HY5117800C
Abstract: No abstract text available
Text: HY5117800C,HY5116800C 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY5117800C
HY5116800C
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PDF
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HY5117800C
Abstract: No abstract text available
Text: HY5117800C,HY5116800C 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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Original
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HY5117800C
HY5116800C
10/Sep
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PDF
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TT Electronics
Abstract: No abstract text available
Text: HY5117800C,HY5116800C 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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Original
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HY5117800C
HY5116800C
TT Electronics
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PDF
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HY5117800B
Abstract: HY5117800BT
Text: HY5117800B,HY5116800B 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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Original
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HY5117800B
HY5116800B
HY5117800BT
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM53221OA E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221 OA is a 2M x 32-bit Fast Page mode CMOS DRAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for
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OCR Scan
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HYM53221OA
32-bit
HYM53221
HY5117800B
HYM53221OAE/ASLE/ATE/ASLTE
4b750Afl
1CE13-10-DEC94
HYM532210A
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PDF
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Untitled
Abstract: No abstract text available
Text: "H YU NDA I HYM532220A E-Series 2M x 32-bit CMOS DRAM MODULE DESCRIPTION The HVM532220A is a 2M x 32-bit Fast Page mode CMOS DRAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72pin glass-epoxy printed circuit board. 0.22 iFdecoupling
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OCR Scan
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HYM532220A
32-bit
HVM532220A
HY5117800B
72pin
HYM532220AE/ASLE/ATE/ASLTE
HYM532220AEG/ASLEG/ATEG/ASLTEG
DQ0-DQ31)
1CE13-10-DEC
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PDF
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HYUNDAI i10
Abstract: No abstract text available
Text: “H Y U N D A I HYM532210A E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221OA is a 2M x 32-bit Fast Page m ode CMOS DRAM m odule consisting of four HY5117800B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is m ounted for
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OCR Scan
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HYM532210A
32-bit
HYM53221OA
HY5117800B
HYM53221OAE/ASLE/ATE/ASLTE
HYM53221OAEG/ASLEG/ATEG/ASLTEG
DQ0-DQ31)
1CE13-10-DEC94
HYUNDAI i10
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM532210A E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221OA is a 2M x 32-bit Fast Rage mode CMOS ORAM module consisting of four HY5117800B In 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for
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OCR Scan
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HYM532210A
32-bit
HYM53221OA
HY5117800B
HYM53221OAE/ASLE/ATE/ASLTE
HYMS3221OAEG/ASLEG/ATEG/ASLTEG
DQ0-DQ31)
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PDF
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Untitled
Abstract: No abstract text available
Text: HY5117800 Series «HYUNDAI 2Mx 8-bit CMOS DRAM DESCRIPTION The HY5117800 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5117800 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5117800
1AD08-10-MAY94
HY5117800JC
HY5117800SLJC
HY5117800TC
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY5117800B,HY5116800B 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode C M O S D RAM s. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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OCR Scan
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HY5117800B
HY5116800B
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PDF
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Untitled
Abstract: No abstract text available
Text: "H YU N D AI HY5117800B, HY5116800B 2M x 8-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed random access of memory cells within the same row.
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OCR Scan
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HY5117800B,
HY5116800B
HY5117800BJ
HY5117800BSLJ
HY5117800BT
HY5117800BSLT
HY5116800BJ
HY5116800BSLJ
HY5116800BT
HY5116800BSLT
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PDF
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Untitled
Abstract: No abstract text available
Text: ‘ HYUNDAI HYM532220A E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast Page mode CMOS ORAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72 pin giass-epoxy printed circuit board. 0.22nFdecoupling
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OCR Scan
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HYM532220A
32-bit
HY5117800B
22nFdecoupling
HYM532220AE/ASLE/ATE/ASLTE
HYM532220AEG/ASLEG/ATEG/ASLTEG
l25f3
17lMIN.
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PDF
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Untitled
Abstract: No abstract text available
Text: HY5117800 Series »HYUNDAI 2M X 8-bit CMOS ORAM DESCRIPTION The HY5117800 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5117800 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5117800
HY5117800
1AD08-10-MAY94
00031bÃ
HY5117800JC
HY5117800SLJC
HY5117800TC
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PDF
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Untitled
Abstract: No abstract text available
Text: • ‘H Y U N D A I * HY5117800C,HY5116800C > 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynam ic RAM organized 2 ,0 9 7 ,1 5 2 x 8-bit configuration with Fast P age m ode C M O S DRA M s. Fast Page mode is a kind of page mode which is useful for the read operation. T h e circuit and process design allow this
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OCR Scan
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HY5117800C
HY5116800C
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PDF
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cs40
Abstract: JT23
Text: HY5117800 Series •HYUNDAI 2M x 8-bit CMOS DRAM DESCRIPTION The HY5117800 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5117800 utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5117800
1ad08-10-m
4b75DÃ
D0031bÃ
HY5117800JC
HY5117800SLJC
cs40
JT23
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PDF
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HYM532814
Abstract: HY531000AJ HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC
Text: QUICK REFERENCE SIMM MODULE 5V SIMM TYPE SIZE 72 Pin 4MB DESCRIPTION 1M X 32 8 IM M 1Mx36 8M B 2M 2M 16MB 4M 4M 32M B 8M 8M NO TE : 4 X X X X X X 32 36 32 36 32 36 PART NO. SPEED REF. DEVICE USED HEIGHT EDO, S L HYM532124AW/ATW 60/70/80 IK HY5118164BUC/BTC x 2
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OCR Scan
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HYM532124AW/ATW
532100AM
HYM532120W/TW
HYMS32120AW/ATW
HY5118164BUC/BTC
HY514400AJ
HY5118160JC/TC
HY5118160BJC/BTC
HY531000AJ
HYM532814
HYM532224
hy5118160bjc
HYM532214AE60
HY5118160
HYM536A814BM
HYM536100AM
HY51178048J
HY5118160JC
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PDF
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HY5117800BT
Abstract: No abstract text available
Text: - K Y U H O A I HY5117804B,HY5116804B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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OCR Scan
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HY5117804B
HY5116804B
A0-A11)
HY5117800BT
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PDF
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r4kf
Abstract: HY53C464LS fr4k HY53C256LS HY531000J
Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S
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256Kx
64Kx4)
HY53C256S
HY53C256LS
HY53C256F
HY53C256LF
HY53C464S
HY53C464LS
HY53C464F
HY53C464LF
r4kf
fr4k
HY531000J
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PDF
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HY5118164B
Abstract: hy5118160b HY5118160 HY51V65400TC HY5117804B
Text: DRAM PRODUCT 16Mbit As of '96.3Q DESCRIPTION PART NO. 4M x 4 EDO,2< Ref. 3.3V PACKAGE OPTION ACCESS TIME ns OPERATING CURRENT (mA.MAX) STANDBY CURRENT (mA,MAX) TTL CMOS AVAILABILITY HY51V17404A SO JJSO P I (300mil) 60/70/80 120/100/90 l 0.5 NOW HY51V17404B
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OCR Scan
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16Mbit
HY51V17404A
HY51V17404B
300mil)
400mil)
HY5118164B
hy5118160b
HY5118160
HY51V65400TC
HY5117804B
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PDF
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HY5118160JC
Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
Text: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM
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OCR Scan
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HYM581000BM
HYM591000BM
SPEEp50/60/70
HY514400AJ
HY514400AJX2
HY531000AJX1
HYM584000AM
HYM584000DM
HYM594000AM
HYM594000DM
HY5118160JC
HY531000AJ
HY-53
HYM591000B
HYM536100AM
HYM532120W
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PDF
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HY5118160
Abstract: 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit
Text: “HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS 2. PRODUCT QUICK REFERENCE GUIDE
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OCR Scan
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256K-bits
HY53C256.
HY53C464
HY531000.
DB101-20-MAY94
HY5118160
256K 4bit DRAM
HY514260
HY51426
HY51V16100
HY531000
4K x 1 DRAM
256k 8bit
512k 4bit
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PDF
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HY51V18164
Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC
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OCR Scan
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256Kx4)
256x8)
128Kx16)
HY534256AJ
HY534256ALJ
HY512800J
HY512800LJ
HY512800SLJ
HY512264JC
HY512264LJC
HY51V18164
HY5118164
HY514260
HY51V65400
HY51V17804CJ
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PDF
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HY514260
Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
Text: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .
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OCR Scan
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HY531000A.
HY534256A.
256Kx4-bit,
HY512260.
128KX16-bit,
HY514260
HY5118160
HY5116160
HY5117404
HY51V65400
HY511616
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PDF
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