T1P29F Search Results

Contextual Info: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages, general purpose amplifier and high-speed switching applications.

TIP290

Abstract: TIP29CF TIP30CF TIP29AF TIP29BF TIP29DF TIP29F TIP30AF TIP30BF TIP30DF
Contextual Info: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o u tp u t stages, general purpose am plifier and high-speed switching applications.

Contextual Info: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF PHILIPS INTERNATIONAL SbE D • 711002b 0043452 lib ■ P H I N ' SILICO N EPITAXIAL POW ER TR A NSISTO R S T-33-07 NPN silicon power transistors in a S O T 186 envelope w ith an electrically insulated mounting base,

Contextual Info: TIP29D, TIP29E, T1P29F NPN SIUCON POWER TRANSISTORS Copyrtghl €> 1997, Pow er Innovations Limited, U K _ • 30 W at 25°C Case Temperature • 1 A Continuous Collector Current • 3 A Peak Collector Current • Customer-Specified Selections Available

Contextual Info: TEXA S IN ST R -COPTOÏ bS D E ^ j f l T t . l 7 S L 0□ 3 b 744 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C r 36744 - j j - o ? TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F N-P-N SILICON POWER TRANSISTORS J U LY 1 9 68 - RE V ISE D OCTO BER 1 9 84 •

C2688

Abstract: C 2688 TEXAS INSTRUMENTS TIP29 c2688 transistor 74ti c2688 L TIP29 TIP29A TIP29B TIP29D
Contextual Info: INSTR -COPTO* bS »E^jflTt.l7SL 0□ 3b744 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C 36744 r - j j - o ? TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F N-P-N SILICON POWER TRANSISTORS JU LY 1968 - REVISED OCTOBER 1984 • Designed for Complementary Use With TIP30 series