Untitled
Abstract: No abstract text available
Text: BDT91F; BDT93F BDT95F PHILIPS INTERNATIONAL SbE D • 7 1 1 D Ô 2 b G G M 3 3 3 D b74 « P H I N SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F.
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BDT91F;
BDT93F
BDT95F
OT186
BDT92F,
BDT94Fand
BDT96F.
OT186.
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Untitled
Abstract: No abstract text available
Text: BDT91F; BDT93F BDT95F JV SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F. QUICK REFERENCE DATA BDT91F 93F 95F
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OCR Scan
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PDF
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BDT91F;
BDT93F
BDT95F
OT186
BDT92F,
BDT94Fand
BDT96F.
BDT91F
003477b
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BDT91F
Abstract: BDT92F BDT93F BDT95F BDT96F
Text: BDT91F; BDT93F BDT95F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F. Q UICK REFERENCE D A T A BDT91F 93F 95F
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OCR Scan
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PDF
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BDT91F;
BDT93F
BDT95F
OT186
BDT92F,
BDT94Fand
BDT96F.
BDT91F
OT186.
bbS3T31
BDT92F
BDT95F
BDT96F
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