Untitled
Abstract: No abstract text available
Text: KMM364Ë224AJ DRAM MODULE KMM364E224AJ Fast Page with EDO Mode 2Mx64 DRAM DIMM based on 1M x 1 6 ,1 K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364F224AJ is a 2M bit X 64 Dynamic RAM high density memory module. The Samsung KMM364E224AJ consists of eight CMOS
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OCR Scan
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KMM364Ã
224AJ
KMM364E224AJ
2Mx64
KMM364F224AJ
1Mx16bit
44-pin
400mil
48pin
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PDF
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Untitled
Abstract: No abstract text available
Text: KM416C1204A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: KM416C1204A-6/A-L6/A-F6 tRAC tCAC tRC tHPC 60ns 17ns 110ns 24ns KM416C1204A-7/A-L7/A-F7 70ns 20ns 130ns 29ns KM416C1204A-8/A-L8/A-F8
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OCR Scan
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KM416C1204A/A-L/A-F
KM416C1204A-6/A-L6/A-F6
110ns
KM416C1204A-7/A-L7/A-F7
130ns
KM416C1204A-8/A-L8/A-F8
150ns
cycle/16m
cycle/128msCLE
71b4142
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PDF
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km416c1204aj
Abstract: No abstract text available
Text: DRAM MODULE KMM5322204AW/AWG KMM5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322204AW is a 2M bit x 32 • Part Identification Dynam ic RAM high density m em ory module. The
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OCR Scan
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KMM5322204AW/AWG
KMM5322204AW/AWG
2Mx32
1Mx16
KMM5322204AW
KMM5322204AW
cycles/16ms
5322204AW
1Mx16bit
42-pin
km416c1204aj
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5362205AW/AWG KMM5362205AW/AWG Fast Page with EDO Mode 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM G ENERAL DESCRIPTIO N FEATURES The Samsung KMM5362205AW is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362205AW consists of four CMOS
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OCR Scan
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KMM5362205AW/AWG
KMM5362205AW/AWG
2Mx36
KMM5362205AW
1Mx16
42-pin
KMM5362205AW
cycles/16ms
24-pin
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PDF
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KM416C1204AJ
Abstract: km416c1204a 1076 GE
Text: CMOS DRAM KM416C1204A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1204A/A-L/A-F is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance
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OCR Scan
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KM416C1204A/A-L/A-F
KM416C1204A-6/A-L6/A-F6
KM416C1204A-7/A-L7/A-F7
KM416C1204A-8/A-L8/A-F8
110ns
130ns
150ns
KM416C1204A/A-L/A-F
KM416C1204AJ
km416c1204a
1076 GE
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PDF
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km416c1204a
Abstract: km416c1204aj
Text: DRAM MODULE KMM5321204AW/AWG KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIMM, 5V, 1K Refresh using 1M x 16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification - KMM5321204AW {1024 cycles/16 ms Ref, SOJ, Solder
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OCR Scan
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M5321204A
KMM5321204AW/AWG
1Mx32
KMM5321204AW
KMM5321
204AW
1Mx16bit
42-pin
72-pin
km416c1204a
km416c1204aj
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM5321204AW ELECTRONICS DRAM Module KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIM M , 5V, 1K Refresh using 1M x 16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321204AW consists of two CMOS
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OCR Scan
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KMM5321204AW
KMM5321204AW/AWG
1Mx32
KMM5321204AW
1Mx16bit
42-pin
72-pin
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PDF
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km416c1204aj
Abstract: 9-14110 KMM5362205AWG
Text: DRAM MODULE KMM5362205AW/AWG KMM5362205AW/AWG Fast Page with EDO Mode 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM G EN ERA L D ESC RIPTIO N FEATURES The Samsung KMM5362205AW is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362205AW consists of four CMOS
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OCR Scan
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KMM5362205AW/AWG
KMM5362205AW/AWG
2Mx36
KMM5362205AW
1Mx16
42-pin
24-pin
72-pin
km416c1204aj
9-14110
KMM5362205AWG
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PDF
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KMM5322204AW
Abstract: No abstract text available
Text: KMM5322204AW DR A M Modul e ELECTRONICS KM M5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322204AW is a 2M bit x 32 Dynamic RAM high density memory module. The
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OCR Scan
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KMM5322204AW
M5322204AW/AWG
2Mx32
1Mx16
KMM5322204AW
42-pin
72-pin
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PDF
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km416c1204aj
Abstract: No abstract text available
Text: DRAM MODULE KMM5361205AW/AWG KMM5361205AW/AWG Fast Page with EDO Mode 1Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM FEATURES G ENER AL DESCRIPTIO N • Part Identification The Samsung KM M 5361205AW is a 1M bit x 36 - KMM5361205AW 1024 cycles/16ms Ref, SOJ, Solder
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OCR Scan
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KMM5361205AW/AWG
KMM5361205AW/AWG
1Mx36
5361205AW
1Mx16
42-pin
KMM5361205AW
KMM5361205AW
102HAS
km416c1204aj
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PDF
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km416c1204aj
Abstract: No abstract text available
Text: DRAM MODULE KMM364E224AJ KMM364E224AJ Fast Page with EDO Mode 2M x64 DRAM DIMM based on 1M x 16, 1K Refresh, 5V GEN ERA L DESCRIPTIO N FEATURES The Samsung KM M 364F224AJ is a 2M bit x 64 • Part Identification D ynam ic RAM high density m em ory module. The
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OCR Scan
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KMM364E224AJ
364F224AJ
364E224AJ
16bit
44-pin
48pin
163-pin
KMM364E224AJ
km416c1204aj
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PDF
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