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    2N551 Price and Stock

    RAF Electronic Hardware M3042-N-5.5-1.5-3.2

    METRIC SHOULDER WASHERPLAIN NYLO
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    RAF Electronic Hardware M3042-N-5.5-10.0-3.2

    METRIC SHOULDER WASHERPLAIN NYLO
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    Torex Semiconductor LTD XC6902N551MR-G

    LDO Voltage Regulators
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    Mouser Electronics XC6902N551MR-G
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    Vishay Siliconix 2N5516

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    Bristol Electronics 2N5516 79
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    Walbern Devices Inc 2N5515

    SMALL SIGNAL FIELD-EFFECT TRANSISTOR, N-CHANNEL, JUNCTION FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5515 71
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    2N551 Datasheets (144)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N551 Central Semiconductor Various Transistors Scan PDF
    2N551 Central Semiconductor Transistor Selection Guide Scan PDF
    2N551 General Diode Transistor Selection Guide Scan PDF
    2N551 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N551 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N551 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N551 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N551 Unknown GE Transistor Specifications Scan PDF
    2N551 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N551 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N551 Unknown Vintage Transistor Datasheets Scan PDF
    2N551 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N551 Semitronics Silicon Power Transistors Scan PDF
    2N5510 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5510 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5510 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5510 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N5510 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5510 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5510 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    ...

    2N551 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Transistors 2n551

    Abstract: 2N551
    Text: 2N551 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N551 Availability Online Store Diodes


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    PDF 2N551 2N551 STV3208 LM3909N LM3909 Transistors 2n551

    u233

    Abstract: 2N5454 UC2138 2N3457 2N5906 2N5908 2N6483 2N5515 uc2147 2N3954
    Text: Type Case Geometry Number Style 2N3921 2N3922 2N3954 2N3954A 2N3955 2N3955A 2N3956 2N3457 2N3958 2N4082 2N4083 2N4084 2N4085 2N5045 2N5046 2N5047 2N5196 2N5197 2N5198 2N5199 2N5452 2N5453 2N5454 2N5515 2N5516 2N5517 2N5518 2N5519 2N5520 2N5521 2N5522 TO71


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    PDF 2N3921 2N3922 2N3954 2N3954A 2N3955 2N3955A 2N3956 2N3457 2N3958 2N4082 u233 2N5454 UC2138 2N3457 2N5906 2N5908 2N6483 2N5515 uc2147 2N3954

    e270 siliconix

    Abstract: 2N3379 2N2844 InterFET MPF2609
    Text: JUNCTION FET Item Number Part Number Manufacturer g. V BR GSS IDSS (V) (A) Min (S) Max 2.0m 2.2m 2.5m 4.5m 4.5m 4.5m 4.5m 4.5m 4.5m 5.0m 5.0m 5.0m 5.0m 5m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 6.0m 6.0m 6.0m 6.0m 6.0m 6.0m 1.4m 1.5m 1.0m


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    PDF 2N2844 UC420 MPF2608 SMP2608 TMPF2608 TP2608 2N2608 PN5019 Pl087 e270 siliconix 2N3379 InterFET MPF2609

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    2N5518

    Abstract: 2N551 2N5521 2N5515 2N5516 2N5517 2N5519 2N5520 2N5515-2N5524 200fia
    Text: □1 G E SOLI» STATE DE I 3Û7SGÛ1 D011D04 T " — 2* f — iL y «• N IO K> z « I m 2N5515-2N5524 Dual N-Channel JF E T Low Noise Amplifier ABSOLUTE MAXIMUM RATINGS n FEATURES IO • Tight Temperature Tracking M • Tight Matching Ta = 25°C unless otherwise specified


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    PDF 2N5515-2N5524 D011D04 6037-2N5515-19 6019-2N5520-24 10sec) 250mW 375mW 200HA 2N5518 2N551 2N5521 2N5515 2N5516 2N5517 2N5519 2N5520 2N5515-2N5524 200fia

    Untitled

    Abstract: No abstract text available
    Text: 2N5515 -2N5524 CA L O GI C CORP MÌE D • 1 8 M M 3 S 5 0 0 00 33 5 T M C 6 C Dual N-Channel JFET Low Noise Amplifier caloric CORPORATION V 2N5515-2N5524 A B S O L U T E M A X IM U M R A T IN G S T a = 2 5 °C unless otherwise specified FE A T U R E S •


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    PDF 2N5515 -2N5524 2N5515-2N5524 200nA, 200jiA 2NS515-2N5524

    2N5515

    Abstract: 2N5516 2N5517 2N5518 2N5519 X2N5518 X2N5519
    Text: 2N5515-2N5524 CALOGIC CORP 4BE D m 184M325 [J00D335 T m CGC Dual N-Channel JFET Low Noise Amplifier - T 'Z l - Z l 2N5515-2N5524 ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise specified FEATURES • • • • Tight Temperature Tracking Tight Matching


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    PDF 2N5515-2N5524 2N5515-19 2N5520-24 10sec) 250mW 375mW 200nA, 200yA, 200jiA 200nA 2N5515 2N5516 2N5517 2N5518 2N5519 X2N5518 X2N5519

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    U22 2.5A 250V

    Abstract: P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


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    PDF NPN110. THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 U22 2.5A 250V P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644

    TIL78

    Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    2N551S

    Abstract: 2N5516 2N5515 2N5515-19 2N5517 2n5520 2N5522 2N5521
    Text: 2 N 5 5 1 5 -2 N 5 5 2 4 M o n o lithic Dual N -C h an n el JF E T ABSOLUTE MAXIMUM RATINGS Mote 1 PIN CONFIGURATION @25° C (unless otherwise noted) Maxim um Temperatures Storage Temperature Maxim um Power Dissipation Device Dissipation @ Free A ir Temperature


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    PDF 2N5515-2N5524 2N5520-24) 2N5515- 200ua VGS21 Id-200 -200jja 20Log10aVDD/ilVGS, 2N551S 2N5516 2N5515 2N5515-19 2N5517 2n5520 2N5522 2N5521

    P1027

    Abstract: 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF NPN110. FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V P1027 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B

    2N5116

    Abstract: JANTX2N5114 2N5115 2N5114 JANTX2N5116 T018 2N5114-16
    Text: DMÜ^DL 2 N 5 1 1 4 -2 N 5 1 16 JAN, JTX P-Channel JFET FEATURES PIN CONFIGURATION • ON Resistance < 75 ohms 2N5114 • • 'D (o ff) < 5 0 0 pA Switches d ire c tly fro m T ^ L Logic (2 N 5 116) 1 TO-18 GENERAL DESCRIPTION Ideal fo r inverting switching or "V irtu a l G n d " switching


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    PDF 2N5114-2N5116 2N5114) 2N5116) 2N5116 JANTX2N5114 2N5115 2N5114 JANTX2N5116 T018 2N5114-16

    2n1478

    Abstract: 2N2204 2N3916 2N1899 2N2202 2N4244 2N1018 2N2951 to-53 2N1886
    Text: jo m itr o n ic r discrete devices s e m ic o n d u c t o r s S em itronics Corp. silicon transistors cont'd silicon power transistors Power Dissipation @ 2 5°C W atts h FE @ lc BVc e (volts) (°C ) BVcbo (volts) fC) |A) (Cl (Al (C) 150 200 150 200 150


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    PDF 2N338 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A 2n1478 2N2204 2N3916 2N1899 2N2202 2N4244 2N1018 2N2951 to-53 2N1886

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    2N5521

    Abstract: 2N5562 2N5563
    Text: [PMEHUKgTT ÄTTÄ[L LO W P O W E R FIELD EFFECT T R A N S IS T O R S Case Style Typ« Number (TO - Geometry BVgss Min (V) Ciss Max (pF) Vgss(off) Min Max (V) Idss Yfs Min Max (mA) Min Max (UMhos) 2N3921 2N3922 2N3954 2N3954A 2N3955 71 71 71 71 71 FN3.6


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    PDF 2N3921 2N3922 2N3954 2N3954A 2N3955 2N3955A 2N3956 2N3957 2N3958 2N4082 2N5521 2N5562 2N5563

    K1502

    Abstract: l61c BFX82 K1501 2N4088 2N3113 RN1030 2N3379 RN1030A l53b 5
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. I I MIN. M A X Pc T 6 T T IDER A TE F R E E I'A E I J to C


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    PDF NPN110. R038q UC300 UC305 UC310 UC315 UC320 UC325 UC330 UC335 K1502 l61c BFX82 K1501 2N4088 2N3113 RN1030 2N3379 RN1030A l53b 5

    2N5515

    Abstract: 2N5516 2N5517 2N5518 2N5519 J230-18 Siliconix Dual N-Channel JFETs
    Text: H S ilic o n ix Performance Curves NS See Section 5 B E N E F IT S Ultra-Low Noise "en = 8 nV/v/Hz at 10 Hz Typical ~en = 2 n V A /H z at 1 kHz (Typical) • Differential Am plifiers TO-71 See Section 7 ♦ A B S O L U T E M AXIM UM R A T IN G S (25°C)


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    transistor k1502

    Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V transistor k1502 dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029

    BC138 TRANSISTOR

    Abstract: 2N4043 ME2001 2N1020 2N3523 2N4042 2N4241 BC138 bc143 TLO 61
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


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    PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    2N3958

    Abstract: 2N3921 2N3922 2N3954 2N3954A 2N3955 2N3955A 2N3956 2N3957 2N4082
    Text: ^ [Q [U] ¥ ©ÄTTÄ[L® L O W P O W E R FIE LD EFFEC T T R A N S IS T O R S ®tym KHgMflKML Type Number Case Style (T O -) Geometry EVgss Min (V) Ciss Max (PF) Vgss(off) Min Max (V) Idss Yfs Min Max (mA) Min Max (UMhos) 0.2 0.2 1.0 1.0 1.0 1.0 1.0 0.5


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    PDF 2N3921 2N3922 2N3954 2N3954A 2N3955 2N3955A SDF506 SDF507 SDF508 SDF509 2N3958 2N3956 2N3957 2N4082

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680