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    Abracon Corporation ASDMB-75.000MHZ-LY-T

    MEMS OSC XO 75.0000MHZ LVCMOS
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    DigiKey ASDMB-75.000MHZ-LY-T Digi-Reel 1,000 1
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    • 100 $3.5089
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    ASDMB-75.000MHZ-LY-T Reel 1,000 1,000
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    ASDMB-75.000MHZ-LY-T Cut Tape 1,000 1
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    Avnet Americas ASDMB-75.000MHZ-LY-T Reel 26 Weeks 1,000
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    Newark ASDMB-75.000MHZ-LY-T Reel 1,000
    • 1 $3.72
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    Avnet Abacus ASDMB-75.000MHZ-LY-T Reel 113 Weeks 1,000
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    Abracon Corporation ASEMB-75.000MHZ-XY-T

    MEMS OSC XO 75.0000MHZ CMOS SMD
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    DigiKey ASEMB-75.000MHZ-XY-T Cut Tape 298 1
    • 1 $4.55
    • 10 $3.522
    • 100 $3.2062
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    ASEMB-75.000MHZ-XY-T Digi-Reel 298 1
    • 1 $4.55
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    Avnet Americas ASEMB-75.000MHZ-XY-T Reel 26 Weeks 1,000
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    Newark ASEMB-75.000MHZ-XY-T Cut Tape 1,000
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    ASEMB-75.000MHZ-XY-T Reel 1,000
    • 1 $3.7
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    Avnet Abacus ASEMB-75.000MHZ-XY-T Reel 113 Weeks 1,000
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    Abracon Corporation ASDMB-75.000MHZ-XY-T

    MEMS OSC XO 75.0000MHZ LVCMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ASDMB-75.000MHZ-XY-T Reel 1,000
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    • 1000 $3.21885
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    ASDMB-75.000MHZ-XY-T Cut Tape 1
    • 1 $4.9
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    ASDMB-75.000MHZ-XY-T Digi-Reel 1
    • 1 $4.9
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    Avnet Americas ASDMB-75.000MHZ-XY-T Reel 26 Weeks 1,000
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    Newark ASDMB-75.000MHZ-XY-T Cut Tape 1,000
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    • 1000 $3.76
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    Abracon Corporation ASDMB-75.000MHZ-EC-T

    MEMS OSC XO 75.0000MHZ LVCMOS
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    DigiKey ASDMB-75.000MHZ-EC-T Reel 1,000
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    • 1000 $1.98744
    • 10000 $1.98744
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    ASDMB-75.000MHZ-EC-T Cut Tape 1
    • 1 $2.96
    • 10 $2.96
    • 100 $2.96
    • 1000 $2.96
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    ASDMB-75.000MHZ-EC-T Digi-Reel 1
    • 1 $2.96
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    Avnet Americas ASDMB-75.000MHZ-EC-T Reel 26 Weeks 1,000
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    Newark ASDMB-75.000MHZ-EC-T Reel 1,000 1,000
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    RS ASDMB-75.000MHZ-EC-T Bulk 26 Weeks 1,000
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    Master Electronics ASDMB-75.000MHZ-EC-T
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    • 10 $3.68
    • 100 $3.57
    • 1000 $1.68
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    Abracon Corporation ASFLMB-75.000MHZ-LR-T

    MEMS OSC XO 75.0000MHZ LVCMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ASFLMB-75.000MHZ-LR-T Cut Tape 1
    • 1 $2.79
    • 10 $2.79
    • 100 $2.79
    • 1000 $2.79
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    ASFLMB-75.000MHZ-LR-T Digi-Reel 1
    • 1 $2.79
    • 10 $2.79
    • 100 $2.79
    • 1000 $2.79
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    ASFLMB-75.000MHZ-LR-T Reel 1,000
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    • 1000 $1.83258
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    Avnet Americas ASFLMB-75.000MHZ-LR-T Reel 26 Weeks 1,000
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    • 1000 $1.52433
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    Newark ASFLMB-75.000MHZ-LR-T Reel 1,000
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    • 1000 $2.05
    • 10000 $1.62
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    MB750 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MB-7500 Matra-Harris Semiconductor MB GATE ARRAY SERIES 2u/2 METAL LAYERS Scan PDF

    MB750 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HYM581000M

    Abstract: No abstract text available
    Text: HYUNDAI ELECTRONICS SIE Mb750flß □ □ □ □ T I S IHYNK 2TG HYM581000 •Ï2YUNDA SEMICONDUCTO D . im 4L-. -. 1\ I X 8-Bit C M O s DRAM MODI 1.1 M431201B-OCT91 DESCRIPTION The HYM581000M is a 1M words by 8bits dynamic RAM module and consists o f eight


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    PDF Mb750flß HYM581000 M431201B-OCT91 HYM581000M HY531000J 22fiF 7777777r/ 4b75Dfl HYM581000

    534256

    Abstract: IRC20
    Text: yundai electronics 51E » Mb750ûfi Q G O O b b B 500 • H Y N K T - 4 ^ 3 - •HYUNDA i 7 HY534256 SEMICONDUCTOI 2-«.k l-liii I M ds | K\M M 1 8 1 2 0 2 B -JA N 9 2 DESCRIPTION The HY534256 is a high speed, low power 262,144 X4 bit CMOS dynamic random access


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    PDF Mb750 HY534256 T--46-- 534256 IRC20

    Untitled

    Abstract: No abstract text available
    Text: HY514100B Series •HYUNDAI 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY514100B HY514100B 4b750Ã 000413b 1AC09-10-MAY95 HY514100BJ HY514100BLJ

    Untitled

    Abstract: No abstract text available
    Text: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY5117400A HY5117400A 117400A 1AD27-10-MAY9S HY5117400AJ HY5117400AT Y5117400ASLT HY5117400AR

    Untitled

    Abstract: No abstract text available
    Text: • { H Y U N D A HY62V256 Series I 32K X 8-bit CMOS SRAM DESCRIPTION The HV62V256 is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V256 has a data retention mode that guarantees


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    PDF HY62V256 HV62V256 55/70/85/100ns 100/120/150ns 1DC03-11-MAY95 HY62V256LP HY62V256LJ

    Untitled

    Abstract: No abstract text available
    Text: «HYUNDAI H Y 5 1 1 7 1 O O A S e r ie s 1 6 M x 1 - b it CM O S DRAM DESCRIPTION The HY5117100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY5117100A HY5117100A HY5117100Ato tRASI13) 1RP02) 1AD20-10-MAY94 HY51171OOA HY5117100AJ

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22p.F decoupling capacitor is mounted for


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    PDF HYM581600 HY5116100 HYM581600M/LM/TM/LTM HYM581600TM/LTM 1BD01-00-MAY93 HYM581600M HYM581600LM HYM581600TM

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y SEMICONDUCTOR 514100A S e rie s 4M x 1-bit CMOS DRAM DESCRIPTION The HY514100A is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HV514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


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    PDF 14100A HY514100A HV514100A 1AC06-20-APR93 4b75DÃ HY514100AJ HY514100AU HY514100AT

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 1 6 1 O O A •HYUNDAI S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY51161 OOA is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51161 OOA utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY51161 HY5116100Ato 9-10-MAY94 HY5116100A HY5116100AJ HY5116100ASU HY5116100AT HY51161OOASLT HY5116100AR

    Untitled

    Abstract: No abstract text available
    Text: ^HYUNDAI HYM564224A R-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY5118164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 ¡aF and


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    PDF HYM564224A 64-bit HY5118164B HYM564224ARG/ATRG/ASLRG/ASLTRG 22SI5 Mb750flfl 1CE16-10-APR96

    Untitled

    Abstract: No abstract text available
    Text: » « H Y U N D A I e r ie s 1M x 4H_bŸjt 5C1M40 S4 0D R3 ABM Sw ,th 4C A S PRELIMINARY DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CSSO controls DQO,


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    PDF 5C1M40 HY514403B 1AC15-00-MAY94 4b750fi6 HY514403BJ HY514403BU

    Untitled

    Abstract: No abstract text available
    Text: HY62256B-I Series “H Y U N D A I 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


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    PDF HY62256B-I 05-11-MAY95 Mb75Dflfi HY62256BLP-I HY62256BLLP-I HY62256BU-I

    Untitled

    Abstract: No abstract text available
    Text: "HYUNDAI HYM532220A W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mourtted for


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    PDF HYM532220A 32-bit HY5118160B HYM532220AW/SLW/TW/SLTW HYM532220AWG/SLWG 880mW 825mW 70MIN.

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 6 7 V 1 8 1 0 0 /1 0 1 64K X 18 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst ad­ dress counter and pipelined output. All synchronous inputs pass through registers controlled by a positiveedge triggered clock K .


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    PDF 486/Pentium 7ns/12ns/17ns 67MHz 486/Pent 00DbSS3 1DH02-22-MAY95 HY67V18100/101 HY67V18100C

    Untitled

    Abstract: No abstract text available
    Text: HY51V16100B Series -HYUNDAI 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques


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    PDF HY51V16100B 4b750flà 1AD43-00-MAY95 QQ04374 HY51V16100BJ HY51V16100BSU

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 4 4 0 0 S e r ie s 1 M x 4-bit C M O S D R A M • • H Y U N D A I DESCRIPTION Hie HY514400 is the new generation and fast dynamic RAM organized 1,048,576 x 4 bits. The HY514400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating


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    PDF HY514400 1AC02-30-MAY94 4b750flfl DG0244T 8700M 9060f7 1AC02-30-M

    HY62256A

    Abstract: hyundai HY62256AJ55
    Text: HY62256A Series • H Y U N D A I 32Kx 8-bit CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


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    PDF HY62256A 55/70/85/100ns HY6264A-I HY62256AP HY62256ALP HY62256ALLP HY62256AJ hyundai HY62256AJ55

    Untitled

    Abstract: No abstract text available
    Text: u v H u n i a 8Mx8 bit Synchronous DRAM Series m /3 Y U N U A I HY57V648010/ HY57V648020/ HY57V658010/ HY57V658020 HY57V648011/ HY57V648021/ HY57V6S8011/ HY57V658021 PRELIMINARY DESCRIPTION HY57V648010 description and pinout, offering fully synchronous operation. All address, data and control inputs are


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    PDF HY57V648010/ HY57V648020/ HY57V658010/ HY57V658020 HY57V648011/ HY57V648021/ HY57V658011/ HY57V658021 HY57V648010 HY57V648020

    LD33

    Abstract: ld33 c LD33 F LD33 V HY6264ALP70 LD33 e LD33 voltage 1DB01 HY6264ALJ-70 Hy6264alp-70
    Text: HY6264A Series ‘H YU N D AI 8 K x 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits C M O S static R A M fabricated using Hyundai's high performance twin tub C M O S process technology. This high reliability process coupled with innovative circuit


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    PDF HY6264A 70/85/100/120ns 330mil 1270J 1DB01-11-MAY95 HY6264AP LD33 ld33 c LD33 F LD33 V HY6264ALP70 LD33 e LD33 voltage 1DB01 HY6264ALJ-70 Hy6264alp-70

    HYM5V64414

    Abstract: HV51V17404A HYM5V64414AC
    Text: -HYUNDAI HYM5V64414A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE -with EXTENDED DATA OUT DESCRIPTION TheHYM5V64414A is a 4M x 64-bit EDO m ode CMOS DRAM mod ule consisting of sixteen HY51V17404A in 24/26


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    PDF HYM5V64414A 64-bit HV51V17404A HYM5V64414AKG/ATKG/ASLKG/ASLTKG OOS4CI13> GDDSR31 6-10-APR9S HYM5V64414 HYM5V64414AC

    MB-7500

    Abstract: 130 nm CMOS standard cell library ST
    Text: Mrüll electronic June 1992 ASIC HI-REL DATA SHEET MB GATE ARRAY SERIES - 2\U2 METAL LAYERS MB 850 - MB 1300 - MB 2000 - MB 2700 - MB 3200 MB 4000 - MB 5000 - MB 6600 - MB 7500 FEATURES ADVANCED SILICON GATE CMOS PROCESS : - two metal level - 2 micron drawn channel length


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    PDF 5flbfl45b MB-7500 130 nm CMOS standard cell library ST

    Untitled

    Abstract: No abstract text available
    Text: • • H Y U N D A I H Y M 5 9 4 0 0 0 B M -S e r ie s 4M * 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22jiF decoupling


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    PDF HYM594000B HY5117400 HY514100A 22jiF HYM594000BM/BLM 1BC06-11-MAR94 50fifi

    Untitled

    Abstract: No abstract text available
    Text: -HYUNDAI HYM536A814B M-Series 8M X 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A814B is a 8M x 36-bit EDO mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 iiF and 0.01 nFdecoupling capacitors are mounted


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    PDF HYM536A814B 36-bit HY5117404B HYM536A814BM/BSLM HYM536A814BMG/BSLMG 012SQ171MN 1CF15-10-FEBM

    Untitled

    Abstract: No abstract text available
    Text: HY234000 Series -H Y U N D A I 512K X 8-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY234000 is a 4Mbit mask-programmable ROM organized as 524,288 x8bit. It is fabricated using HYUNDAI’S advanced CMOS process technology. The HY234000 operates with a 5V power supply and all inputs are i n ­


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    PDF HY234000 120ns 525mil HY234000P-XXX HY234000G-XXX