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    1N5059 Price and Stock

    Vishay Semiconductors 1N5059TR

    DIODE AVALANCHE 200V 2A SOD57
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    DigiKey 1N5059TR Reel 35,000 5,000
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    • 10000 $0.165
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    1N5059TR Cut Tape 8,089 1
    • 1 $0.58
    • 10 $0.499
    • 100 $0.3466
    • 1000 $0.21998
    • 10000 $0.19665
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    Vishay Semiconductors 1N5059GP-E3/54

    DIODE GEN PURP 200V 1A DO204AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1N5059GP-E3/54 Reel 20,000 4,000
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    1N5059GP-E3/54 Cut Tape 7,790 1
    • 1 $0.44
    • 10 $0.373
    • 100 $0.2594
    • 1000 $0.17562
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    Diotec Semiconductor AG 1N5059

    DIODE GEN PURP 200V 2A DO204AC
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    DigiKey 1N5059 Bulk 4,000 1
    • 1 $0.18
    • 10 $0.162
    • 100 $0.0881
    • 1000 $0.03697
    • 10000 $0.02834
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    Mouser Electronics 1N5059 10,121
    • 1 $0.19
    • 10 $0.156
    • 100 $0.087
    • 1000 $0.045
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    Onlinecomponents.com 1N5059
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    TME 1N5059 4,300 25
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    • 100 $0.0296
    • 1000 $0.0233
    • 10000 $0.0186
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    NTE Electronics Inc 1N5059

    DIODE DO15 200V 2A 150C
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    DigiKey 1N5059 Bag 1,616 10
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    • 10 $0.54
    • 100 $0.448
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    Onlinecomponents.com 1N5059 154
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    • 100 $0.641
    • 1000 $0.498
    • 10000 $0.445
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    Master Electronics 1N5059 154
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    • 100 $0.641
    • 1000 $0.498
    • 10000 $0.445
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    Vishay Semiconductors 1N5059TAP

    DIODE AVALANCHE 200V 2A SOD57
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1N5059TAP Ammo Pack 25,000
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    Find more 1N5059 price and stock on Findchips.com

    1N5059 Datasheets (59)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1N5059 Changzhou Galaxy Electrical DIODE FAST RECOVERY RECTIFIER 200V 1A 2 pin DO-41 Original PDF
    1N5059 Diotec Silicon Rectifiers Original PDF
    1N5059 General Semiconductor Rectifier Diode, Standard Recovery Rectifier, Single, 200V, SOD-57, 2-Pin Original PDF
    1N5059 General Semiconductor GLASS PASSIVATED JUNCTION RECTIFIER Original PDF
    1N5059 Philips Semiconductors Controlled Avalanche Rectifier Original PDF
    1N5059 Philips Semiconductors High-speed diodes Original PDF
    1N5059 Semikron Diode, 2A, 200V, Silicon Diode Original PDF
    1N5059 Semikron Standard silicon rectifier diode Original PDF
    1N5059 Taitron Components Rectifier Diode, Single, 200V, SOD-57, 2-Pin Original PDF
    1N5059 Vishay Semiconductors Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:200V; Forward Current Avg Rectified, IF(AV):2A; Non Repetitive Forward Surge Current Max, Ifsm:50A; Forward Voltage Max, VF:1.15V; Package/Case:DO-204 Original PDF
    1N5059 Vishay Telefunken Silicon Mesa Rectifiers Original PDF
    1N5059 Central Semiconductor GLASS PASSIVATED RECTIFIER 2.5 AMPS, 200-1000 VOLTS JEDEC DO-204 AP CASE Scan PDF
    1N5059 Central Semiconductor DIODE ULTRA FAST RECOVERY RECTIFIER 200V 1A 2GPR-1A Scan PDF
    1N5059 Dionix General Purpose Axial Lead Silicon Rectifier Scan PDF
    1N5059 General Electric Semiconductor Data Handbook 1977 Scan PDF
    1N5059 General Electric Semiconductor Data Book 1971 Scan PDF
    1N5059 General Instrument Short Form Data 1976 Short Form PDF
    1N5059 General Instrument Semiconductors and Electronic Components 1971 Scan PDF
    1N5059 General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Rectifiers and Voltage Suppressors Scan PDF
    1N5059 Harris Semiconductor 1A, 200V - 800V Diodes Scan PDF

    1N5059 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N5062

    Abstract: No abstract text available
    Text: BL GALAXY ELECTRICAL 1N5059-1N5062 VOLTAGE RANGE: 200 - 800 V CURRENT: 1.0 A FAST RECOVERY RECTIFIER FEATURES DO - 41 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol


    Original     		PDF 1N5059---1N5062 DO-41 STD-750 1N5062

    1n5062g

    Abstract: DO-204AC JESD22-B102D J-STD-002B 1N5059GP 1N5062GP
    Text: 1N5059GP thru 1N5062GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation


    Original     		PDF 1N5059GP 1N5062GP MIL-S-19500 DO-204AC DO-15) 2002/95/EC 2002/96/EC 08-Apr-05 1n5062g DO-204AC JESD22-B102D J-STD-002B 1N5062GP

    1N5059

    Abstract: 1N5060 1N5061 1N5062 DO-204AP
    Text: 1N5059 THRU 1N5062 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1. 0 Ampere * D TE FEATURES ♦ High temperature metallurgically bonded construction ♦ 1.0 Ampere operation at TA=75°C with no thermal runaway ♦ Typical IR less than 0.1µA


    Original     		PDF 1N5059 1N5062 MIL-S-19500 DO-204AP DO-204AP 50mVp-p 1N5060 1N5061 1N5062

    1N5062 diode

    Abstract: 1N5060 1N5061 1N5061 vishay
    Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading


    Original     		PDF 1N5059, 1N5060, 1N5061 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 1N5059 1N5060 1N5062 diode 1N5061 vishay

    1n5062 equivalent

    Abstract: 1N5059 diode 1N5059 1N5060 1N5061 1N5062 BYW52 BYW53 BYW54 BYW55
    Text: BYW52.BYW56 Silicon Mesa Rectifiers Features D D D D D D Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Electrically equivalent diodes: BYW52 – 1N5059 BYW53 – 1N5060


    Original     		PDF BYW52. BYW56 BYW52 1N5059 BYW53 1N5060 BYW54 1N5061 BYW55 1N5062 1n5062 equivalent 1N5059 diode 1N5060 1N5062 BYW52 BYW53 BYW54 BYW55

    DIODE 1N5060

    Abstract: 1n5060v 1N5060 Sinterglass 1N5061 1N5059 1N5062 diode 1n5059 MIL-STD-750 METHOD 2026 1n5060 diode
    Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading


    Original     		PDF 1N5059, 1N5060, 1N5061 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 18-Jul-08 DIODE 1N5060 1n5060v 1N5060 Sinterglass 1N5059 1N5062 diode 1n5059 MIL-STD-750 METHOD 2026 1n5060 diode

    1n5060

    Abstract: 1N5062 1N5061 1N5059
    Text: 1N5059 1N5060 1N5061 1N5062 w w w. c e n t r a l s e m i . c o m GLASS PASSIVATED SILICON RECTIFIER 1 AMP, 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passivated package,


    Original     		PDF 1N5059 1N5060 1N5061 1N5062 CPR1-010 1N5060 1N5062

    1n5060

    Abstract: 1N5062 diode 1N5061 DIODE 1N5060 1N506
    Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading


    Original     		PDF 1N5059, 1N5060, 1N5061 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 1N5059 1N5060 1N5062 diode DIODE 1N5060 1N506

    1n5062 equivalent

    Abstract: 1N5059 1N5060 1N5061 1N5062 BYW52 BYW53 BYW54 BYW55 BYW56
    Text: BYW52.BYW56 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Controlled avalanche characteristics D Glass passivated junction D Hermetically sealed package D Low reverse current D High surge current loading D Electrically equivalent diodes: BYW52 – 1N5059 BYW53 – 1N5060


    Original     		PDF BYW52. BYW56 BYW52 1N5059 BYW53 1N5060 BYW54 1N5061 BYW55 1N5062 1n5062 equivalent 1N5060 1N5062 BYW52 BYW53 BYW54 BYW55 BYW56

    1N5060GP

    Abstract: No abstract text available
    Text: 1N5059GP THRU 1N5062GP Glass Passivated Junction Rectifier Reverse Voltage 200 to 800 V Forward Current 1.0 A DO-204AC DO-15 Features 0.034 (0.86) 1.0 (25.4) MIN. 0.028 (0.71) DIA. * d e t n e t a P 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA.


    Original     		PDF 1N5059GP 1N5062GP DO-204AC DO-15) MIL-S-19500 50mVp-p 1N5060GP

    Untitled

    Abstract: No abstract text available
    Text: BYW52.BYW56 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D D Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Electrically equivalent diodes: BYW52 – 1N5059


    Original     		PDF BYW52. BYW56 BYW52 1N5059 BYW53 1N5060 BYW54 1N5061 BYW55 1N5062

    Untitled

    Abstract: No abstract text available
    Text: 1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current


    Original     		PDF 1N5059, 1N5060, 1N5061, 1N5062 OD-57 MIL-STD-750, 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    1N5059

    Abstract: 1N5062 1N5060 1N5061
    Text: BL GALAXY ELECTRICAL 1N5059-1N5062 VOLTAGE RANGE: 200-800 V CURRENT: 2.0 A PLASTIC SILICON RECTIFIER FEATURES Low cos t Diffus ed junction Glass passivated chips Low forward voltage drop High crrent capability Eas ily cleaned with Freon,Alcohol, ls opropand


    Original     		PDF 1N5059---1N5062 DO-15, 39gram 1N5059 1N5062 1N5060 1N5061

    1n5060v

    Abstract: iSO 15765 1N5059 1N5060 1N5061 1N5062 Diode 1N5062 1N5059 diode
    Text: 1N5059 to 1N5062 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope


    Original     		PDF 1N5059 1N5062 OD-57 MIL-STD-750, 1N5059 OD-57 1N5060 1N5061 D-74025 1n5060v iSO 15765 1N5060 1N5061 1N5062 Diode 1N5062 1N5059 diode

    Untitled

    Abstract: No abstract text available
    Text: 1N5059GP, 1N5060GP, 1N5061GP, 1N5062GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction


    Original     		PDF 1N5059GP, 1N5060GP, 1N5061GP, 1N5062GP 22-B106 DO-204AC DO-15) AEC-Q101 2002/95/EC. 2002/95/EC

    1N5062

    Abstract: 1N5059 1N5060 1N5061
    Text: 1N5059 1N5060 1N5061 1N5062 w w w. c e n t r a l s e m i . c o m GLASS PASSIVATED SILICON RECTIFIERS 1.0 AMP, 200 THRU 800 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passivated package, designed for general


    Original     		PDF 1N5059 1N5060 1N5061 1N5062 CPR1-010 1N5060 1N5062

    Untitled

    Abstract: No abstract text available
    Text: Rectifiers, General purpose Continued Io (AMPS) 1.5 1.0 @ TA (°C) 75 55 75 70 75 IFSM (AMPS) 50 50 50 50 50 / I CASE DO-41 GPR-1A VRRM (VOLTS) 50 1N5391 100 200 1N5059 1N5614 CPR1-010 1N5392 CR1-010 CPR1-020 1N5393 CR1-020 300 400 1N5394 1N5060 CPR1-040


    OCR Scan     		PDF DO-41 1N5391 CPR1-010 1N5059 CR1-010 CPR1-020 1N5614 1N5392 1N5393 CR1-020

    Untitled

    Abstract: No abstract text available
    Text: 1N5059GPTHRU 1N5062GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1 . 0 Ampere DO-2Q4AC FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically


    OCR Scan     		PDF 1N5059GPTHRU 1N5062GP MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: 1N5059 THRU 1N5062 MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER Voltage - 200 to 800 Volts Current- 1.0 Ampere FEATURES ♦ High temperature metallurgical^ bonded con­ structed rectifiers ♦ 1.0 Ampere oper­ ation at Ta=75°C with no thermal runaway 'f e


    OCR Scan     		PDF 1N5059 1N5062 D0-204AP MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: 1N5059GPTHRU 1N5062GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1.0 Ampere DO-2Q4AC S FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgical^


    OCR Scan     		PDF 1N5059GPTHRU 1N5062GP MIL-S-19500 1N5059GFTHRU

    1ns061

    Abstract: No abstract text available
    Text: 1N5059GP THRU 1N5062GP MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER Voltage - 200 to 800 Volts Current - 1.0 Ampere FEATURES ♦ High temperature metallurgically bonded con­ structed rectifiers ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0


    OCR Scan     		PDF 1N5059GP 1N5062GP 1N5059 1N5062 DO-15 MIL-S-19500 1ns061

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL SEMICONDUCTOR, INC . 1N5059 thru 1N5062 M INIATURE GLASS PASSIVATED SILICON RECTIFIERS VOLTAGE - 200 TO 800 Volts CURRENT - 1.0 Ampere MECHANICAL DATA FEATURES C a s e : One piece glass, h e rm e tic a lly sealed • G lass Passivated cavity-free junction


    OCR Scan     		PDF 1N5059 1N5062 b-2233 1N5059

    In5062

    Abstract: in5061 1N5062 1N5061 1N5060 1n5059 harris JEDEC do-204 1N5059
    Text: HARRIS SEniCON» SECTOR iü l H iMJ bôE D m 43Dgg71 UÜ5Q3QS 414 • 1N5059, 1N5060 1N5061, 1N5062 a r r is SE.COHOUCTO» 1A, 200V - 800V DÌOdeS December 1993 Package Features • JEDEC STYLE D0-204 TOP VIEW Hlgh-Temperature Metallurglcally Bonded, No Com­


    OCR Scan     		PDF 43Dgg71 1N5059, 1N5060 1N5061, 1N5062 MIL-STD-19500 C/10a/ 1N5060, In5062 in5061 1N5062 1N5061 1N5060 1n5059 harris JEDEC do-204 1N5059

    Untitled

    Abstract: No abstract text available
    Text: 1N5059 THRU 1N5062 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1.0 Ampere FEATURES DO-2Q4AP ♦ High temperature metallurgical^ bonded construction ♦ 1.0 Ampere operation atTA=75°C with no thermal runaway ♦ Typical Ir less than 0.1 jaA


    OCR Scan     		PDF 1N5059 1N5062 MIL-S-19500 D0-204AP