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    S10288 Price and Stock

    Radiall VS102880

    Circular MIL Spec Connector VS102880
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics VS102880
    • 1 $61.37
    • 10 $57.76
    • 100 $49.45
    • 1000 $49.45
    • 10000 $49.45
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    S10288 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SiS472DN

    Abstract: SIS472DN-T1-GE3
    Text: SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original
    PDF SiS472DN 2002/95/EC SiS472DN-T1-GE3 11-Mar-11

    S10-28

    Abstract: Si4288DY
    Text: SPICE Device Model Si4288DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si4288DY 18-Jul-08 S10-28

    Si4909DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4909DY Vishay Siliconix Dual P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si4909DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR870DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.006 at VGS = 10 V 60 0.0064 at VGS = 7.5 V 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 26.7 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    PDF SiR870DP 2002/95/EC SiR870DP-T1-GE3 11-Mar-11

    Si9945BDY

    Abstract: si9945b
    Text: SPICE Device Model Si9945BDY Vishay Siliconix Dual N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si9945BDY 18-Jul-08 si9945b

    SIR870

    Abstract: No abstract text available
    Text: New Product SiR870DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.006 at VGS = 10 V 60 0.0064 at VGS = 7.5 V 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 26.7 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    PDF SiR870DP 2002/95/EC SiR870DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIR870

    Untitled

    Abstract: No abstract text available
    Text: SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.8 nC PowerPAK 1212-8 D S 3.30 mm • Halogen-free According to IEC 61249-2-21


    Original
    PDF SiS472DN 2002/95/EC SiS472DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR870DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.006 at VGS = 10 V 60 0.0064 at VGS = 7.5 V 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 26.7 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    PDF SiR870DP 2002/95/EC SiR870DP-T1-GE3 18-Jul-08

    SIS472DN-T1-GE3

    Abstract: No abstract text available
    Text: SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original
    PDF SiS472DN 2002/95/EC SiS472DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original
    PDF SiS472DN 2002/95/EC SiS472DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT NO 28.0 !j;f - 9054-8-601 26.0 *0.2 ON TIP *0.13 ON BASE 2.0 *0.1 NON ACCUM *0.2 . ON TIP i 2.0 * DATE DESCRIPTION ECR S10288 RLSO BS LOW BY ECR S20202 BS LOW 25JUL92 ECR S20292 BS LOW 280CT92 ECR S20300 BS LOW Q3N0V92 ECR S30073 YB TAN 03MAR93 28AUG91


    OCR Scan
    PDF 28AUG91 25JUL92 S10288 S20202 S20292 280CT92 Q3N0V92 03MAR93 S20300 S30073