Untitled
Abstract: No abstract text available
Text: PJP110A PNP Epitaxial Silicon DarlingtonTransistor MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Collector current 10A • Collector dissipation Pc =75W Tc = 25℃ TO-220 ORDERING INFORMATION Device Operating Temperature Package PJP110ACZ -20℃～+85℃
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PJP110A
O-220
PJP110ACZ
O-220
-10mA,
-600mA
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IC 0116
Abstract: ic 4440 IC 0116 DC 75W PNP DARLINGTON PJP110A PJP110ACZ
Text: PJP110A PNP Epitaxial Silicon DarlingtonTransistor MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Collector current 10A • Collector dissipation Pc =75W Tc = 25℃ TO-220 ORDERING INFORMATION Device Operating Temperature Package PJP110ACZ -20℃〜+85℃
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PJP110A
O-220
PJP110ACZ
IC 0116
ic 4440
IC 0116 DC
75W PNP
DARLINGTON
PJP110A
PJP110ACZ
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75W PNP
Abstract: darling DARLINGTON PJP110A PJP110ACZ darlingtontransistor
Text: PJP110A PNP Epitaxial Silicon DarlingtonTransistor MEDIUM PO WER LINEAR SWITCHING APPLICATIO NS • Collector current 10A • Collector dissipation Pc =75W Tc = 25℃ TO-220 ORDERING INFORMATION Device Operating Temperature Package PJP110ACZ -20℃～+85℃
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PJP110A
O-220
PJP110ACZ
-600mA
75W PNP
darling
DARLINGTON
PJP110A
PJP110ACZ
darlingtontransistor
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MJE2955T
Abstract: 75W PNP
Text: SILICON P LASTIC POWER TRANSISTOR PNP MJE2955T 10A 75W Technical Data …designed for general-purpose switching and amplifier application. F DC Current Gain - h FE = 20 – 100 @ IC = 4Adc F Collector-Emitter Saturation Voltage – VCE sat = 1.1 Vdc (Max) @ IC = 4Adc
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MJE2955T
O-220
500kHz
MJE2955T
75W PNP
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2510T
Abstract: TIP35C TIP36C
Text: SEMICONDUCTOR TIP36C TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌRecommended for 75W Audio Frequency C Amplifier Output Stage. J H ᴌComplementary to TIP35C. G ᴌIcmax:-25A. L D d MAXIMUM RATING Ta=25ᴱ
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TIP36C
TIP35C.
2510T
TIP35C
TIP36C
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75W PNP
Abstract: TIP35C TIP36C TIP35C transistor TIP35CG TO-3P* tip35c
Text: SEMICONDUCTOR TIP36C TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A I FEATURES E Recommended for 75W Audio Frequency C Amplifier Output Stage. J H Complementary to TIP35C. G Icmax:-25A. L D d MAXIMUM RATING Ta=25
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TIP36C
TIP35C.
-50mA,
75W PNP
TIP35C
TIP36C
TIP35C transistor
TIP35CG
TO-3P* tip35c
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TIP36CA TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 75W Audio Frequency H I Complementary to TIP35CA. R C J Amplifier Output Stage. G Icmax:-25A. D L E MAXIMUM RATING Ta=25
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TIP36CA
TIP35CA.
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TIP36CA
Abstract: No abstract text available
Text: SEMICONDUCTOR TIP36CA TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 75W Audio Frequency H I Complementary to TIP35CA. R C J Amplifier Output Stage. G Icmax:-25A. D L E MAXIMUM RATING Ta=25
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TIP36CA
TIP35CA.
TIP36CA
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3055t
Abstract: MJE2955T MJE305 MJE3055T 75W PNP
Text: MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation-PD = 75W at TC = 25°C. • DC current gain hFE = 20 Minimum at IC = 4.0A.
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MJE2955T,
3055T
400mA.
3055t
MJE2955T
MJE305
MJE3055T
75W PNP
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semelab 2N6287
Abstract: 2N6300J 2n6278 to63
Text: Search Results Part number search for devices beginning "2N6298" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N6298 PNP TO66 60V 8A 750 18000 3/4 4MHz
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2N6298"
2N6298
2N6298-JQR-B
2N6276"
2N6276
2N6276A
2N6276A-JQR-B
2N6276-JQR-B
2N6374"
2N6374
semelab 2N6287
2N6300J
2n6278 to63
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Untitled
Abstract: No abstract text available
Text: Search Results Part number search for devices beginning "2N6298" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N6298 PNP TO66 60V 8A 750 18000 3/4 4MHz
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2N6298"
2N6298
2N6298-JQR-B
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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darlingtontransistor
Abstract: No abstract text available
Text: PJP11OA PNP Epitaxial Silicon DarlingtonTransistor MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-22O • Collector current 10A • Collector dissipation Pc =75W Tc = 25 °C \ ABSOLUTE MAXIMUM RATINGS (Ta = 25 #C) Symbol Rating Unit Collector-Base Voltage
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PJP11OA
O-22O
Collec008
darlingtontransistor
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Untitled
Abstract: No abstract text available
Text: Semiconductor TIP110A PNP Epitaxial Silicon Transistor MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Collector current 10A • Collector dissipation Pc =75W Tc = 25 'c [ABSOLUTE MAXIMUM RATINGS (Ta - 25 X. 1 I Symbol Rating Unit Collector-Base Voltage
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TIP110A
-600mA
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Untitled
Abstract: No abstract text available
Text: Semiconductor TIP127A PNP Epitaxial Silicon Transistor MEDIUM PO W ER LINEAR SW ITCHING APPLICATIONS • Collector current 10A • Collector dissipation Pc =75W Tc = 25 “c (ABSOLUTE MAXIMUM RATINGS tT a = 2 5 X. ) Characteristic Collector-Base Voltage
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TIP127A
-10mA,
-600mA
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TIP35C
Abstract: TIP36C TIP35C transistor
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA TIP36C TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to TIP35C. • Recommended for 75W Audio Frequency Amplifier Output Stage. • Icmax:-25A MAXIMUM RATINGS Ta=25°C
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TIP36C
TIP35C.
-100V,
-50mA,
TIP35C
TIP36C
TIP35C transistor
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Untitled
Abstract: No abstract text available
Text: TIP110A PNP Epitaxial Silicon Transistor Semiconductor MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Collector dissipation Pc =75W Tc = 25 “c (ABSOLUTE MAXIMUM RATINGS <Ta = 2 5 K\ I Symbol Rating Unit Collector-Base Voltage V CBO -20 V Collector-Emitter Voltage
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TIP110A
-600mA
000131b
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TIP110A
Abstract: No abstract text available
Text: ISemiconductor TIP110A PNP Epitaxial Silicon Transistor MEDIUM PO W ER LINEAR SW ITCHING APPLICATIONS • C ollector cu rren t 10A • Collector dissip atio n Pc =75W Tc = 25 <c 1 [ABSOLUTE MAXIMUM RATINGS (Ta = 2 5 X. \ Sym bol R atin g XJnit Collector-Base V oltage
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TIP110A
O-220
-10EMITTER
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FT324
Abstract: FT424 75W HI FI AMPLIFIER 75W NPN AUDIO FT317 tl 464 SOA 2N5401 matching transformer P A speaker 2N5830 1AAA1
Text: APPLICATIO N NOTE 336 • LINEAR 5flE D bSDllS4 007Tb33 ATI INSC 2 75W Hl FI AUDIO AMPLIFIER WITH LOW TRANSIENT INTERMODULATION DISTORTION Hans Palouda Until very recently, the trend in hi-fi audio am p lifie rs has been tow ards lo w er harm on ic and in te rm od ula tion disto rtion num bers.
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TIP127A
Abstract: No abstract text available
Text: TIP127A PNP Epitaxial Silicon Transistor ISemiconductor M E D IU M P O W E R L IN E A R S W IT C H IN G A P P L IC A T IO N S • Collector current 10A • Collector dissipation Pc =75W Tc = 25 “c (ABSO LU TE M A X IM U M R A T IN G S tT a = 2 5 *C> 1
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TIP127A
-10mA,
-50mA
-40mA
-20mA
-10mA
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IRF9210
Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF
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2N3904
2N3906
2N4401
2N4403
2N5087
2N5088
2N5551
2N6515
KSP06
KSP10
IRF9210
darlington NPN 600V 8a transistor
fet 10a 600v
darlington NPN 600V 12a transistor
transistor IRF9640
N-CH POWER MOSFET TO-92
600v 12A TO220F
NPN Transistor 600V 5A TO-220
transistor irf620
KSH117-1
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transistor d 140 g
Abstract: SM-8 BIPOLAR TRANSISTOR transistor PNP 5 w 75W npn F75w
Text: Section S: Bipolar Transistors D a rlin g to n T r a n s is to r s C om binations P0 _:? W l ZDT6702 ZDT6705 Polarity V CEO VCBO NPN V 60 V 80 PNP -60 -80 ICM •c 2.0 A 4 VcEtsat Max mV 1200 -2.0 -4 -1200 A h FE 2.0 at Ib mA 2 -2.0 -2 a Type fi) > 1 S M -8 N P N /P N P D sriington T
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ZDT6702
ZDT6705
ZDT605
ZDT705
transistor d 140 g
SM-8 BIPOLAR TRANSISTOR
transistor PNP 5 w
75W npn
F75w
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Untitled
Abstract: No abstract text available
Text: m TIP127A PNP Epitaxial Silicon Transistor Semiconductor MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Collector current 10A • Collector dissipation Pc “75W Tc = 25 'c [ABSOLUTE MAXIMUM RATINGS <Ta = 25 -C1 1 Symbol Rating Unit Collector-Base Voltage
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TIP127A
-600mA
0DD1314
TIPI27A
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2N5508
Abstract: 2N1019 l53b 5 2N4241 BC138 2SJ11 Transistors 2n551 2N3523 2N550 2N551
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
12X084B
12X165
VCEO-15V
hFE-30
ICBO-200mA
PA-300mW;
VCEO-55V;
hFE-100
Pt-25W;
2N5508
2N1019
l53b 5
2N4241
BC138
2SJ11
Transistors 2n551
2N3523
2N550
2N551
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