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    BSS78 Search Results

    BSS78 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BSS78 Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=200 / Ic=250 / Hfe=40-250 / fT(Hz)=50M / Pwr(W)=0.5 Original PDF
    BSS78 Motorola European Master Selection Guide 1986 Scan PDF
    BSS78 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BSS78 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BSS78 Unknown Shortform Transistor Datasheet Guide Short Form PDF

    BSS78 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: BSS78 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		PDF BSS78 O206AA) 10/30m 19-Jun-02

    BSS78

    Abstract: TO206AA
    Text: BSS78 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		PDF BSS78 O206AA) 10/30m 2-Aug-02 BSS78 TO206AA

    BSS78

    Abstract: No abstract text available
    Text: BSS78 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		PDF BSS78 O206AA) 10/30m 16-Jul-02 BSS78

    50N240

    Abstract: JE9093C LOW-POWER SILICON PNP HSE194
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 200 200 200 200 200 200 200 200 200 200 FMMTA93 BSSn BSSn MPSA93 ESM693 2SA1330 2SA133005 2SA1255 2SA1376AL 200 200 200 200 200 200 200 200 200 85 90 95 772 30 30 30 30 30 30 30


    Original     		PDF MPS-A93 BF693 MPSA930 2N6432 PH5415 PN5415 2SB718 BSS74S 50N240 JE9093C LOW-POWER SILICON PNP HSE194

    BF689

    Abstract: 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36
    Text: STI Type: BF200 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200 VCBO: 30 VCEO: 20 hFE min: 15 hFE max: hFE A: 3.0 VCE: VCE A: hfe: fT: 550 Case Style: TO-206AF/TO-72: Industry Type: BF200 STI Type: BF183 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200


    Original     		PDF BF200 O-206AF/TO-72: BF183 BF206 BF208 BF689 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36

    BU104

    Abstract: BSX21 BU103 8SS44
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o Description BS250CSM4 8SS44 BSS44 CECC BSS50 BSS51 BSS52 BSS60 BSS61 BSS62 BSS71 BSS72 BSS73 BSS74 BSS74R BSS75 BSS76 BSS77 BSS78 BSV15 BSV16 BSV17 BSV60 BSV64 BSV64 CECC BSV64-SM BSV91 BSW66 BSW66CECC


    OCR Scan     		PDF BS250CSM4 8SS44 BSS44 BSS50 BSS51 BSS52 BSS60 BSS61 BSS62 BSS71 BU104 BSX21 BU103

    2N2222A JANTX

    Abstract: 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA MM6427
    Text: METAL SMALL-SIGNAL TRANSISTORS continued Darlington Transistors These transisto rs are ch a ra c te rize d for very high g ain and input im ped an ce a p p lic a tio n s . D evices are of m o nolithic con­ struction. 'c Device Type V(BR) CEO Volts Min mA


    OCR Scan     		PDF MM6427 BSS52 BSS51 BSS50 2N5229 2N1613 2N2369 2N3440 2N1711 2N2369A 2N2222A JANTX 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


    OCR Scan     		PDF

    HEP transistors

    Abstract: motorola hep BSS71 MOTOROLA 2N3440 MOTOROLA BF337 MM421 transistors for uhf oscillators BSS72 2n3439 motorola MM6427
    Text: METAL SMALL-SIGNAL TRANSISTORS continued Darlington Transistors These transisto rs are ch a ra c te rize d for very high g ain and input im ped an ce a p p lic a tio n s . D evices are of m o nolithic con­ struction. 'c Device Type V(BR) CEO Volts Min mA


    OCR Scan     		PDF MM6427 BSS52 BSS51 BSS50 BSS73 BSS72 BSS71 BC394 2N3439* MM421 HEP transistors motorola hep BSS71 MOTOROLA 2N3440 MOTOROLA BF337 transistors for uhf oscillators 2n3439 motorola

    BSS78

    Abstract: No abstract text available
    Text: MOTOROLA SC {XSTRS/R Rating F> L3b72S4 bflE D Symbol Value Unit C o llector-E m itter Voltage v CEO 250 Vdc Collector-Base Voltage VCBO 250 Vdc Em itter-Base Voltage v EBO 6.0 Vdc C o lle ctor C urrent — Continuous 'c 1.0 Ade Total Device D issipation ci T /\ = 25°C


    OCR Scan     		PDF b3b75SM BSS78 O-205AD)

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    BSW66

    Abstract: BU208A BSW67 BLY49 BLY49A BLY50 BLY50A BSS15 BSS33 BSS50
    Text: 4flE D • fll331fl7 0 0 0 0 4 5 2 SEMELABL 271 ■ S H L B _ SEMELAB BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number BI.YA8A BLYA9 BLYA9A BLY50 BLY50A BSS15 BSS17 BSS33 B.SSAA BSS50 BSS51 DSS52 BSS60 BSS61 BSS62 BSS71 DSS72 BSS73


    OCR Scan     		PDF BLY49 BLY49A BLY50 BLY50A BSS15 BSS33 120typ 2/10m 40min BSS50 BSW66 BU208A BSW67

    bsx27

    Abstract: No abstract text available
    Text: SEMELAB LTD BIBBIA? □□□□□S3 T • S M L B T - ^ 7 . i « A l l . . . . U j. M . J “ 0/ J T- 33-G1 * 'c hF E @ Vce /'C fT Pb 60 200 250 300 200 5 0.5 0.5 0.5 0.5 40min 40-250 40-250 40-250 35-150 2/2 10/30m 10/30m 10/30m 10/30m 70M 50M 50M 50M


    OCR Scan     		PDF 33-G1 40min 10/30m BSS44 BSS71 BSS72 BSS73 bsx27

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


    OCR Scan     		PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367