OLD123
Abstract: Infrared Emitting Diode OLP123 1000 nm light emitting diode
Text: O K I electronic components OLP123_ GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD123 is a high-output GaAs infrared light emission diode sealed with a flat glass in a TO-18 metal case. Its light emission wave peaks at 940 nm. Beause of its sharp directivity, multiple units
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OLP123_
OLD123
940nm
OLD123
b7S4240
Ifm/100
242H0
Infrared Emitting Diode
OLP123
1000 nm light emitting diode
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ECHO canceller IC
Abstract: sft 43 MSM7543 MSM7602-001GS-K MSM7620 MSM7620-001GS-K MSM7620-011GS-BK
Text: O K I Semiconductor MSM7620 Echo Canceller GENERAL DESCRIPTION The MSM7620 is an im proved version of the MSM7520 w ith the sam e basic configuration. The MSM7620 includes follow ing im provements: a m odified through m ode, tim ing control of the control pin input, and a thinner package. The MSM7620 also provides a pin-for-pin replacement
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MSM7620
MSM7620
MSM7520
MSM7520.
ECHO canceller IC
sft 43
MSM7543
MSM7602-001GS-K
MSM7620-001GS-K
MSM7620-011GS-BK
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Piezo sounder
Abstract: TONE/VOLUME CONTROL CIRCUIT MSM6895 MSM7502 MSM7502GS-BK MSM7543 RM01
Text: O K I Semiconductor MSM7502 Multi-Function PCM CODEC G E N E R A L D E S C R IP T IO N The M SM 7502, developed especially for low -pow er and m ulti-function applications in touch tone telephone sets and digital telephone term inals o f digital PBXs, is a single +5 V pow er supply
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MSM7502_
MSM7502,
MSM7543
MSM7502
Piezo sounder
TONE/VOLUME CONTROL CIRCUIT
MSM6895
MSM7502GS-BK
RM01
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MSM511665-10
Abstract: MSM511665-80
Text: 5ÔE D O K I m b754240 0012^40 SEMICONDUCTOR 3^7 « O K I J GROUP O K I sem iconductor M SM 511665 z^s-H 65,536-W O R D x 16-BIT DYN A M IC RAM GENERAL DESCRIPTION The M SM511665 is a new generation dynamic RAM organized as 65,536 words x 16 bits. The technology used to fabricate the MSM511665 is OKI's CMOS silicon gate process technology.
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b724240
MSM511665
536-WORD
16-BIT
MSM511665
W15/I015
Lj7BM240
MSM511665'
VOH-W15/1015
MSM511665-10
MSM511665-80
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ms1250
Abstract: SUNNY MSM6650 eprom 6653 ln 258 oki voice synthesizer msm6375 Sunny Oscillators MSM6653 MSM6656-XXX 10FFE
Text: O K I Semiconductor MSM6652-XXX/MSM6653-XXX/ MSM6654-XXX/MSM6655-XXX/ MSM6656-XXX_ Internal MASK ROM Speech Synthesis LSI G E N E R A L D E S C R IP T IO N The MSM6650 family is a successor to the MSM6375 family that are speech synthesis LSIs w ith
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MSM6652-XXX/MSM6653-XXX/
MSM6654-XXX/MSM6655-XXX/
MSM6656-XXX_
MSM6650
MSM6375
12bit
-40dB
00MSA/MSK/
00MHz,
AR76-202
ms1250
SUNNY
eprom 6653
ln 258
oki voice synthesizer msm6375
Sunny Oscillators
MSM6653
MSM6656-XXX
10FFE
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM65514/65P514 Oki Original High Perform ance C M O S 8-Bit M icrocontroller GENERAL DESCRIPTION The MSM65514 is a high-performance 8-bit microcontroller that employs Oki's original nX-8/50 CPU core. With a minimum instruction execution time of 400 ns 10MHz clock , the MSM65514 is
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MSM65514/65P514
MSM65514
nX-8/50
10MHz
MSM65P514,
DD23bGb
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514100A
Abstract: No abstract text available
Text: O K I Semiconductor IC MSM6691 DRAM INTERFACE LSI Description Features DRAMs can be used for voice storage by connecting the MSM6691 with Oki's integrateR /W Read/Write LSIs, theMSM6388, andtheMSM6588. TheMSM6691 translates the signals associated with the dedicated
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MSM6691
MSM6691
theMSM6388,
andtheMSM6588.
TheMSM6691
MSM6388
MSM6588
16-bit
1100A
11001A)
514100A
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MSM514260
Abstract: SM5142
Text: • O K I S em iconductor MSM5 14 2 6 0 B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM514260B/BSL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514260B /BSL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. ITie MSM514260B/BSL is
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MSM514260B/BSL
144-Word
16-Bit
MSM514260B/BSL
40-pin
MSM514260BSL
MSM514260
SM5142
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor M S M 6652-X X X /M S M 6653-X X X / M S M 6654-X X X /M S M 6655-X X X / M SM 6656-XXX_ Internal MASK ROM Speech Synthesis LSI GENERAL DESCRIPTION The M SM 6650 fam ily is a su ccesso r to the M SM 6375 fam ily that are speech synthesis LSIs w ith
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6652-X
6653-X
6654-X
6655-X
6656-XXX_
12bit
09MGU
09MGWU
2424D
MSM6652/6653/6654/6655/6656
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4424 ym
Abstract: oki voice synthesizer msm6375 tba 2929 07FFD 20191 MSM505 MSM6376 KF-38S4 MSM6374-006 MSM6373-329
Text: O K I Semiconductor M S M 6375/4/3/2-X X X 1 M -b it/5 1 2 K -b it/2 5 6 K -b it/1 2 8 K -b it M A S K R O M SPEECH SY N TH E S IZ E R G ENER AL D ES C R IP TIO N T he M SM 6375 series is a n A D PC M speech sy n th esis LSI u tilizin g a C M O S sp eech p ro
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MSM6375/4/3/2-XXX
1M-bit/512K-bit/256K-bit/128K-bit
MSM6375
12-bit
MSM6376
MSM637X
b7E42m:
001b310
4424 ym
oki voice synthesizer msm6375
tba 2929
07FFD
20191
MSM505
KF-38S4
MSM6374-006
MSM6373-329
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TSCC 1100
Abstract: SI03
Text: 5ôE D • b 7 2 4 2 4 D □ 0 1 3 4 7 b =12a « O K I J O K I O K I s e m i c o n d S E M I C O N D U C T O R GR OU P u c t o r - r ^ - ¿ 3 - 1 ? M S M 5 1 4 2 5 2 262,144-Word x 4-Bit MULTIPORT DYNAMIC RAM <Fast Page Mode» <Fast Page Mode> DESCRIPTION
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b75424o
001347b
MSM514252
144-Word
MSM514252
TSCC 1100
SI03
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oki msl
Abstract: MSL915 SL915R
Text: -LOKI « K I SEMICONDUCTOR GROUP bfl t ' DE;|b724240 O O O l b M 4 r'~M2ÏÏÎoT S E M K O N D t iC T O R 650 North Mary Ave., Sunnyvale,’ CA 94086 Tel 408 720-1900 OKI SEMICONDUCTOR IN T EG R A T ED C IR C U IT CA TA LO G (PROVISIONAL) F L U O R E S C E N T D ISPLA Y TU B E D R IV E R
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b724240
SL915R
18-pin
MSL915R
7242M0
T-52-13
oki msl
MSL915
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM6948/6948V 1200 bps Single Chip MSK Modem GENERAL DESCRIPTION The M SM 6948 is a single chip M SK M inim um Shift Keying m odem w hich is fabricated by O ki's low power consum ption C M O S silicon gate technology. The dem odulator receives the data to be transmitted (SD) synchronized with the transmit timing
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MSM6948/6948V
Q2224Q
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cro circuit diagram
Abstract: MSM7582 MSM7582B
Text: O K I Semiconductor MSM75 8 2 /75 8 2 B ji/ 4 Shift QPSK MODEM GENERAL DESCRIPTION The M S M 7582/7582B are CMOS ICs for the j t/4 shift QPSK m odem developed for the digital cordless telephone systems. The devices are designed for Personal and Cell station applications, the MSM7582B is the
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MSM7582
MSM7582B
7582/7582B
MSM7582B
7582B
L72424D
cro circuit diagram
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and/LT 7542
Abstract: No abstract text available
Text: O K I Semiconductor MSM7541 / MSM7542 3V Single-Rail PCM C O D E C s DESCRIPTION The M SM 7541 and MSM 7542 are single-rail, low-voltage, single-channel PCM CODECs w hich perform voice digitization using presam pling and reconstruction filters for transm it and receive operations in
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MSM7541
MSM7542
MSM7541
b7PM24D
and/LT 7542
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T040W
Abstract: SE1405
Text: O K I Semiconductor M SM7707 Baseband integration LSI device for PHS GENERAL DESCRIPTION The MSM7707 is an LSI device with an ADPCM CODEC function, jt/4 shift QPSK modulation/ demodulation function and a TDMA-TDD function required for PHS Personal Handy phone
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SM7707
MSM7707
32kbps)
b724240
0D2574A
b7E454D
0024bEfi
T040W
SE1405
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Untitled
Abstract: No abstract text available
Text: O K I Sem iconductor MSM5 116800 _ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116800 is a 2,097,152-w ord x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116800 achieves high integration, high-speed operation, and low-power
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MSM5116800_
152-Word
MSM5116800
28-pin
cycles/64
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524,288 9bit
Abstract: No abstract text available
Text: % O K I Semiconductor MSM514900 /SL 524,288-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514900/SL is a new generation dynam ic RA M organized a s 524,288-word x 9-bit. The technology u sed to fabricate the M SM 514900/SL is O KI's C M O S silicon gate process technology.
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MSM514900/SL
288-Word
MSM514900/SL
524288-word
cycles/16ms,
cycles/28ms
b72M24D
524,288 9bit
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM514265B/BSL_ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM514265B/BSL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514265B/BSL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514265B/BSL is
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MSM514265B/BSL_
144-Word
16-Bit
MSM514265B/BSL
40-pin
MSM514265BSL
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5116165 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FA S T P A G E M O D E T Y P E WITH ED O DESCRIPTION The MSM5116165A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116165A achieves high integration, high-speed operation, and low-power
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MSM5116165
576-Word
16-Bit
MSM5116165A
42-pin
50/44-pin
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Untitled
Abstract: No abstract text available
Text: O K I electronic components OLD232 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD232 is a high-output GaAIAs infrared light emission mini-diode sealed with a glass lens in a highly reliable metal can on a TO-46 type stem . Its light emission wave peaks at 910 nra.
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OLD232
OLD232
b72M240
b724240
7242M0
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Rxl1
Abstract: MSM7557 MSM7557GS-2K 9336H QD22
Text: O K I Semiconductor MSM7557_ Single Chip M S K M o dem w ith C o m p an d or fo r Cordless Telephone GENERAL DESCRIPTION The MSM7557 is a single chip M SK m odem with base band voice processor for cordless telephone. The MSM7557 voice transmit block consists of high p ass filter, compressor, pre-emphasis, limiter
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MSM7557_
MSM7557
z/3400
z/3500
MSM7557
7242MQ
B724BHQ
Rxl1
MSM7557GS-2K
9336H
QD22
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intel 83c154 INSTRUCTION SET
Abstract: 83C154 instruction MSM80C154RS msm80c154 t3d 9d Z17H MSM80C154V MSM83C154-XXJS tfo 5v mov DIP40-P-600 OKI
Text: OKI semiconductor MSM80C15 4 / MSM83C154 CMOS 8-bit One-Chip Microcontroller G E N E R A L D E S C R IP TIO N The MSM83C1 54/MSM80C1 54 is a high perform ance 8-b it one-chip m icro co n tro lle r im plem enting large inte gratio n, high speed and lo w power consum ption b y 2 n m silicon gate CMOS process technology
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MSM80C154/
MSM83C154
MSM83C1
54/MSM80C1
MSM83C154
16-bit
MSM80C1
0D23734
intel 83c154 INSTRUCTION SET
83C154 instruction
MSM80C154RS
msm80c154
t3d 9d
Z17H
MSM80C154V
MSM83C154-XXJS
tfo 5v mov
DIP40-P-600 OKI
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MSM51V16400
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V16400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400 is a n e w generation dynam ic organized as 4,194,304-w o rd x 4-bit. The technology used to fabricate the MSM51V16400 is O K I's C M O S silicon gate process technology.
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MSM51V16400
304-Word
MSM51V16400
cycles/64ms
2424D
b724240
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