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    Samsung Semiconductor KMM5321000BV-7

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    Samsung Semiconductor KMM5321000BV-6

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    Samsung Semiconductor KMM5321204AW-6

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    KMM5321 Datasheets (46)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KMM5321000BV-6 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BV-7 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BV-8 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BVG-6 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BVG-7 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BVG-8 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321200AW-6 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200AW-7 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200AWG-6 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200AWG-7 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200BW-6 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200BW-7 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200BWG-6 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200BWG-7 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200C2W-5 Samsung Electronics 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    KMM5321200C2W-6 Samsung Electronics 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    KMM5321200C2WG Samsung Electronics 1M x 32 DRAM SIMM (1MX16 Base) Original PDF
    KMM5321200C2WG-5 Samsung Electronics 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    KMM5321200C2WG-6 Samsung Electronics 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    KMM5321204AW-6 Samsung Electronics 1M x 32 DRAM SIMM, 5V, 1K Refresh Scan PDF

    KMM5321 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KMM53216004BK

    Abstract: KMM53216004BKG
    Text: DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module.


    Original     		KMM53216004BK/BKG KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits 16Mx4bits 72-pin KMM53216004BK KMM53216004BKG PDF

    KMM5321200C2W

    Abstract: KMM5321200C2WG
    Text: DRAM MODULE KMM5321200C2W/C2WG Revision History Version 0.0 November 1997 • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE


    Original     		KMM5321200C2W/C2WG KMM5321200CW/CWG KMM5321200C2W/C2WG 1Mx16, KMM5321200C2W 1Mx32bits 1Mx16bits KMM5321200C2WG PDF

    KMM53216000CK

    Abstract: KMM53216000CKG
    Text: DRAM MODULE KMM53216000CK/CKG 4Byte 16Mx32 SIMM 16Mx4 base Revision 0.0 JUNE 1998 DRAM MODULE Revision History Version 0.0 (JUNE 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53216000CK/CKG DRAM MODULE KMM53216000CK/CKG


    Original     		KMM53216000CK/CKG 16Mx32 16Mx4 KMM53216000CK/CKG 16Mx4, KMM53216000C 16Mx32bits KMM53216000CK KMM53216000CKG PDF

    KMM53216004CK

    Abstract: KMM53216004CKG samsung 64mb dram module 72-pin simm
    Text: DRAM MODULE KMM53216004CK/CKG 4Byte 16Mx32 SIMM 16Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53216004CK/CKG DRAM MODULE KMM53216004CK/CKG


    Original     		KMM53216004CK/CKG 16Mx32 16Mx4 KMM53216004CK/CKG 16Mx4, KMM53216004C 16Mx32bits KMM53216004CK KMM53216004CKG samsung 64mb dram module 72-pin simm PDF

    1MX16

    Abstract: KMM5321200C2W KMM5321200C2WG
    Text: DRAM MODULE KMM5321200C2W/C2WG 1Mx32 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321200C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision .


    Original     		KMM5321200C2W/C2WG 1Mx32 1MX16 KMM5321200CW/CWG KMM5321200C2W/C2WG 1Mx16, KMM5321200C2W KMM5321200C2WG PDF

    KMM53216004BK

    Abstract: KMM53216004BKG
    Text: DRAM MODULE KMM53216004BK/BKG KMM53216004BK/BKG EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53216004B is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216004B consists of eight CMOS 16Mx4bits DRAMs


    Original     		KMM53216004BK/BKG KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits 16Mx4bits 72-pin KMM53216004BK KMM53216004BKG PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53216000CV/CVG 4Byte 16Mx32 SIMM 16Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53216000CV/CVG DRAM MODULE KMM53216000CV/CVG


    Original     		KMM53216000CV/CVG 16Mx32 16Mx4 KMM53216000CV/CVG 16Mx4, KMM53216000C 16Mx32bits 16Mx4bits PDF

    s - ck5t

    Abstract: CA52
    Text: Preliminary KMM5321200BW/BWG DRAM MODULE KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200BW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification


    OCR Scan     		KMM5321200BW/B KMM5321200BW/BWG 1Mx32 1Mx16 KMM5321200BW 42-pin 72-pin s - ck5t CA52 PDF

    KM416C1200AJ

    Abstract: ra57
    Text: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ER AL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification


    OCR Scan     		M5321200AW/AWG KMM5321200AW/AWG 1Mx32 1Mx16 KMM5321200AW 42-pin 72-pin KMM5321200AW KM416C1200AJ ra57 PDF

    KMM5321000BV-7

    Abstract: KMM5321000BV-6 1Mx4 dram simm caso Samsung Capacitor DO30 KMM5321000BV-8
    Text: SAMSUNG ELECTRONICS INC b?E D • O O lS llb KMM5321000BV/BVG fi^b DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tftAC • • • • • • • tcAc I rc KMM5321000BV-6 60ns 15ns 110ns KMM5321000BV-7 70ns


    OCR Scan     		KMM5321000BV/BVG 1Mx32 KMM5321000BV-6 KMM5321000BV-7 110ns 130ns 150ns KMM5321000BV-8 cycles/16ms KMM5321000BV 1Mx4 dram simm caso Samsung Capacitor DO30 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53216004BK/BKG 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		KMM53216004BK/BKG 16Mx32SIMM 16Mx4 KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits PDF

    KMM5321000BV-6

    Abstract: No abstract text available
    Text: KM M5321000BV/BVG DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5321000BV is a 1M bits x 32 Dynam­ ic RAM high de nsity m em ory module. The Samsung KMM5321000BV co n s is t of eig h t CMOS 1 M x 4 bit


    OCR Scan     		M5321000BV/BVG 1Mx32 KMM5321000BV-6 KMM5321000BV-7 KMM5321000BV-8 110ns 130ns 150ns KMM5321000BV KMM5321000BV-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KMM5321OOOW/WG DRAM MODULES 1M x32 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES • Performance range: tRAC KM M5321000W-7 KMM5321000W-8 KM M5321000W-10 70ns 20ns 130ns 80ns 20ns 150ns 100ns 25ns 180ns Fast Page Mode operation CAS-before-RAS refresh capability


    OCR Scan     		KMM5321OOOW/WG KMM5321000W 42-pin 72-pin 22/xF M5321000W-7 KMM5321000W-8 M5321000W-10 PDF

    HX-5v

    Abstract: No abstract text available
    Text: DRAM MODULE 4 Mega Byte KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM , 1K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM 7 GENERAL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321200AW consists of two CMOS


    OCR Scan     		KMM5321200AW/AWG 1Mx32 1Mx16 KMM5321200AW 42-pin 72-pin 110ns HX-5v PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5321204C2W/C2WG 1Mx32 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321204C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision .


    OCR Scan     		KMM5321204C2W/C2WG 1Mx32 1MX16 KMM5321200CW/CWG KMM5321200C2W/C2WG KMM5321204C2W/C2WG 1Mx16 KMM5321204C2W PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES KMM5321000AV/AVG 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KM M5321000AV- 7 • • • • • • • tRAC tcAC tRC 70ns 2 0 ns 130ns KMM5321000AV- 8 80ns 2 0 ns 150ns KM M5321000AV-10 1 0 0 ns 25ns 180ns


    OCR Scan     		KMM5321000AV/AVG 1Mx32 M5321000AV- KMM5321000AV- M5321000AV-10 130ns 150ns 180ns KMM5321000AV bitsx32 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 4 Mega Byte KMM5321000W/WG Fast Page Mode 1 M x32 DRAM S IM M , 4K Refresh , 5V Using 1M x16 Byte Word Wide DRAM G EN E R A L DES C R IPTIO N FEATURES • P e rfo rm an ce R ange: T h e S a m s u n g K M M 5 3 2 1 0 0 0 W is a 1M b il x 32 D y n a m ic R A M h ig h d e n s ity m e m o ry m o d u le . T h e


    OCR Scan     		KMM5321000W/WG 321000W 130ns 150ns 1Mx16 KM416C1000J PDF

    1004CL

    Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
    Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7


    OCR Scan     		KMM5321200BW/BWG-6 5321200BW/BWG-' KMM5361203BW/8 KMM5322200BW/BWG-6 KMM5322100BKU/BKUG-5 MM5361203BW/BWG-7 KMM5322200BW/BWG-7 2MX32 KMM5322100BK 2Mx36 1004CL 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32 PDF

    km416c1204a

    Abstract: km416c1204aj
    Text: DRAM MODULE KMM5321204AW/AWG KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIMM, 5V, 1K Refresh using 1M x 16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification - KMM5321204AW {1024 cycles/16 ms Ref, SOJ, Solder


    OCR Scan     		M5321204A KMM5321204AW/AWG 1Mx32 KMM5321204AW KMM5321 204AW 1Mx16bit 42-pin 72-pin km416c1204a km416c1204aj PDF

    KM416C1200AJ

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The Samsung KM M 5321200AW consists of tw o CMOS


    OCR Scan     		KMM5321200AW/AWG KMM5321200AW/AWG 1Mx32 1Mx16 KMM5321200AW 5321200AW KMM5321200AW cycles/16 KM416C1200AJ PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM5321200AW D RAM Module ELECTRONICS KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321200AW consists of two CMOS


    OCR Scan     		KMM5321200AW KMM5321200AW/AWG 1Mx32 1Mx16 KMM5321200AW 42-pin 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary DRAM MODULE KMM5321200BW/BWG KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KM M 5321200BW is a 1M bit x 32 - KMM5321200BW 1024 cycles/16ms Ref, SOJ, Solder


    OCR Scan     		KMM5321200BW/BWG KMM5321200BW/BWG 1Mx32 1Mx16 5321200BW KMM5321200BW cycles/16ms KMM5321200BW PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5321200C2W/C2WG 1Mx32 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321200C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW /CWG to KMM5321200C2W /C2W G caused by PCB revision .


    OCR Scan     		KMM5321200C2W/C2WG 1Mx32 1MX16 KMM5321200CW KMM5321200C2W KMM5321200C2W/C2WG 1Mx16, 5321200C2W PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM5321204AW ELECTRONICS DRAM Module KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIM M , 5V, 1K Refresh using 1M x 16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321204AW consists of two CMOS


    OCR Scan     		KMM5321204AW KMM5321204AW/AWG 1Mx32 KMM5321204AW 1Mx16bit 42-pin 72-pin PDF