Untitled
Abstract: No abstract text available
Text: BUV41 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUV41
O204AA)
18-Jun-02
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BUV41
Abstract: No abstract text available
Text: BUV41 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUV41
O204AA)
31-Jul-02
BUV41
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Untitled
Abstract: No abstract text available
Text: BUV41 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUV41
O204AA)
16-Jul-02
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Untitled
Abstract: No abstract text available
Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BUV41 DESCRIPTION • Low Collector Saturation Voltage: VCE(sat)= 0.8V (Max.) @lc= 3A • High Switching Speed
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BUV41
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
BUV48I
BU808DXI
BD699
buv18a
BD241CFI
transistor 2SA1046
BUW52I
BU808DFI equivalent
BU724AS
2SA1046
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BDW16
Abstract: SM3159 2N2753 str16 SM317 2U75 2N1826 BUV41
Text: POWER SILICON NPN Item Number Part Number I C -5 10 15 20 30 35 40 45 50 -60 70 75 - 80 140 140 150 150 150 150 150 150 150 150 ~~6~~~~ ~e.!naex ~g ~~g 20 20 20 20 20 20 20 20 150 150 160 160 160 160 160 160 20 30 ~g ~~g 20 20 20 20 20 20 20 20 160 160 160
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MJ15003
RCA8638C
SML8753
SML8757
2N1825
2N2125
2N2741
2N2747
2N2753
2N2817
BDW16
SM3159
str16
SM317
2U75
2N1826
BUV41
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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STRS6307
Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173
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2N3054
2N32741
2N4240
2N4908
2N3054A
2N3766
2N4273
2N4909
2N3055
2N3767
STRS6307
STR5412
2N3055 TO-220
S2000A3
STRS6309
S2000a2
BDW36
2SC3883
strs6308
STR6020
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DK53
Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Text: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
DK53
dk52
BU724AS
mje2055
2n3055 replacement
BUX98PI
BD263
BD699
BD292
2N5037
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bu2527af
Abstract: wk16412 WK16413 WK16414 Tesla katalog VQE24 VQE14 4DR823B kr206 5DR801B
Text: Pøehled diskrétních polovodièových souèástek TESLA a dalích dováených typù z nìkdejí RVHP TRANZISTORY TYRISTORY TRIAKY DIAKY DIODY LED DISPLEJE OPTOÈLENY a dalí prvky
spolu s náhradami
a nejpouívanìjí standardní
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roku1984/85,
VQB200
VQB201
VQC10
VQE11
VQE12
VQE13
VQE14
VQE21
VQE22
bu2527af
wk16412
WK16413
WK16414
Tesla katalog
VQE24
4DR823B
kr206
5DR801B
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BUV41
Abstract: 7D transistor
Text: SGS-THOMSON BUV41 FAST SWITCHING POWER TRANSISTOR • FAST SWITCHING TIMES ■ LOW SWITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERA TION ABSOLUTE MAXIMUM RATINGS Symbol > a > o o > V Param eter Collector-emitter Voltage
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BUV41
BUV41
7D transistor
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Untitled
Abstract: No abstract text available
Text: 4ÔE D 0 1 3 3 1 0 7 GGDD42D 7 b l H S N L B G137 chip family The G 137 chip family is an NPN bipolar multi-epitaxial planar transistor intended for applications requiring fast switching, low saturation power devices. SEMELAB LT]> 'î- 3 5 'O l • UP TO 35 AMPS
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GGDD42D
-550/xm
19mils
IMPRUV40
BUX10
BDY58
BUX11
BUW91
BUX12
BUV42
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BUW23
Abstract: No abstract text available
Text: SEMELAB LTD 37E J> 6133187 DDDOOSb 7 • SMLB SEMELABI 1VpeN0- Option'111' Polarity Packa9e VcEO t ^ hFE« VCE/*C BUV18 BUV19 BUV20 BUV21 BUV22 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN NPN NPN 11 * * * * TO 3 T03 T03 TO 3 T03 60 80 125 200 250 90 50
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BUV18
BUV19
BUV20
BUV21
BUV22
20min
BUW23
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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BUV41
Abstract: No abstract text available
Text: • 7^53537 0056751 7 ■ S C ô « ^ S - T o H m O M [ l O T S O "T-33r^3t._ N ( s [ * S B S G S-THOMSON F A S T U V 4 1 30E T> S W IT C H IN G P O W E R T R A N S IS T O R ■ FAST SW ITCHING TIM ES . LOW SWITCHING LOSSES ■ VER Y LOW SATURATION VOLTAGE AND
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T-33r
BUV41
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BUD48
Abstract: BUD48DI BUD 48 BUX23 BUV41 BUV40 BUW38 BUW52 bux348 TR MJE 350
Text: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL M0 glJ3 ILdOT©[ l(SS POWER BIPOLAR FAST SWITCHING TRANSISTORS AND DARLINGTONS Internal schematic diagrams Darlingtons except BUD 48 Dl Bipolar transistors 120 / 300 V VCBO RANGE •c Vc b O v CEO ptot <A) (V) (V)
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D44Q1
D44Q3
D44Q5
BUV27
BUD48
BUD48DI
BUD 48
BUX23
BUV41
BUV40
BUW38
BUW52
bux348
TR MJE 350
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BUD48DI
Abstract: BUD48 BUV41 BUX 115 BUV18 BUD 48 D44Q5 BUW38 BUV26 BUV40
Text: SGS-THOMSON M0 glJ3 ILdOT©[ l(SS GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR FAST SWITCHING TRANSISTORS AND DARLINGTONS Internal schematic diagrams Darlingtons except BUD 48 Dl Bipolar transistors 120 / 300 V VCBO RANGE •c Vc b O v CEO ptot <A) (V) (V)
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D44Q1
D44Q3
D44Q5
BUV27
BUD48DI
BUD48
BUV41
BUX 115
BUV18
BUD 48
BUW38
BUV26
BUV40
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mje520
Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
Text: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50
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BD433
MJE200
MJE520
BD435
2N4921
2IM5190
2IM6037
MJE521
MJE180
BD135
SGS1F444
SGSD00030
e13008
BUT23
2m3771
BUT62
BUW42AP
2n5337
BUW32AP
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BUS11A
Abstract: BUV11 BUT91
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUR51 BUR51S BUR52 BUR52S BUS11 BUS11 CECC BUS11A BUS11A CECC BUS 12 BUS12A BUS 13 BUS13A BUSI 4 BUS14A BUS50 BUS51 BUS52 BUT13 BUT13P BUT70 BUT70MC BUT72 BUT90 BUT90C BUT91 BUT92 BUT92A BUT92AS
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BUR51
BUR51S
BUR52
BUR52S
BUS11
BUS11A
BUS12A
BUS13A
BUV11
BUT91
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JE350
Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
Text: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168
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BD135
BD136
BD137
BD138
BD139
BD140
BD142
BD144
BD157
BD158
JE350
je180
MJ13004
TP33C
BD325
JE172
BDX48
JE340
bd160
BUT55
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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KF520
Abstract: KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784
Text: TESLA ECIMEX, a. s. T E /1 \L /I Sem iconductor Discrete Devices Sem iconductor Discrete Devices CONTENTS . 3 TRANSISTORS. 5
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15Blatnà
KF520
KT725
diac kr 206
KT707
KD502
kt201
KT206-200
KU607
KYS 30 40 diode
KT784
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BUT13P
Abstract: BLN20 BUT14 SOT93 BUV62 BUS50 BUS13A BUV24 BUV41 but72
Text: *4ö E ì> Ö1331Ö7 GG004S4 044 •SML B SEMELABE REL & HIGH ENERGY BI-POLAR TRANSISTORS Type Number BUS13 BUS13A BIJS14 BUSINA BUS50 BUS51 BUS52 BUT11 ia BUT13 BUT13P BUT14 BUT34 BIJT35 BUT70 IMJT72 BUT90 BOT91 BUT92 BUT92A KIVION BiJVll BUV18 BUV19 BIJV20
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GG004S4
BUS13
15min
BUS13A
BUS14A
BUS50
20min
BUS51
BUT13P
BLN20
BUT14
SOT93
BUV62
BUV24
BUV41
but72
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Untitled
Abstract: No abstract text available
Text: THOMSON MIL E T SPATIAUX SSE D • TD2bö7B ODOGHTO ÔTT ■ T H C M ' T ' - j y * f DISCRETE COMPONENTS DESCRIPTION PRODUCT PACKAGE o o ■ti» o .E o “O •*> SÖ <Ö BIPOLAR POWER TRANSISTORS BUT 90 V C E O = 125 V 1C = 5 0 A ■ BUT 91 V C E O (s u s ) = 2 0 0 V
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BUT92A
BUV18
BUV19
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