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    30N50P Price and Stock

    Littelfuse Inc IXFH30N50P

    MOSFET N-CH 500V 30A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH30N50P Tube 31 1
    • 1 $9.02
    • 10 $9.02
    • 100 $7.20033
    • 1000 $5.68443
    • 10000 $4.79387
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    Littelfuse Inc IXTQ30N50P

    MOSFET N-CH 500V 30A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTQ30N50P Tube 300
    • 1 -
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    • 1000 $9.50963
    • 10000 $9.50963
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    Littelfuse Inc IXTH30N50P

    MOSFET N-CH 500V 30A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH30N50P Tube 30
    • 1 -
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    • 100 $6.39122
    • 1000 $5.63928
    • 10000 $5.07535
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    Littelfuse Inc IXFT30N50P

    MOSFET N-CH 500V 30A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFT30N50P Tube 300
    • 1 -
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    • 1000 $12.12057
    • 10000 $12.12057
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    IXYS Corporation IXTV30N50P

    MOSFET N-CH 500V 30A PLUS220
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    DigiKey IXTV30N50P Tube
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    Find more 30N50P price and stock on Findchips.com

    30N50P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO-3P weight

    Abstract: ixys ixfh 30n50p QG SMD TRANS PLUS220SMD 123B16
    Text: Advance Technical Information PolarHVTM Power HiPerFET MOSFET VDSS ID25 IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS on trr = 500 V = 30 A Ω = 200 mΩ < 200 ns TO-3P (IXFQ)


    Original     		PDF 30N50P 30N50PS PLUS220 TO-3P weight ixys ixfh 30n50p QG SMD TRANS PLUS220SMD 123B16

    ixys ixfh 30n50p

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power HiPerFET MOSFET VDSS ID25 IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS on trr = 500 V = 30 A Ω = 200 mΩ < 200 ns TO-3P (IXFQ)


    Original     		PDF 30N50P 30N50PS PLUS220 ixys ixfh 30n50p

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 30N50P VDSS ID25 RDS on Electrically Isolated Back Surface = 500 V = 17 A ≤ 225 mΩ Ω N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		PDF 30N50P ISOPLUS220TM E153432 405B2

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement Mode Avalanche Rated RDS on = 500 V = 30 A ≤ 200 mΩ Ω TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR


    Original     		PDF 30N50P 30N50PS O-247 30N50P O-247 PLUS220

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS RDS on trr = 500 V = 30 A ≤ 200 mΩ Ω ≤ 200 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings


    Original     		PDF 30N50P 30N50PS O-247 30N50P O-247

    DS99415

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTT 30N50P IXTQ 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement ModeAvalanche Rated RDS on = 500 V = 30 A Ω = 200 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings


    Original     		PDF 30N50P 30N50PS O-247 O-268 PLUS220 DS99415

    QG SMD TRANS

    Abstract: PLUS220SMD smd diode 819
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS RDS on trr = 500 V = 30 A ≤ 200 mΩ Ω ≤ 200 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings


    Original     		PDF 30N50P 30N50PS O-247 30N50P O-247 QG SMD TRANS PLUS220SMD smd diode 819

    QG SMD TRANS

    Abstract: PLUS220SMD
    Text: Advance Technical Information PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTT 30N50P IXTQ 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement ModeAvalanche Rated RDS on = 500 V = 30 A Ω = 200 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings


    Original     		PDF 30N50P 30N50PS PLUS220 QG SMD TRANS PLUS220SMD

    30N50P

    Abstract: 30N50 PLUS220SMD IXTH30N50P to-3p mounting IXTQ30N50P
    Text: PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement Mode Avalanche Rated RDS on = 500 V = 30 A ≤ 200 mΩ Ω TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR


    Original     		PDF 30N50P 30N50PS O-247 30N50P O-247 PLUS220 30N50 PLUS220SMD IXTH30N50P to-3p mounting IXTQ30N50P

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		PDF IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p