TO-3P weight
Abstract: ixys ixfh 30n50p QG SMD TRANS PLUS220SMD 123B16
Text: Advance Technical Information PolarHVTM Power HiPerFET MOSFET VDSS ID25 IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS on trr = 500 V = 30 A Ω = 200 mΩ < 200 ns TO-3P (IXFQ)
|
Original
|
PDF
|
30N50P
30N50PS
PLUS220
TO-3P weight
ixys ixfh 30n50p
QG SMD TRANS
PLUS220SMD
123B16
|
ixys ixfh 30n50p
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM Power HiPerFET MOSFET VDSS ID25 IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS on trr = 500 V = 30 A Ω = 200 mΩ < 200 ns TO-3P (IXFQ)
|
Original
|
PDF
|
30N50P
30N50PS
PLUS220
ixys ixfh 30n50p
|
Untitled
Abstract: No abstract text available
Text: PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement Mode Avalanche Rated RDS on = 500 V = 30 A ≤ 200 mΩ Ω TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR
|
Original
|
PDF
|
30N50P
30N50PS
O-247
30N50P
O-247
PLUS220
|
Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS RDS on trr = 500 V = 30 A ≤ 200 mΩ Ω ≤ 200 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings
|
Original
|
PDF
|
30N50P
30N50PS
O-247
30N50P
O-247
|
DS99415
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTT 30N50P IXTQ 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement ModeAvalanche Rated RDS on = 500 V = 30 A Ω = 200 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings
|
Original
|
PDF
|
30N50P
30N50PS
O-247
O-268
PLUS220
DS99415
|
QG SMD TRANS
Abstract: PLUS220SMD smd diode 819
Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS RDS on trr = 500 V = 30 A ≤ 200 mΩ Ω ≤ 200 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings
|
Original
|
PDF
|
30N50P
30N50PS
O-247
30N50P
O-247
QG SMD TRANS
PLUS220SMD
smd diode 819
|
QG SMD TRANS
Abstract: PLUS220SMD
Text: Advance Technical Information PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTT 30N50P IXTQ 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement ModeAvalanche Rated RDS on = 500 V = 30 A Ω = 200 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings
|
Original
|
PDF
|
30N50P
30N50PS
PLUS220
QG SMD TRANS
PLUS220SMD
|
30N50P
Abstract: 30N50 PLUS220SMD IXTH30N50P to-3p mounting IXTQ30N50P
Text: PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement Mode Avalanche Rated RDS on = 500 V = 30 A ≤ 200 mΩ Ω TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR
|
Original
|
PDF
|
30N50P
30N50PS
O-247
30N50P
O-247
PLUS220
30N50
PLUS220SMD
IXTH30N50P
to-3p mounting
IXTQ30N50P
|
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
|
Original
|
PDF
|
MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
|
