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    4N10 Search Results

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    R5F72434N100FP#U0 Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
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    4N10 Price and Stock

    STMicroelectronics HSP051-4N10

    TVS DIODE 3.6VWM 10VC 10UQFN
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    DigiKey HSP051-4N10 Digi-Reel 47,712 1
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    HSP051-4N10 Reel 42,000 7,000
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    STMicroelectronics HSP051-4N10 27,451 1
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    Avnet Silica HSP051-4N10 16 Weeks 7,000
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    Infineon Technologies AG BSC034N10LS5ATMA1

    MOSFET N-CH 100V 19A/100A TDSON
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    Mouser Electronics BSC034N10LS5ATMA1 11,018
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    Newark BSC034N10LS5ATMA1 Cut Tape 28,754 1
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    Rochester Electronics BSC034N10LS5ATMA1 1
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    PanJit Group PSMQC074N10NS2_R2_00201

    100V/ 7.4M/ EXCELLECT LOW FOM MO
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    DigiKey PSMQC074N10NS2_R2_00201 Reel 6,000 3,000
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    Novacap 0504N101J101P

    CAP CER 100PF 100V 0504 EPOXY
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    DigiKey 0504N101J101P Bulk 3,590 1
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    PanJit Group PSMQC094N10NS2_R2_00201

    100V/ 9.4M/ EXCELLECT LOW FOM MO
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    PSMQC094N10NS2_R2_00201 Cut Tape 2,980 1
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    4N10 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    4N10 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    4N100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    4N100WR-10 Inmet ATTENUATOR Scan PDF
    4N100WR-10F Inmet ATTENUATOR Scan PDF
    4N100WR-10M Inmet ATTENUATOR Scan PDF
    4N100WR-20 Inmet ATTENUATOR Scan PDF
    4N100WR-20F Inmet ATTENUATOR Scan PDF
    4N100WR-20M Inmet ATTENUATOR Scan PDF
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    4N100WR-30 Inmet ATTENUATOR Scan PDF
    4N100WR-30F Inmet ATTENUATOR Scan PDF
    4N100WR-30M Inmet ATTENUATOR Scan PDF
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    4N100WR-40 Inmet ATTENUATOR Scan PDF
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    4N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    125OC

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class IXFA 4N100Q IXFP 4N100Q VDSS =1000 V = 4 A ID25 RDS on = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		PDF 4N100Q O-220 Figure10. 125OC 125OC

    4n100

    Abstract: IXFH4N100Q 4N100Q IXFR4N100Q
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside VDSS = 1000 V ID25 = 3.5 A RDS(on) = 3.0 Ω trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings


    Original     		PDF ISOPLUS247TM 4N100Q 200ns IXFH4N100Q 728B1 4n100 4N100Q IXFR4N100Q

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 4N100Q O-247 Figure10. 125OC

    4N100Q

    Abstract: 125OC
    Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 4N100Q O-247 125OC 728B1 123B1 728B1 065B1 125OC

    IXFH4N100Q

    Abstract: IXFR4N100Q
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM


    Original     		PDF ISOPLUS247TM 4N100Q 200ns IXFH4N100Q 728B1 123B1 728B1 065B1 IXFR4N100Q

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class IXFA 4N100Q IXFP 4N100Q VDSS =1000 V ID25 = 4 A RDS on = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF O-220) O-220 O-263 4N100Q 4N100Q O-220 Figure10. 125OC

    125OC

    Abstract: 4N100Q
    Text: IXFA 4N100Q IXFP 4N100Q HiPerFETTM Power MOSFETs Q-Class VDSS =1000 V = 4A ID25 RDS on = 3.0 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 4N100Q O-220 125OC 728B1 123B1 728B1 065B1 125OC 4N100Q

    Untitled

    Abstract: No abstract text available
    Text: IXFA 4N100Q IXFP 4N100Q HiPerFETTM Power MOSFETs Q-Class VDSS =1000 V ID25 = 4A RDS on = 3.0 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF O-220) O-220 O-263 4N100Q 4N100Q O-220 O-26oltage Figure10.

    IXFR4N100Q

    Abstract: IXFH4N100 ll1000
    Text: Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF ISOPLUS247TM 4N100Q 200ns IXFH4N100 IXFR4N100Q ll1000

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF O-247 O-268 4N100Q Figure10. 125OC

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 2.8 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF O-247 O-268 4N100Q O-268 Figure10. 125OC

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IGBT IXGA 4N100 IXGP 4N100 Symbol Maximum Ratings Test Conditions VCES = 1000 V IC25 = 8A VCE sat = 2.7 V VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 4N100 O-220AB O-263

    4N100

    Abstract: No abstract text available
    Text: Advanced Technical Information IGBT IXGA 4N100 IXGP 4N100 Symbol Test Conditions Maximum Ratings VCES = 1000 V IC25 = 8A VCE sat = 2.7 V VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 4N100 O-220AB O-263 4N100

    4N100Q

    Abstract: 125OC
    Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 4N100Q O-247 Figure10. 125OC 125OC

    c151A

    Abstract: C273A C342A r133a C327A R227A C337A c347a BC147A C352A
    Text: A INTEL PENTIUM® II/PENTIUM® III PROCESSOR SC242 / INTEL 810e CHIPSET UNIPROCESSOR CUSTOMER REFERENCE SCHEMATICS REVISION 1.0 Title A Page Cover Sheet 1 Block Diagram SC242 Connector 2 Clock Synthesizer 5 82810e Display Cache 6, 7, 8 9 System Memory


    Original     		PDF SC242) SC242 82810e ULTRA-ATA66 C299A C290A C280A C278A C277A C276A c151A C273A C342A r133a C327A R227A C337A c347a BC147A C352A

    Intel L440GX MOTHERBOARD Schematics

    Abstract: RP5A WIRING DIAGRAM c151A sio lpc chip intel p4 motherboard 82801 g SCHEMATIC DIAGRAM C379A Intel Mobile Celeron Mendocino intel 80.82 4n606 transistor C388A
    Text: Intel-Based Electronic Classroom Student Computing Station Based on the Intel Celeron Processor and Intel® 810 Chipset Reference Configuration August 2000 Order Number: 273292-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual


    Original     		PDF 2801A 82801AA C162A C372A C324A C317A CH6-236 Intel L440GX MOTHERBOARD Schematics RP5A WIRING DIAGRAM c151A sio lpc chip intel p4 motherboard 82801 g SCHEMATIC DIAGRAM C379A Intel Mobile Celeron Mendocino intel 80.82 4n606 transistor C388A

    4435a

    Abstract: 9435a 4410b 9407a 9952a 9936A 9926A Sc 6200 equivalent 993-9A 8435a
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Drain Current Static Drain to Source On Resistance Max. Gate Threshold Voltage Zero Gate Voltage Drain Current VGSS ID DC RDS(ON) @ ID / VGS VGS(th) IDSS @ VDS,VGS=0V


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB180N10S4-02 OptiMOSTM-T2 Power-Transistor Product Summary VDS 100 V RDS on 2.5 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		PDF IPB180N10S4-02 PG-TO263-7-3 4N1002

    4N10L22

    Abstract: No abstract text available
    Text: IPG20N10S4L-22 OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS on ,max4) 22 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPG20N10S4L-22 4N10L22 4N10L22

    IRF510

    Abstract: Gate Drive circuit for irf510 irf510 power IRF5105 7937 4N10 DD57 IRF510-513 IRF511 IRF512
    Text: 3469674 FAIRCHILD SEMICONDUCTOR f l 14 D e I 3 4 ^ 7 4 DGETTBM fl I IRF510-513 MTP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-220AB These devices are n-channel, enhancement mode, power


    OCR Scan     		PDF IRF510-513 MTP4N08/4N10 O-220AB IRF510 IRF511 IRF512 IRF513 MTP4N08 MTP4N10 IRF510-513 IRF510 Gate Drive circuit for irf510 irf510 power IRF5105 7937 4N10 DD57 IRF511 IRF512

    IRF510

    Abstract: Gate Drive circuit for irf510 Fairchild Semiconductor DS-513 MTP4N10 IRF-510 DD57 IRF510-513 IRF511 IRF512 IRF513
    Text: 3469674 FAIRCHILD SEMICONDUCTOR D iT l 3 4 1 ^ 7 4 DGH7TB4_fl IRF510-513 MTP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description These devices are n-channel, enhancement mode, power


    OCR Scan     		PDF IRF510-513 MTP4N08/4N10 O-220AB IRF510 IRF511 IRF512 IRF513 MTP4N08 MTP4N10 IRF510-513 IRF510 Gate Drive circuit for irf510 Fairchild Semiconductor DS-513 MTP4N10 IRF-510 DD57 IRF511 IRF512 IRF513

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFH 4N100Q IXFT 4N100Q V DSS ^D25 D D S o n = 1000 V 4A = 2.8 Q trr < 250 ns N-Channel Enhancement Mode Avalanche Rated, LowQ , Highdv/dt Symbol TestConditions Maximum Ratings V DSS


    OCR Scan     		PDF 4N100Q -247A

    rockwell collins connector

    Abstract: 8040 instruction sheet HF-8040 523-076745B-00221A HF-9040 a13499 10MILLISECOND ROCKWELL COLLINS ARC-186 N6P2 RAP10
    Text: 523-076745B-00221A Rockwell International Collins instruction book HF-8040 Antenna Coupler This instruction book includes: 523-0767459 Description HF-804QM Supplement 523-0771398 523-0767460 Installation 523-0767461 Operation 523-0767462 Theory 523-0767463


    OCR Scan     		PDF 523-076745B-00221A HF-8040( HF-804QM HF-8040 F-1040 F-8040 HF-B040 4N1001 rockwell collins connector 8040 instruction sheet 523-076745B-00221A HF-9040 a13499 10MILLISECOND ROCKWELL COLLINS ARC-186 N6P2 RAP10

    1N100WR-6

    Abstract: 4N100WR-30M
    Text: ATTENUATORS up to 4 GHz TYPE N 100 Watts MODELS: XN 1 OOWR — > X N 1 0 0 W R -X X F , XN 1 OOWR — X X Ivi REDUCED SIZE SPECIFICATIONS: Electrical: Frequency Range Standard Freq. Values Standard dB Values* Attenuation Accuracy 3 & 6 d B _ 10 & 20 d B _


    OCR Scan     		PDF 00WR-> 00WR-XX MIL-STD-348 XN100WR-XXY 1N100WR-6 4N100WR-30M XN100WR-ATT;