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    Abstract: No abstract text available
    Text: N AMER PHI LIP S/ DIS CR ETE j DhE D • PowerMOS transistor bbEBTBl 0014615 5 ■ BUZ155 T- 3V' 13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    PDF BUZ155 T0218AA; T-39-13 bb53T31 0014fl21 BUZ355