Untitled
Abstract: No abstract text available
Text: PolarTM Power MOSFETs VDSS ID25 IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 IXTV RDS(on) trr(typ) G S D (TAB) 500V 22A Ω 270mΩ 400ns TO-3P (IXTQ) PLUS220SMD (IXTV_S) G D S = = ≤
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IXTV22N50P
IXTV22N50PS
IXTQ22N50P
IXTH22N50P
PLUS220
400ns
PLUS220SMD
O-247
100ms
IXTV22N50P
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IXFH36N50P
Abstract: IXFT36N50P
Text: IXFV36N50PS IXFV36N50P IXFH36N50P IXFT36N50P PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = = ≤ ≤ RDS on trr 500V 36A Ω 170mΩ 200ns PLUS220SMD (IXFV.S) G S D (Tab) PLUS220 (IXFV) Symbol
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IXFV36N50PS
IXFV36N50P
IXFH36N50P
IXFT36N50P
200ns
PLUS220SMD
PLUS220
O-268
IXFT36N50P
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IXTQ22N50P
Abstract: IXTH22N50P IXTV22N50P IXTV22N50PS ixtq-22n50p 22N50 PLUS220SMD IXTH 22N50P
Text: IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 IXTV VDSS ID25 RDS(on) trr(typ) G D (TAB) S 500V 22A Ω 270mΩ 400ns TO-3P (IXTQ) PLUS220SMD (IXTV_S) G D S = = ≤
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IXTV22N50P
IXTV22N50PS
IXTQ22N50P
IXTH22N50P
PLUS220
400ns
PLUS220SMD
O-247
100ms
IXTV22N50P
IXTQ22N50P
IXTH22N50P
IXTV22N50PS
ixtq-22n50p
22N50
PLUS220SMD
IXTH 22N50P
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Untitled
Abstract: No abstract text available
Text: VDSS ID25 IXFV36N50PS IXFV36N50P IXFH36N50P IXFT36N50P PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ RDS on trr 500V 36A Ω 170mΩ 200ns PLUS220SMD (IXFV.S) G S D (Tab) Symbol Test Conditions
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IXFV36N50PS
IXFV36N50P
IXFH36N50P
IXFT36N50P
200ns
PLUS220SMD
PLUS220
IXFH36N50P
IXFT36N50P
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mj350
Abstract: TF010
Text: High Voltage IGBT IC25 = 32 A VCES = 2500 V VCE sat = 3.9 V IXLV 19N250AS PLUS220SMD G IGBT E Symbol Conditions V CES TVJ = 25°C to 150°C Maximum Ratings VGES VGEM IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 47 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH
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19N250AS
PLUS220SMD
IXLF19N250A
mj350
TF010
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol IXBV22N300S Test Conditions VCES = 3000V IC110 = 22A VCE sat 2.7V PLUS220SMDHV Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M
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IXBV22N300S
IC110
PLUS220SMDHV
100ms
22N300
3-10-14-A
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TO-3P weight
Abstract: ixys ixfh 30n50p QG SMD TRANS PLUS220SMD 123B16
Text: Advance Technical Information PolarHVTM Power HiPerFET MOSFET VDSS ID25 IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS on trr = 500 V = 30 A Ω = 200 mΩ < 200 ns TO-3P (IXFQ)
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30N50P
30N50PS
PLUS220
TO-3P weight
ixys ixfh 30n50p
QG SMD TRANS
PLUS220SMD
123B16
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IXTH03N400
Abstract: IXTV03N400S PLUS220SMD 03N400
Text: Advance Technical Information IXTH03N400 IXTV03N400S High Voltage Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 4000 V VGSS Continuous
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IXTH03N400
IXTV03N400S
300mA
O-247
03N400
IXTH03N400
IXTV03N400S
PLUS220SMD
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ixys ixfh 30n50p
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM Power HiPerFET MOSFET VDSS ID25 IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS on trr = 500 V = 30 A Ω = 200 mΩ < 200 ns TO-3P (IXFQ)
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30N50P
30N50PS
PLUS220
ixys ixfh 30n50p
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22N50P
Abstract: IXTQ 22N50P IXTQ22N50P 22N50 IXTH 22N50P
Text: PolarHVTM Power MOSFET IXTH 22N50P IXTQ 22N50P IXTV 22N50P IXTV 22N50PS N-Channel Enhancement Mode Avalanche Rated = 500 V = 22 A ≤ 270 mΩ Ω VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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22N50P
22N50PS
O-247
PLUS220
IXTQ 22N50P
IXTQ22N50P
22N50
IXTH 22N50P
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26N60P
Abstract: PLUS220SMD
Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 = = RDS on ≤ ≤ trr TO-247 (IXFH) Symbol
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26N60P
26N60PS
O-247
PLUS220SMD
PLUS220
O-268
26N60P
PLUS220SMD
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXGH25N250 IXGT25N250 IXGV25N250S High Voltage IGBT For Capacitor Discharge Applications VCES = 2500 V IC25 = 60 A VCE sat ≤ 2.9 V TO-247 (IXGH) Symbol Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; R
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IXGH25N250
IXGT25N250
IXGV25N250S
O-247
IC110
25N250
5P-P528)
04-27-07-D
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Untitled
Abstract: No abstract text available
Text: VDSS = 600 V ID25 = 18 A Ω RDS on ≤ 420 mΩ IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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18N60P
18N60PS
18N60P
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Untitled
Abstract: No abstract text available
Text: PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement Mode Avalanche Rated RDS on = 500 V = 30 A ≤ 200 mΩ Ω TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR
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30N50P
30N50PS
O-247
30N50P
O-247
PLUS220
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22n60p
Abstract: 22n60 IXTQ22N60P PLUS220SMD
Text: PolarHVTM Power MOSFET IXTQ 22N60P IXTV 22N60P IXTV 22N60PS VDSS ID25 RDS on = 600 V = 22 A ≤ 350 mΩ Ω N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ
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22N60P
22N60PS
22n60p
22n60
IXTQ22N60P
PLUS220SMD
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IXFV110N10P
Abstract: PLUS220SMD 110N10P IXFH110N10P
Text: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 110N10P IXFV 110N10P IXFV 110N10PS VDSS = 100 V ID25 = 110 A Ω RDS on ≤ 15 mΩ ≤ 150 ns trr Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C
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110N10P
110N10PS
110N10P
IXFV110N10P
IXFV110N10P
PLUS220SMD
IXFH110N10P
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IXFV110N25T
Abstract: IXFV110N25TS PLUS220SMD
Text: Preliminary Technical Information IXFV110N25T IXFV110N25TS Trench Gate Power HiperFET VDSS ID25 = 250V = 110A Ω ≤ 24mΩ RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250
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IXFV110N25T
IXFV110N25TS
PLUS220
110N25T
8-11-08-A
IXFV110N25T
IXFV110N25TS
PLUS220SMD
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20N80P
Abstract: S-100F 20N80 C2036 QG SMD TRANS PLUS220SMD ixfh20n80p
Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH IXFT IXFV IXFV VDSS ID25 20N80P 20N80P 20N80P 20N80PS RDS on trr Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ
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20N80P
20N80PS
O-247AD
O-268
PLUS220
PLUS220SMD
3-01-06-A
20N80P
S-100F
20N80
C2036
QG SMD TRANS
PLUS220SMD
ixfh20n80p
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IXTV110N25TS
Abstract: ixth110n25t ixtv110n25 IXTH110 PLUS220SMD 694W
Text: IXTH110N25T IXTV110N25TS Trench Gate Power MOSFET VDSS ID25 RDS on = 250V = 110A Ω ≤ 24mΩ N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH110N25T
IXTV110N25TS
O-247
110N25T
8-11-08-A
IXTV110N25TS
ixth110n25t
ixtv110n25
IXTH110
PLUS220SMD
694W
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26n50
Abstract: IXFH .26n50 PLUS220SMD
Text: PolarHVTM HiPerFET Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ
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26N50P
26N50PS
26n50
IXFH
.26n50
PLUS220SMD
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IXFV22N60PS
Abstract: 22N60P PLUS220SMD IXFV22N60P FS15-12
Text: PolarHVTM HiPerFET Power MOSFETs IXFH 22N60P IXFV 22N60P IXFV 22N60PS VDSS = 600 V ID25 = 22 A RDS on ≤ 350 m Ω ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C
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22N60P
22N60PS
O-247
22N60P
IXFV22N60P
02-17-06-B
IXFV22N60PS
PLUS220SMD
IXFV22N60P
FS15-12
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30N60P
Abstract: 30N60 IXTQ30N60P PLUS220SMD equivalent for 30n60p
Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ
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30N60P
30N60PS
O-268
PLUS220
30N60P
30N60
IXTQ30N60P
PLUS220SMD
equivalent for 30n60p
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96N15
Abstract: 96N15P PLUS220SMD
Text: PolarHTTM HiPerFET Power MOSFET VDSS = 150 V ID25 = 96 A Ω RDS on ≤ 24 mΩ ≤ 200 ns trr IXFH 96N15P IXFV 96N15P IXFV 96N15PS N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings
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96N15P
96N15PS
O-247
96N15P
96N15
PLUS220SMD
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200N10T
Abstract: N mosfet 100v 200A IXTV200N10TS PLUS220SMD
Text: IXTV200N10T IXTV200N10TS TrenchMVTM Power MOSFET VDSS ID25 = 100V = 200A Ω ≤ 5.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 175°C 100 V VDGR T J = 25°C to 175°C, RGS = 1MΩ
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IXTV200N10T
IXTV200N10TS
PLUS220
PLUS220SMD
200N10T
9-30-08-D
N mosfet 100v 200A
IXTV200N10TS
PLUS220SMD
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