. 14-Jul-03 Si8407DB Si8902EDB

    Si8407DB

    Abstract: Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB Si8401DB Si8405DB Si8900EDB
    Text: Device Orientation—MICRO FOOTrPackages Vishay Siliconix Part Number Index APPENDIX AĊMOSFETS Part Number APPENDIX BĊANALOG ICS Appendix Part Number Appendix Si8401DB A -1 DG3000DB B -1 Si8405DB A -1 DG3001DB B -2 Si8407DB A -2 DG3408DB B -3 Si8900EDB A -3


    Original     		PDF Si8401DB DG3000DB Si8405DB DG3001DB Si8407DB DG3408DB Si8900EDB DG3409DB Si8902EDB S-31635--Rev. Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB

    Si8407DB-T2

    Abstract: No abstract text available
    Text: Tape Information Vishay Siliconix MICRO FOOTr 2x3: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8407DB-T2, Si8902EDB-T2 4.00"0.10 4.00"0.10 +0.10 O1.50−0.00 A 2.00"0.05 B B 1.75 " 0.10 5.50 " 0.05 12.0 +0.30 −0.10 SECTION A-A A SECTION B-B NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2 mm.


    Original     		PDF 275-mm Si8407DB-T2 Si8902EDB-T2 92-5210-x) S-40510--Rev. 17-May-04

    Si8407DB

    Abstract: J-STD-020A Si8407DB-T2
    Text: Si8407DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.027 @ VGS = −4.5 V −8.2 0.032 @ VGS = −2.5 V −7.5 0.045 @ VGS = −1.8 V −6.6 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging


    Original     		PDF Si8407DB Si8407DB-T2 Si8407DB-T2--E1 S-50066--Rev. 17-Jan-05 J-STD-020A

    SMD mosfet MARKING code TC

    Abstract: No abstract text available
    Text: Si8407DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.027 at VGS = - 4.5 V - 8.2 0.032 at VGS = - 2.5 V - 7.5 0.045 at VGS = - 1.8 V - 6.6 MICRO FOOT Bump Side View S S 4 6 G S 3 • TrenchFET Power MOSFET


    Original     		PDF Si8407DB 2002/95/EC Si8407DB-T2-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SMD mosfet MARKING code TC

    Si8407DB

    Abstract: J-STD-020A Si8407DB-T2 S5006
    Text: Si8407DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.027 @ VGS = −4.5 V −8.2 0.032 @ VGS = −2.5 V −7.5 0.045 @ VGS = −1.8 V −6.6 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging


    Original     		PDF Si8407DB Si8407DB-T2 Si8407DB-T2--E1 08-Apr-05 J-STD-020A S5006

    Si8407DB

    Abstract: Si8407DB-T2-E1
    Text: Si8407DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V - 8.2 0.032 at VGS = - 2.5 V - 7.5 0.045 at VGS = - 1.8 V - 6.6 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging


    Original     		PDF Si8407DB Si8407DB-T2-E1 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si8407DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.027 at VGS = - 4.5 V - 8.2 0.032 at VGS = - 2.5 V - 7.5 0.045 at VGS = - 1.8 V - 6.6 MICRO FOOT Bump Side View S S 4 6 G S 3 • TrenchFET Power MOSFET


    Original     		PDF Si8407DB 2002/95/EC Si8407DB-T2-E1 11-Mar-11

    Si8407DB

    Abstract: No abstract text available
    Text: Si8407DB New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 D TrenchFETr Power MOSFET D New MICRO FOOTt Chipscale Packaging Provides Ultra-Low Footprint Area Profile (0.62 mm) and On-Resistance rDS(on) (W) ID (A)


    Original     		PDF Si8407DB Si8407DB-T2 63/37Pb S-31502--Rev. 14-Jul-03

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    SI-8100D

    Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,


    Original     		PDF Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    AUTOMATIC ROOM LIGHT CONTROLLER ppt

    Abstract: coin operated mobile phone charger Coin Based Mobile Phone Charger scu RX2 pin DIAGRAM sec 222M se coin operated mobile phone charger circuit diagram transistor smd l33 circuit diagram for Coin based mobile battery charger cpu coin selector active matrix lcd module 12v dc 170ma
    Text: Freescale Semiconductor Advance Information Document Number: SC900841 Rev. 2.0, 2/2011 Ultra-Mobile Platform PMIC 900841 The 900841 is a high-efficiency, Power Management Integrated Circuit PMIC , capable of providing all operating voltages for ultramobile platforms through its 29 voltage rails. It has nine switching power


    Original     		PDF SC900841 22-channel AUTOMATIC ROOM LIGHT CONTROLLER ppt coin operated mobile phone charger Coin Based Mobile Phone Charger scu RX2 pin DIAGRAM sec 222M se coin operated mobile phone charger circuit diagram transistor smd l33 circuit diagram for Coin based mobile battery charger cpu coin selector active matrix lcd module 12v dc 170ma

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx