BDT95F Search Results

BDT95F Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BDT95F		Philips Semiconductors	Silicon Epitaxial Power Transistors		Original	PDF
BDT95F		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF
BDT95F		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
BDT95F		Philips Semiconductors	SILICON EPITAXIAL POWER TRANSISTORS		Scan	PDF

BDT95F Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2u 62 diode Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20	Original	SDT3208 SDT7140 BDT95 BDT96 2u 62 diode KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808	PDF
KT808AM Abstract: 2SD867Y KT808a BDX51 2N3076 kt808 7F54 2SC1343 2sd339 BD245C Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 >= -80 BDS12 SDT7473 2N4070 2N6232 SDT7140 SDT7140 SDT7140 SDT7B03 SDT7B03 SDT7B03 2SC3568L 2N5289 PT2986 2SC3568K 2N2227 2N3471 2N2231 2N3475 S2N5541-4 S2N5541-5 S2N5542-4	Original	O-247 OT-186 O-111 T0-61 KT808AM 2SD867Y KT808a BDX51 2N3076 kt808 7F54 2SC1343 2sd339 BD245C	PDF
KT808AM Abstract: KT808a kt808 2N3426 2N3076 solitron 2N3455 siemens SID 3 2N3414 GE 2n3400 2N3432 Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 >= -80 BDS12 SDT7473 2N4070 2N6232 SDT7140 SDT7140 SDT7140 SDT7B03 SDT7B03 SDT7B03 2SC3568L 2N5289 PT2986 2SC3568K 2N2227 2N3471 2N2231 2N3475 S2N5541-4 S2N5541-5 S2N5542-4	Original	2N3495S 2N3496 2N3497 2N3498 2N3499 2N3500 2N3501 2N3502 KT808AM KT808a kt808 2N3426 2N3076 solitron 2N3455 siemens SID 3 2N3414 GE 2n3400 2N3432	PDF
BDT95F Abstract: BDT91F BDT92F BDT93F BDT96F Text: BDT91F; BDT93F BDT95F pHILIPS INT ERNATIONAL SbE D • 711GÔSb G04333D b74 ■ P H I N 7^ - 3 3 - ^ ? SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a S O T186 envelope w ith an electrically insulated mounting base. PNP complements are B D T 92F , BD T94Fand B D T 96F .	OCR Scan	BDT91F; BDT93F BDT95F 711DflSb D04333D BDT92F, BDT94Fand BDT96F. BDT91F OT186. BDT95F BDT92F BDT96F	PDF
Untitled Abstract: No abstract text available Text: BDT91F; BDT93F BDT95F PHILIPS INTERNATIONAL SbE D • 7 1 1 D Ô 2 b G G M 3 3 3 D b74 « P H I N SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F.	OCR Scan	BDT91F; BDT93F BDT95F OT186 BDT92F, BDT94Fand BDT96F. OT186.	PDF
BDT91F Abstract: BDT92F BDT94F BDT95F BDT96F BDT96 Text: BDT92F; BDT94F BDT96F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOTl86 envelope with an electrically insulated mounting base. NPN complements are BDT91F, BDT93Fand BDT95F. QUICK REFERENCE DATA BDT92F 94F 96F -VC BO	OCR Scan	BDT92F; BDT94F BDT96F aSOT186 BDT91F, BDT93Fand BDT95F. bdt92f DO3470S BDT91F BDT95F BDT96F BDT96	PDF
Untitled Abstract: No abstract text available Text: BDT92F; BDT94F BDT96F _ y v SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOTl86 envelope with an electrically insulated mounting base. NPN complements are BDT91F, BDT93Fand BDT95F.	OCR Scan	BDT92F; BDT94F BDT96F aSOTl86 BDT91F, BDT93Fand BDT95F. BDT92F	PDF
T-33-O Abstract: BDT94F BDT91F BDT92F BDT95F BDT96F 043341 Text: BDT92F; BDT94F BDT96F I SbE T> PHILIPS INTERNATIONAL m 7110ÖEb 004334G 513 BIPHIN SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each inaSOT186 envelope with an electrically insulated mounting base. NPN complements are BDT91F, BDT93Fand BDT95F.	OCR Scan	BDT92F; BDT94F BDT96F 711002b DQ4334G T-33-O inaSOT186 BDT91F, BDT93Fand BDT95F. T-33-O BDT91F BDT92F BDT95F BDT96F 043341	PDF
Untitled Abstract: No abstract text available Text: BDT91F; BDT93F BDT95F JV SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F. QUICK REFERENCE DATA BDT91F 93F 95F	OCR Scan	BDT91F; BDT93F BDT95F OT186 BDT92F, BDT94Fand BDT96F. BDT91F 003477b	PDF
BDT91F Abstract: BDT92F BDT93F BDT95F BDT96F Text: BDT91F; BDT93F BDT95F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F. Q UICK REFERENCE D A T A BDT91F 93F 95F	OCR Scan	BDT91F; BDT93F BDT95F OT186 BDT92F, BDT94Fand BDT96F. BDT91F OT186. bbS3T31 BDT92F BDT95F BDT96F	PDF
2009-6F Abstract: No abstract text available Text: BDT92F; BDT94F BDT96F PHILIPS INTERNATIONAL SbE ]> • 711DÖEfc> Q 0 4 3 3 M D S13 ■ P H I N T -3 3 -O t SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOT186 envelope with an electrically insulated mounting base.	OCR Scan	BDT92F; BDT94F BDT96F aSOT186 BDT91F, BDT93Fand BDT95F. BDT92F 711Qfl5b T-33-09 2009-6F	PDF
BPW22A Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey	OCR Scan	BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8	PDF
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350	PDF
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc	PDF