4N10 Search Results

4N10 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
R5F72434N100FP#U0		Renesas Electronics Corporation	32-bit Microcontrollers

4N10 Price and Stock

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STMicroelectronics HSP051-4N10 TVS DIODE 3.6VWM 10VC 10UQFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HSP051-4N10	Reel	35,000		7,000	1 - 10 - 100 - 1000 - 10000 $0.055	Buy Now
STMicroelectronics	HSP051-4N10		14,342		1	1 $0.27 10 $0.18 100 $0.08 1000 $0.08 10000 $0.08	Buy Now
Bristol Electronics	HSP051-4N10		100			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	HSP051-4N10		100			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	HSP051-4N10		35,000	16 Weeks	7,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	HSP051-4N10			16 Weeks	7,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Nisshinbo Micro Devices R1224N102M-TR-FE PWM/VFM STEP-DOWN DCDC CONTROLLE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R1224N102M-TR-FE	Digi-Reel	5,950		1	1 $1.5 10 $1.093 100 $0.8802 1000 $0.76891 10000 $0.76891	Buy Now
	R1224N102M-TR-FE	Cut Tape	5,950		1	1 $1.5 10 $1.093 100 $0.8802 1000 $0.76891 10000 $0.76891	Buy Now
	R1224N102M-TR-FE	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.71253	Buy Now
Mouser Electronics	R1224N102M-TR-FE		3,165			1 $1.5 10 $1.1 100 $0.88 1000 $0.725 10000 $0.69	Buy Now
Infineon Technologies AG BSF134N10NJ3GXUMA1 MOSFET N-CH 100V 9A/40A 2WDSON
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BSF134N10NJ3GXUMA1	Cut Tape	4,956		1	1 $2.68 10 $1.734 100 $1.1929 1000 $0.88698 10000 $0.82442	Buy Now
	BSF134N10NJ3GXUMA1	Digi-Reel	4,956		1	1 $2.68 10 $1.734 100 $1.1929 1000 $0.88698 10000 $0.82442	Buy Now
Rochester Electronics	BSF134N10NJ3GXUMA1		48,157		1	1 $0.9111 10 $0.9111 100 $0.8564 1000 $0.7744 10000 $0.7744	Buy Now
EBV Elektronik	BSF134N10NJ3GXUMA1			143 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Amphenol Advanced Sensors DKF104N10 THERM NTC 100KOHM 3960K DO35
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DKF104N10	Bulk	999		1	1 $0.49 10 $0.406 100 $0.3421 1000 $0.30762 10000 $0.26904	Buy Now
Littelfuse Inc IXFA4N100Q MOSFET N-CH 1000V 4A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFA4N100Q	Tube	898		1	1 $8.8 10 $8.8 100 $5.292 1000 $4.59712 10000 $4.59712	Buy Now
RS	IXFA4N100Q	Bulk		8 Weeks	50	1 - 10 - 100 $7.11 1000 $7.11 10000 $7.11	Get Quote

Find more 4N10 price and stock on Findchips.com

4N10 Datasheets (21)

Part	Manufacturer	Description	Datasheet Type	PDF
4N10	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
4N100	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
4N100WR-10	Inmet	ATTENUATOR	Scan	PDF
4N100WR-10F	Inmet	ATTENUATOR	Scan	PDF
4N100WR-10M	Inmet	ATTENUATOR	Scan	PDF
4N100WR-20	Inmet	ATTENUATOR	Scan	PDF
4N100WR-20F	Inmet	ATTENUATOR	Scan	PDF
4N100WR-20M	Inmet	ATTENUATOR	Scan	PDF
4N100WR-3	Inmet	ATTENUATOR	Scan	PDF
4N100WR-30	Inmet	ATTENUATOR	Scan	PDF
4N100WR-30F	Inmet	ATTENUATOR	Scan	PDF
4N100WR-30M	Inmet	ATTENUATOR	Scan	PDF
4N100WR-3F	Inmet	ATTENUATOR	Scan	PDF
4N100WR-3M	Inmet	ATTENUATOR	Scan	PDF

4N100WR-40	Inmet	ATTENUATOR	Scan	PDF
4N100WR-40F	Inmet	ATTENUATOR	Scan	PDF
4N100WR-40M	Inmet	ATTENUATOR	Scan	PDF
4N100WR-6	Inmet	ATTENUATOR	Scan	PDF
4N100WR-6F	Inmet	ATTENUATOR	Scan	PDF
4N100WR-6M	Inmet	ATTENUATOR	Scan	PDF

4N10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
125OC Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class IXFA 4N100Q IXFP 4N100Q VDSS =1000 V = 4 A ID25 RDS on = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR	Original	4N100Q O-220 Figure10. 125OC 125OC	PDF
IRF510 Abstract: Gate Drive circuit for irf510 irf510 power IRF5105 7937 4N10 DD57 IRF510-513 IRF511 IRF512 Text: 3469674 FAIRCHILD SEMICONDUCTOR f l 14 D e I 3 4 ^ 7 4 DGETTBM fl I IRF510-513 MTP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-220AB These devices are n-channel, enhancement mode, power	OCR Scan	IRF510-513 MTP4N08/4N10 O-220AB IRF510 IRF511 IRF512 IRF513 MTP4N08 MTP4N10 IRF510-513 IRF510 Gate Drive circuit for irf510 irf510 power IRF5105 7937 4N10 DD57 IRF511 IRF512	PDF
4n100 Abstract: IXFH4N100Q 4N100Q IXFR4N100Q Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside VDSS = 1000 V ID25 = 3.5 A RDS(on) = 3.0 Ω trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings	Original	ISOPLUS247TM 4N100Q 200ns IXFH4N100Q 728B1 4n100 4N100Q IXFR4N100Q	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	4N100Q O-247 Figure10. 125OC	PDF
4N100Q Abstract: 125OC Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	4N100Q O-247 125OC 728B1 123B1 728B1 065B1 125OC	PDF
IXFH4N100Q Abstract: IXFR4N100Q Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM	Original	ISOPLUS247TM 4N100Q 200ns IXFH4N100Q 728B1 123B1 728B1 065B1 IXFR4N100Q	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class IXFA 4N100Q IXFP 4N100Q VDSS =1000 V ID25 = 4 A RDS on = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	O-220) O-220 O-263 4N100Q 4N100Q O-220 Figure10. 125OC	PDF
IRF510 Abstract: Gate Drive circuit for irf510 Fairchild Semiconductor DS-513 MTP4N10 IRF-510 DD57 IRF510-513 IRF511 IRF512 IRF513 Text: 3469674 FAIRCHILD SEMICONDUCTOR D iT l 3 4 1 ^ 7 4 DGH7TB4_fl IRF510-513 MTP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description These devices are n-channel, enhancement mode, power	OCR Scan	IRF510-513 MTP4N08/4N10 O-220AB IRF510 IRF511 IRF512 IRF513 MTP4N08 MTP4N10 IRF510-513 IRF510 Gate Drive circuit for irf510 Fairchild Semiconductor DS-513 MTP4N10 IRF-510 DD57 IRF511 IRF512 IRF513	PDF
125OC Abstract: 4N100Q Text: IXFA 4N100Q IXFP 4N100Q HiPerFETTM Power MOSFETs Q-Class VDSS =1000 V = 4A ID25 RDS on = 3.0 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	4N100Q O-220 125OC 728B1 123B1 728B1 065B1 125OC 4N100Q	PDF
Untitled Abstract: No abstract text available Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFH 4N100Q IXFT 4N100Q V DSS ^D25 D D S o n = 1000 V 4A = 2.8 Q trr < 250 ns N-Channel Enhancement Mode Avalanche Rated, LowQ , Highdv/dt Symbol TestConditions Maximum Ratings V DSS	OCR Scan	4N100Q -247A	PDF
Untitled Abstract: No abstract text available Text: IXFA 4N100Q IXFP 4N100Q HiPerFETTM Power MOSFETs Q-Class VDSS =1000 V ID25 = 4A RDS on = 3.0 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	O-220) O-220 O-263 4N100Q 4N100Q O-220 O-26oltage Figure10.	PDF
IXFR4N100Q Abstract: IXFH4N100 ll1000 Text: Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	ISOPLUS247TM 4N100Q 200ns IXFH4N100 IXFR4N100Q ll1000	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	O-247 O-268 4N100Q Figure10. 125OC	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 2.8 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	O-247 O-268 4N100Q O-268 Figure10. 125OC	PDF

4N100 Abstract: No abstract text available Text: Advanced Technical Information IGBT IXGA 4N100 IXGP 4N100 Symbol Test Conditions Maximum Ratings VCES = 1000 V IC25 = 8A VCE sat = 2.7 V VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	4N100 O-220AB O-263 4N100	PDF
4N100Q Abstract: 125OC Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	4N100Q O-247 Figure10. 125OC 125OC	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside VDSS = 1000 V ID25 = 3.5 A RDS(on) = 3.0 Ω trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings	Original	ISOPLUS247TM 4N100Q 200ns IXFH4N100Q 728B1	PDF
rockwell collins connector Abstract: 8040 instruction sheet HF-8040 523-076745B-00221A HF-9040 a13499 10MILLISECOND ROCKWELL COLLINS ARC-186 N6P2 RAP10 Text: 523-076745B-00221A Rockwell International Collins instruction book HF-8040 Antenna Coupler This instruction book includes: 523-0767459 Description HF-804QM Supplement 523-0771398 523-0767460 Installation 523-0767461 Operation 523-0767462 Theory 523-0767463	OCR Scan	523-076745B-00221A HF-8040( HF-804QM HF-8040 F-1040 F-8040 HF-B040 4N1001 rockwell collins connector 8040 instruction sheet 523-076745B-00221A HF-9040 a13499 10MILLISECOND ROCKWELL COLLINS ARC-186 N6P2 RAP10	PDF
c151A Abstract: C273A C342A r133a C327A R227A C337A c347a BC147A C352A Text: A INTEL PENTIUM® II/PENTIUM® III PROCESSOR SC242 / INTEL 810e CHIPSET UNIPROCESSOR CUSTOMER REFERENCE SCHEMATICS REVISION 1.0 Title A Page Cover Sheet 1 Block Diagram SC242 Connector 2 Clock Synthesizer 5 82810e Display Cache 6, 7, 8 9 System Memory	Original	SC242) SC242 82810e ULTRA-ATA66 C299A C290A C280A C278A C277A C276A c151A C273A C342A r133a C327A R227A C337A c347a BC147A C352A	PDF
Intel L440GX MOTHERBOARD Schematics Abstract: RP5A WIRING DIAGRAM c151A sio lpc chip intel p4 motherboard 82801 g SCHEMATIC DIAGRAM C379A Intel Mobile Celeron Mendocino intel 80.82 4n606 transistor C388A Text: Intel-Based Electronic Classroom Student Computing Station Based on the Intel Celeron Processor and Intel® 810 Chipset Reference Configuration August 2000 Order Number: 273292-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual	Original	2801A 82801AA C162A C372A C324A C317A CH6-236 Intel L440GX MOTHERBOARD Schematics RP5A WIRING DIAGRAM c151A sio lpc chip intel p4 motherboard 82801 g SCHEMATIC DIAGRAM C379A Intel Mobile Celeron Mendocino intel 80.82 4n606 transistor C388A	PDF
4435a Abstract: 9435a 4410b 9407a 9952a 9936A 9926A Sc 6200 equivalent 993-9A 8435a Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Drain Current Static Drain to Source On Resistance Max. Gate Threshold Voltage Zero Gate Voltage Drain Current VGSS ID DC RDS(ON) @ ID / VGS VGS(th) IDSS @ VDS,VGS=0V	Original		PDF
1N100WR-6 Abstract: 4N100WR-30M Text: ATTENUATORS up to 4 GHz TYPE N 100 Watts MODELS: XN 1 OOWR — > X N 1 0 0 W R -X X F , XN 1 OOWR — X X Ivi REDUCED SIZE SPECIFICATIONS: Electrical: Frequency Range Standard Freq. Values Standard dB Values* Attenuation Accuracy 3 & 6 d B _ 10 & 20 d B _	OCR Scan	00WR-> 00WR-XX MIL-STD-348 XN100WR-XXY 1N100WR-6 4N100WR-30M XN100WR-ATT;	PDF
Untitled Abstract: No abstract text available Text: IPB180N10S4-02 OptiMOSTM-T2 Power-Transistor Product Summary VDS 100 V RDS on 2.5 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)	Original	IPB180N10S4-02 PG-TO263-7-3 4N1002	PDF
4N10L22 Abstract: No abstract text available Text: IPG20N10S4L-22 OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS on ,max4) 22 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	IPG20N10S4L-22 4N10L22 4N10L22	PDF

4N10 Search Results

4N10 Result Highlights (1)

4N10 Price and Stock

STMicroelectronics HSP051-4N10

Nisshinbo Micro Devices R1224N102M-TR-FE

Infineon Technologies AG BSF134N10NJ3GXUMA1

Amphenol Advanced Sensors DKF104N10

Littelfuse Inc IXFA4N100Q

4N10 Datasheets (21)

4N10 Datasheets Context Search

125OC

IRF510

4n100

Untitled

4N100Q

IXFH4N100Q

Untitled

IRF510

125OC

Untitled

Untitled

IXFR4N100Q

Untitled

Untitled

4N100

4N100Q

Untitled

rockwell collins connector

c151A

Intel L440GX MOTHERBOARD Schematics

4435a

1N100WR-6

Untitled

4N10L22