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    MBR180 Price and Stock

    Diodes Incorporated MBR180S1-7

    DIODE SCHOTTKY 80V 1A SOD123
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    DigiKey MBR180S1-7 Reel 48,000 3,000
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    MBR180S1-7 Cut Tape 2,717 1
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    MBR180S1-7 Digi-Reel 1
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    Avnet Americas MBR180S1-7 Reel 231,000 8 Weeks 3,000
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    Mouser Electronics MBR180S1-7 12,274
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    Arrow Electronics MBR180S1-7 24,000 8 Weeks 3,000
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    Newark MBR180S1-7 Cut Tape 5,739 5
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    TME MBR180S1-7 1,805 1
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    Avnet Asia MBR180S1-7 8 Weeks 12,000
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    Avnet Silica MBR180S1-7 57,000 10 Weeks 3,000
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    New Advantage Corporation MBR180S1-7 6,000 1
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    Microchip Technology Inc MBR18045E3/TU

    DIODE SCHOTTKY 18A 45V TO-220AC
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    DigiKey MBR18045E3/TU Tube 2,000
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    Avnet Americas MBR18045E3/TU Bulk 20 Weeks 2,000
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    Newark MBR18045E3/TU Bulk 2,000
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    Microchip Technology Inc MBR18045E3/TU
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    Onlinecomponents.com MBR18045E3/TU
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    NAC MBR18045E3/TU Tray 2,000
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    EBV Elektronik MBR18045E3/TU 21 Weeks 2,000
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    Master Electronics MBR18045E3/TU
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    PanJit Group MBR180_R2_00001

    SCHOTTKY BARRIER RECTIFIERS
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    DigiKey MBR180_R2_00001 Reel 60,000
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    MBR180_R2_00001 Cut Tape 1
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    PanJit Semiconductor MBR180_B0_00001

    Schottky Diodes & Rectifiers 80V Schottky 1A
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    PanJit Semiconductor MBR180_B0_10001

    Schottky Diodes & Rectifiers 80V Schottky 1A
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    Find more MBR180 price and stock on Findchips.com

    MBR180 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MBR180 Motorola Switchmode Datasheet Scan PDF
    MBR180S1-7 Diodes Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 80V 1A SOD123 Original PDF

    MBR180 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


    Original     		PDF ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA

    MBR140P

    Abstract: 1N5819 SS14 1N5822 SS34 mbr370 MBR170 1N5822 ss24 motorola SB5100 CROSS REFERENCE LIST MBR30050CT MBR180
    Text: Schottky Cross Reference List FAIRCHILD SEMI 1N5818 1N5819 1N5822 BAT54 BAT54A BAT54C BAT54S FMKA140 FMKA140 FYP1504DN FYP2004DN FYP2006DN MBR1035 MBR1045 MBR1535CT MBR1545CT MBR1635 MBR1645 MBR2035CT MBR2045CT MBR2060CT MBR2535CT MBR2545CT MBR3035PT MBR3045PT


    Original     		PDF 1N5818 1N5819 1N5822 BAT54 BAT54A BAT54C BAT54S FMKA140 FYP1504DN MBR140P 1N5819 SS14 1N5822 SS34 mbr370 MBR170 1N5822 ss24 motorola SB5100 CROSS REFERENCE LIST MBR30050CT MBR180

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    Untitled

    Abstract: No abstract text available
    Text: MBR140~MBR1200 SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts 1.0 Amperes CURRENT DO-41 Unit: inch mm FEATURES • Plastic package has Underwriters Laboratory .034(.86) 1.0(25.4)MIN. Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound.


    Original     		PDF MBR140 MBR1200 DO-41 MIL-S-19500/228 2002/95/EC DO-41 MIL-STD-750 0-60V 0-100V

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


    Original     		PDF MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


    Original     		PDF MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		PDF MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    BA159 equivalent

    Abstract: B80C1500-1000 BYS26-45 equivalent sb5100 B380C2000/1500 1N5048 BYX55-350 BYS21-45 BYX55-600 SMB358
    Text: Typen - Vergleichsliste Typ Diotec 1A01/G 1A02/G 1A03/G 1A04/G 1A05/G 1A06/G 1N5059 1N5059 1N5059 1N5060 1N5061 1N5062 6A05/G 6A10/G 6A20/G 6A40/G 6A60/G 6A80/G 6A100/G Fam. R R R R R R P600A P600B P600D P600G P600J P600K P600M R R R R R R R 1B005 1B01 1B02


    Original     		PDF 1A01/G 1A02/G 1A03/G 1A04/G 1A05/G 1A06/G 1N5059 1N5060 BA159 equivalent B80C1500-1000 BYS26-45 equivalent sb5100 B380C2000/1500 1N5048 BYX55-350 BYS21-45 BYX55-600 SMB358

    U840 diode motorola

    Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
    Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in


    Original     		PDF DL151/D Nov-2000 r14525 U840 diode motorola motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001

    BYS26-45

    Abstract: KYZ72/35 tra0103 FBU4K SMB358 BYS21-45 FBU4G B40C1500-1000 BYS21-90 HD84K
    Text: Diotec - Cross Reference Diotec Part 1.5KE100A 1.5KE100A 1.5KE100A 1.5KE10A 1.5KE10A 1.5KE10A 1.5KE110A 1.5KE110A 1.5KE110A 1.5KE11A 1.5KE11A 1.5KE11A 1.5KE120A 1.5KE120A 1.5KE120A 1.5KE12A 1.5KE12A 1.5KE12A 1.5KE130A 1.5KE130A 1.5KE130A 1.5KE13A 1.5KE13A


    Original     		PDF 5KE100A 5KE10A 5KE110A 5KE11A BYS26-45 KYZ72/35 tra0103 FBU4K SMB358 BYS21-45 FBU4G B40C1500-1000 BYS21-90 HD84K

    mr852

    Abstract: DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534
    Text: MBRM120LT3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120LT3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mr852 DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534

    MUR420 diode

    Abstract: MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference
    Text: MBRM140T3 Advance Information Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal


    Original     		PDF MBRM140T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR420 diode MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference

    diode A14A surface mount

    Abstract: SES5001 diode A14F diode mur120 equivalent diode diode A14A surface APPLICATION DIODE 1N5406 BC 536 PR3002 diode MBRD360 6A10 BL diode
    Text: MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT MBRD620CT, MBRD640CT and MBRD660CT are Preferred Devices SWITCHMODE Power Rectifiers http://onsemi.com DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling


    Original     		PDF MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT MBRD640CT MBRD660CT VHE205 VHE210 diode A14A surface mount SES5001 diode A14F diode mur120 equivalent diode diode A14A surface APPLICATION DIODE 1N5406 BC 536 PR3002 diode MBRD360 6A10 BL diode

    MBR170

    Abstract: BR-1100 BR190
    Text: MOTOROLA Order this document by MBR170/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifiers MBR170 MBR180 MBR190 MBR1100 . . employing the Schottky Barrier principle in a large area m etal-to-silicon power diode. S tate-of-the-art geometry features epitaxial construction with oxide passiva­


    OCR Scan     		PDF MBR170/D MBR170 MBR180 MBR190 MBR1100 MBR1100 1-80CM41-2447 BR-1100 BR190

    mbr170

    Abstract: No abstract text available
    Text: MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA M BR170 M BR180 M BR190 MBR1100 A x ia l Lead R e ctifie rs . . employing the Schottky Barrier principle in a large area m etal-to-silicon power diode. State-of-the-art geom etry features epitaxial construction with oxide passivation and metal


    OCR Scan     		PDF BR170 BR180 BR190 MBR1100 MBR1100 mbr170