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    Untitled

    Abstract: No abstract text available
    Text: KMM364Ë224AJ DRAM MODULE KMM364E224AJ Fast Page with EDO Mode 2Mx64 DRAM DIMM based on 1M x 1 6 ,1 K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364F224AJ is a 2M bit X 64 Dynamic RAM high density memory module. The Samsung KMM364E224AJ consists of eight CMOS


    OCR Scan     		PDF KMM364Ã 224AJ KMM364E224AJ 2Mx64 KMM364F224AJ 1Mx16bit 44-pin 400mil 48pin

    Untitled

    Abstract: No abstract text available
    Text: KM416C1204A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: KM416C1204A-6/A-L6/A-F6 tRAC tCAC tRC tHPC 60ns 17ns 110ns 24ns KM416C1204A-7/A-L7/A-F7 70ns 20ns 130ns 29ns KM416C1204A-8/A-L8/A-F8


    OCR Scan     		PDF KM416C1204A/A-L/A-F KM416C1204A-6/A-L6/A-F6 110ns KM416C1204A-7/A-L7/A-F7 130ns KM416C1204A-8/A-L8/A-F8 150ns cycle/16m cycle/128msCLE 71b4142

    km416c1204aj

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5322204AW/AWG KMM5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322204AW is a 2M bit x 32 • Part Identification Dynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM5322204AW/AWG KMM5322204AW/AWG 2Mx32 1Mx16 KMM5322204AW KMM5322204AW cycles/16ms 5322204AW 1Mx16bit 42-pin km416c1204aj

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362205AW/AWG KMM5362205AW/AWG Fast Page with EDO Mode 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM G ENERAL DESCRIPTIO N FEATURES The Samsung KMM5362205AW is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362205AW consists of four CMOS


    OCR Scan     		PDF KMM5362205AW/AWG KMM5362205AW/AWG 2Mx36 KMM5362205AW 1Mx16 42-pin KMM5362205AW cycles/16ms 24-pin

    KM416C1204AJ

    Abstract: km416c1204a 1076 GE
    Text: CMOS DRAM KM416C1204A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1204A/A-L/A-F is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance


    OCR Scan     		PDF KM416C1204A/A-L/A-F KM416C1204A-6/A-L6/A-F6 KM416C1204A-7/A-L7/A-F7 KM416C1204A-8/A-L8/A-F8 110ns 130ns 150ns KM416C1204A/A-L/A-F KM416C1204AJ km416c1204a 1076 GE

    km416c1204a

    Abstract: km416c1204aj
    Text: DRAM MODULE KMM5321204AW/AWG KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIMM, 5V, 1K Refresh using 1M x 16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification - KMM5321204AW {1024 cycles/16 ms Ref, SOJ, Solder


    OCR Scan     		PDF M5321204A KMM5321204AW/AWG 1Mx32 KMM5321204AW KMM5321 204AW 1Mx16bit 42-pin 72-pin km416c1204a km416c1204aj

    Untitled

    Abstract: No abstract text available
    Text: KMM5321204AW ELECTRONICS DRAM Module KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIM M , 5V, 1K Refresh using 1M x 16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321204AW consists of two CMOS


    OCR Scan     		PDF KMM5321204AW KMM5321204AW/AWG 1Mx32 KMM5321204AW 1Mx16bit 42-pin 72-pin

    km416c1204aj

    Abstract: 9-14110 KMM5362205AWG
    Text: DRAM MODULE KMM5362205AW/AWG KMM5362205AW/AWG Fast Page with EDO Mode 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM G EN ERA L D ESC RIPTIO N FEATURES The Samsung KMM5362205AW is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362205AW consists of four CMOS


    OCR Scan     		PDF KMM5362205AW/AWG KMM5362205AW/AWG 2Mx36 KMM5362205AW 1Mx16 42-pin 24-pin 72-pin km416c1204aj 9-14110 KMM5362205AWG

    KMM5322204AW

    Abstract: No abstract text available
    Text: KMM5322204AW DR A M Modul e ELECTRONICS KM M5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322204AW is a 2M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM5322204AW M5322204AW/AWG 2Mx32 1Mx16 KMM5322204AW 42-pin 72-pin

    km416c1204aj

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5361205AW/AWG KMM5361205AW/AWG Fast Page with EDO Mode 1Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM FEATURES G ENER AL DESCRIPTIO N • Part Identification The Samsung KM M 5361205AW is a 1M bit x 36 - KMM5361205AW 1024 cycles/16ms Ref, SOJ, Solder


    OCR Scan     		PDF KMM5361205AW/AWG KMM5361205AW/AWG 1Mx36 5361205AW 1Mx16 42-pin KMM5361205AW KMM5361205AW 102HAS km416c1204aj

    km416c1204aj

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364E224AJ KMM364E224AJ Fast Page with EDO Mode 2M x64 DRAM DIMM based on 1M x 16, 1K Refresh, 5V GEN ERA L DESCRIPTIO N FEATURES The Samsung KM M 364F224AJ is a 2M bit x 64 • Part Identification D ynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM364E224AJ 364F224AJ 364E224AJ 16bit 44-pin 48pin 163-pin KMM364E224AJ km416c1204aj