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    BD201F

    Abstract: BDX77F BD203F BD202F BD204F BDX78F
    Text: J PHILIPS INTERNATIONAL SbE D • BD201F; BD203F; BDX77F 7110a2b 0Gl+2ÛDfi Ô4S ■ PHIN T - 3 3 ' O cf SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 202F, BD204F and B D X 78F .


    OCR Scan     		PDF BD201F; BD203F; BDX77F 7110a2b T-33-0 OT186 BD202F, BD204F BDX78F. BD201F BDX77F BD203F BD202F BDX78F

    I8212

    Abstract: No abstract text available
    Text: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL 5 bE D I 7 1 1 DflEb [IDM3 4 bb 7 G 0 « P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.


    OCR Scan     		PDF TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF OT186 TIP29F, TIP29AF, TIP29BF, TIP29CF I8212

    Untitled

    Abstract: No abstract text available
    Text: TIP32F; 32AF TIP32BF; 32CF TIP32DF PHILIPS INTERNATIONAL SbE D • 711002b 00434=10 210 M P H I N T -J 3 -I 7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio am plifier output stages, general purpose amplifiers, and high-speed


    OCR Scan     		PDF TIP32F; TIP32BF; TIP32DF 711002b T1P31BF,

    TIP41CF

    Abstract: TIP41F TIP41AF TIP41BF TIP42BF TIP42F
    Text: _ PHILIPS TIP42F; 42A F TIP42BF; 42CF J^ INT ERN AT ION AL SbE D • 7110ÛSb Ü04354S 15Û « P H I N r - 3 ? - / < 7 SILIC O N EPITAXIAL P O W E R T R A N S IS T O R S PNP silicon epitaxial power transistors, e a c h in a S O T 1 8 6 envelope with an electrically insulated


    OCR Scan     		PDF TIP42F; TIP42BF; 711002b 04354S eachinaSOT186 TIP41F, TIP41AF, TIP41BF TIP41CF. TIP42F TIP41CF TIP41F TIP41AF TIP42BF

    BDT64AF

    Abstract: BDT64BF BDT64CF BDT64F BDT65AF BDT65BF BDT65CF BDT65F r64A 004887
    Text: BDT64F; BDT64AF BDT64BF: BDT64CF PHILIPS INTERNATIONAL SbE T> • VllDflEti 00432Ö2 CHI ■ P H I N SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a SO T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT64F; BDT64AF BDT64BF: BDT64CF OT186 BDT65F, BDT65AF, BDT65BF BDT65CF. BDT64F! BDT64AF BDT64BF BDT64CF BDT64F BDT65AF BDT65CF BDT65F r64A 004887

    TIP29F

    Abstract: TIP30CF TIP29AF TIP29BF TIP29CF TIP29DF TIP30AF TIP30BF TIP30DF TIP30F
    Text: TIP29F TIP29AF; TIP29BF TIP29CF; TIP29DF PHILIPS INTERNATIONAL SbE D • 7110flSb 0043452 SILICON EPITAXIAL POWER TRANSISTORS lib ■ P H I N ' 7 -3 3 -0 7 NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended for use in audio output stages, general purpose amplifier and high-speed switching applications.


    OCR Scan     		PDF TIP29F TIP29AF; TIP29BF TIP29CF; TIP29DF 7110flSb OT186 TIP30F, TIP30AF, TIP30BF, TIP29F TIP30CF TIP29AF TIP29BF TIP29CF TIP29DF TIP30AF TIP30BF TIP30DF TIP30F

    t33b

    Abstract: No abstract text available
    Text: 45E D PHILIPS INTERN ATIONAL a 711002b 0D31DTS 2 E 3 PH IN BUV28F BUV28AF T-33M I SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 1 8 6 envelope w ith electrically isolated mounting base, intended fo r use in converters,' inverters, switching regulators, m otor control


    OCR Scan     		PDF 711002b 0D31DTS BUV28F BUV28AF T-33M t33b

    Untitled

    Abstract: No abstract text available
    Text: ! BBS33F; 3D93Sf ' BD937F; BD939F BD941F _ 711002b 01343052 3=12 H P H I N - PHILIPS INTERNATIONAL SbE D • SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.


    OCR Scan     		PDF BBS33F; 3D93Sf BD937F; BD939F BD941F 711002b OT186 BD934F, BD936F, BD938F,

    Untitled

    Abstract: No abstract text available
    Text: t 353*131 □ a ifla s i 1 • DEVELOPMENT DATA BUT22BF BUT22CF This data sheet contains advance information and specifications are subject to change without notice* N AMER PHILIPS/DISCRETE 35E D SILICON DIFFUSED POWER TRANSISTORS T - 33-0? High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope intended for use


    OCR Scan     		PDF BUT22BF BUT22CF OT186 bb53T31 T-33-09

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D • bbS 3 T 31 0 DEflE57 =^1 H A P X BU506F BU506DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn transistor in a SOT186 envelope, intended fo r use in horizontal deflection circuits o f colour television receivers and in line-operated switch-mode applications.


    OCR Scan     		PDF DEflE57 BU506F BU506DF OT186 BU506DF BU506DF)

    BDT64C

    Abstract: BOT64 BOT64B
    Text: BDT64F; BDT64AF BDT64BF; BDT64CF PHILIPS INTERNATIONAL SbE D • VllDflEb 0043202 OTl ■ P H I N SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a SOT186 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT64F; BDT64AF BDT64BF; BDT64CF OT186 BDT65F, BDT65AF, BDT65BF BDT65CF. BDT64F BDT64C BOT64 BOT64B

    BDT65CF

    Abstract: BDT65AF 65AF BDT64AF BDT64BF BDT64CF BDT64F BDT65BF BDT65F BDT65C
    Text: BDT65F; BDT65AF ^^BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbìT] I 7110ä 2b 00432^0 M S ’ì I I P H I N T - 3 3 ~z°l SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting


    OCR Scan     		PDF BDT65F; BDT65AF BDT65BF; BDT65CF aSOT186 BDT64F, BDT64AF, BDT64BF BDT64CF. BDT65F BDT65CF BDT65AF 65AF BDT64AF BDT64CF BDT64F BDT65BF BDT65C

    BD204

    Abstract: BD202F til 31a BD201F BD203F BD204F BDX77F BDX78F Philips 119
    Text: _ PHILIPS INTERNATIONAL SbE D • BD202F; BD204F BDX78F J 7110Û2L 0042fl5b flbO M P H I N T-33-l7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors inSOT186 envelopes with an electrically insulated mounting base.


    OCR Scan     		PDF BD202F; BD204F BDX78F 7110fl2b D042fl5b T-33-1 inSOT186 BD201F, BD203F BDX77F BD204 BD202F til 31a BD201F BD204F BDX78F Philips 119

    32-AF

    Abstract: eto81 BDT31AF BDT31BF BDT31CF BDT31DF BDT31F BDT32BF BDT32DF BDT32F
    Text: • 1^53131 0011705 1 ■ BDT32F; 32AF 55E J> N AMER PHILIPS/DISCRETE BDT32DF 32° Fr y ^ T-3S-J SILICON EPITAXIAL P O W E R TRANSISTORS PNP silicon power transistors each, in a SOT186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed


    OCR Scan     		PDF bb53131 BDT32F; BDT32BF; BDT32DF OT186 BDT31F, BDT31AF, BDT31BF, BDT31CF, BDT31DF. 32-AF eto81 BDT31AF BDT31BF BDT31CF BDT31DF BDT31F BDT32BF BDT32DF BDT32F

    TIP32AF

    Abstract: 31af 31df transistor tip31 TIP31BF TIP31DF TIP31F TIP32BF TIP32CF TIP32DF
    Text: TIP31F; 31AF TIP31BF; 31CF TIP31DF PHILIPS INTERNATIONAL SfciE D • V 7110Ô5L 00M34Ô2 =}S3 * P H I N T- 3 3 -0 7 S IL IC O N EPITA XIA L PO W E R T R A N S IS T O R S N PN silicon power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base.


    OCR Scan     		PDF TIP31F; TIP31BF; TIP31DF 00M34Ã OT186 TIP32F, TIP32AF, TIP32BF, TIP32CF TIP32DF. TIP32AF 31af 31df transistor tip31 TIP31BF TIP31DF TIP31F TIP32BF TIP32DF

    TIP32AF

    Abstract: TIP32DF TIP31AF TIP31BF TIP31CF TIP31F TIP32BF TIP32F 32-AF
    Text: TIP32F; 32 A F TIP32BF; 32CF TIP32DF PHILIPS INTERNATIONAL SbE D • 7110a2b 0 0 4 3 ^ 0 210 M P H I N T - 3 3 - 1 7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base.


    OCR Scan     		PDF TIP32F; TIP32BF; TIP32DF 711002b OT186 TIP31F, TIP31AF, TIP31BF, TIP31CF andTIP31DF. TIP32AF TIP32DF TIP31AF TIP31BF TIP31F TIP32BF TIP32F 32-AF

    BF120

    Abstract: No abstract text available
    Text: TIP41F; 41AF TIP41BF; 41 CF PHILIPS INTERNATIONAL 5bE J> • 711002b 004352b TOS M P H I N T~33 ~ 0 SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are T IP 4 2 F , T IP 4 2 A F , T IP 42B F and T IP 42C F.


    OCR Scan     		PDF TIP41F; TIP41BF; 711002b 004352b 100TIP41F; D0M3531 T-33-09 BF120

    Untitled

    Abstract: No abstract text available
    Text: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF PHILIPS INTERNATIONAL SbE D • 711002b 0043452 lib ■ P H I N ' SILICO N EPITAXIAL POW ER TR A NSISTO R S T-33-07 NPN silicon power transistors in a S O T 186 envelope w ith an electrically insulated mounting base,


    OCR Scan     		PDF T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF 711002b T-33-07 TIP29F

    Untitled

    Abstract: No abstract text available
    Text: BD949F; BD951F BD953F; BD955F PHILIPS INTERNATIONAL SbE D I 7110fl2b 004310b ST3 « P H I N SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 9 5 0 F , B D 9 5 2 F , BD 954F and B D 956F.


    OCR Scan     		PDF BD949F; BD951F BD953F; BD955F 7110fl2b 004310b 7110aEb QDM3107

    bot64

    Abstract: BDT64A BDT64AF BDT64BF BDT64C BDT64CF BDT64F
    Text: BDT64F BDT6 11BDT64BF BDT6 Silicon Darlington power transistors Fig. 5 Safe Operating Area; = 25 °C . I Region of permissible DC operation. (II) Permissible extension for repetitive pulse operation. (1) Ptot max anc* Ppeak max lines. (2) Second-breakdown limits.


    OCR Scan     		PDF BDT64F BDT64A BDT64BF BDT64C 7Z21455 bot64 BDT64A BDT64AF BDT64C BDT64CF

    BDT91F

    Abstract: BDT92F BDT93F BDT95F BDT96F
    Text: BDT91F; BDT93F BDT95F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F. Q UICK REFERENCE D A T A BDT91F 93F 95F


    OCR Scan     		PDF BDT91F; BDT93F BDT95F OT186 BDT92F, BDT94Fand BDT96F. BDT91F OT186. bbS3T31 BDT92F BDT95F BDT96F