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    Radiall VS102880

    Circular MIL Spec Connector VS102880
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    Mouser Electronics VS102880
    • 1 $61.37
    • 10 $57.76
    • 100 $49.45
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    TURCK Inc RKC4.5T-7/CS10288

    Ceu |Turck RKC4.5T-7/CS10288
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    Newark RKC4.5T-7/CS10288 Bulk 1
    • 1 $68.23
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    TURCK Inc RKC4.5T-85/CS10288

    |Turck RKC4.5T-85/CS10288
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    Newark RKC4.5T-85/CS10288 Bulk 1
    • 1 $556.72
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    TURCK Inc WKC 4.5T-4/CS10288

    Ceu |Turck WKC 4.5T-4/CS10288
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    Newark WKC 4.5T-4/CS10288 Bulk 1
    • 1 $41.2
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    TURCK Inc RKC 4.5T-6/CS10288

    Ceu |Turck RKC 4.5T-6/CS10288
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    Newark RKC 4.5T-6/CS10288 Bulk 1
    • 1 $53.4
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    S10288 Datasheets Context Search

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    Contextual Info: PRODUCT NO 28.0 !j;f - 9054-8-601 26.0 *0.2 ON TIP *0.13 ON BASE 2.0 *0.1 NON ACCUM *0.2 . ON TIP i 2.0 * DATE DESCRIPTION ECR S10288 RLSO BS LOW BY ECR S20202 BS LOW 25JUL92 ECR S20292 BS LOW 280CT92 ECR S20300 BS LOW Q3N0V92 ECR S30073 YB TAN 03MAR93 28AUG91


    OCR Scan     		28AUG91 25JUL92 S10288 S20202 S20292 280CT92 Q3N0V92 03MAR93 S20300 S30073 PDF

    SiS472DN

    Abstract: SIS472DN-T1-GE3
    Contextual Info: SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		SiS472DN 2002/95/EC SiS472DN-T1-GE3 11-Mar-11 PDF

    S10-28

    Abstract: Si4288DY
    Contextual Info: SPICE Device Model Si4288DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si4288DY 18-Jul-08 S10-28 PDF

    Si4909DY

    Contextual Info: SPICE Device Model Si4909DY Vishay Siliconix Dual P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si4909DY 18-Jul-08 PDF

    Contextual Info: New Product SiR870DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.006 at VGS = 10 V 60 0.0064 at VGS = 7.5 V 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 26.7 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR870DP 2002/95/EC SiR870DP-T1-GE3 11-Mar-11 PDF

    Si9945BDY

    Abstract: si9945b
    Contextual Info: SPICE Device Model Si9945BDY Vishay Siliconix Dual N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si9945BDY 18-Jul-08 si9945b PDF

    SIR870

    Contextual Info: New Product SiR870DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.006 at VGS = 10 V 60 0.0064 at VGS = 7.5 V 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 26.7 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR870DP 2002/95/EC SiR870DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIR870 PDF

    Contextual Info: SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.8 nC PowerPAK 1212-8 D S 3.30 mm • Halogen-free According to IEC 61249-2-21


    Original     		SiS472DN 2002/95/EC SiS472DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: New Product SiR870DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.006 at VGS = 10 V 60 0.0064 at VGS = 7.5 V 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 26.7 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR870DP 2002/95/EC SiR870DP-T1-GE3 18-Jul-08 PDF

    SIS472DN-T1-GE3

    Contextual Info: SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		SiS472DN 2002/95/EC SiS472DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		SiS472DN 2002/95/EC SiS472DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF